DYNEX DCR3030V40

DCR3030V42
Phase Control Thyristor
Preliminary Information
DS5810-1.4 September 2009 (LN26859)
FEATURES
KEY PARAMETERS

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
APPLICATIONS
4200V
3030A
40600A
1500V/µs
400A/µs
* Higher dV/dt selections available

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
DCR3030V42
DCR3030V40
DCR3030V35
DCR3030V30
4200
4000
3500
3000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 200mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR3030V42
Outline type code: V
(See Package Details for further information)
Fig. 1 Package outline
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR3030V42
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
3030
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4760
A
Continuous (direct) on-state current
-
4550
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
40.6
kA
VR = 0
8.24
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.00746
°C/W
Single side cooled
Anode DC
-
0.0130
°C/W
Cathode DC
-
0.0178
°C/W
Double side
-
0.002
°C/W
-
0.004
°C/W
-
125
°C
Clamping force 54kN
(with mounting compound)
(blocking)
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
48.0
59.0
kN
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DCR3030V42
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
200
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
200
A/µs
Gate source 30V, 10,
Non-repetitive
-
400
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
200A to 1700A at Tcase = 125°C
-
0.82
V
Threshold voltage – High level
1700A to 7000A at Tcase = 125°C
-
0.98
V
On-state slope resistance – Low level
200A to 1700A at Tcase = 125°C
-
0.292
m
On-state slope resistance – High level
1700A to 7000A at Tcase = 125°C
-
0.198
m
TBD
TBD
µs
250
500
µs
1600
3500
µC
Delay time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
Tj = 125°C, dI/dt – 1A/µs, VR pk =3000V,
VRM= 1700V
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR3030V42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
1.5
V
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
VGD
Gate non-trigger voltage
At VDRM, Tcase = 125°C
TBD
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
250
mA
IGD
Gate non-trigger current
VDRM = 5V, Tcase = 25°C
TBD
mA
CURVES
Instantaneous on-state currentTI - (A)
7000
min 125°C
max 125°C
25°C
max 25°C
6000
5000
4000
3000
2000
1000
0
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage V T - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.866995
B = -0.042053
C = 0.000100
D = 0.014062
these values are valid for Tj = 125°C for IT 500A to 10000A
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DCR3030V42
SEMICONDUCTOR
16
130
Mean power dissipation - (kW)
o
14
Maximum case temperature, T case ( C )
180
120
90
60
30
12
10
8
6
4
2
180
120
90
60
30
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0
1000
2000
3000
4000
0
5000
1000
2000
3000
4000
5000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
180
120
90
60
30
120
110
12
11
100
Mean power dissipation - (kW)
o
Maximum heatsink temperature, THeatsink - ( C)
130
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
d.c.
180
120
90
60
30
3
2
1
10
0
0
0
1000
2000
3000
4000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
1000
2000
3000
4000
5000
6000
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
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DCR3030V42
130
130
d.c.
180
110
90
90
60
80
30
180
110
120
100
d.c.
120
o
120
Maximum heatsik temperature hTeatsink - ( C)
T - (°C)
Maximum permissible case temperature ,case
SEMICONDUCTOR
70
60
50
40
30
20
10
0
120
100
90
90
60
80
30
70
60
50
40
30
20
10
0
0
2000
4000
6000
8000
0
Mean on-state current, IT(AV) - (A)
1000
2000
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Double side cooled
18
Anode side cooled
Thermal Impedance , Zth(j-c) - ( °C/kW)
6000
Cathode side cooled
2
1.8299
3
3.4022
4
1.3044
0.0076807
0.0579454
0.4078613
1.2085
0.9032
1.6719
3.0101
7.4269
0.0075871
0.0536531
0.3144537
5.624
0.9478
2.0661
1.6884
13.0847
0.0078442
0.0645541
0.3894389
4.1447
Ri (°C/kW)
Ti (s)
Double Side
Cooling
Anode Side
Cooling
Cathode
Sided Cooling
12
5000
1
0.9206
Ri (°C/kW)
Ti (s)
14
4000
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
20
16
3000
Mean on-state current, IT(AV) - (A)
Ri (°C/kW)
Ti (s)
Zth =  [Ri x ( 1-exp. (t/ti))]
[1]
Rth(j-c) Conduction
10
Tables show the increments of thermal resistance R th(j-c) when the device
operates at conduction angles other than d.c.
8
Double side cooling
Zth (z)
6
°
180
120
90
60
30
15
4
2
0
0.001
0.01
0.1
1
10
sine.
1.34
1.57
1.83
2.08
2.27
2.36
rect.
0.88
1.30
1.54
1.81
2.11
2.28
Anode Side Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
1.34
1.57
1.84
2.08
2.28
2.37
rect.
0.88
1.30
1.54
1.81
2.11
2.28
Cathode Sided Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
1.33
1.57
1.83
2.07
2.26
2.35
rect.
0.88
1.29
1.53
1.80
2.10
2.26
100
Time ( s )
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR3030V42
SEMICONDUCTOR
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
600
18000
QSmax =
16000
3397.4*(di/dt)0.5061
Stored Charge, QS - (uC)
Reverse recovery current, IRR - (A)
500
14000
QSmin =
1357.3*(di/dt)
12000
0.6271
IRRmax =
48.236*(di/dt)0.7553
400
10000
IRRmin
300
8000
6000
Conditions:
Tj = 125oC
VRpeak ~ 2500V
VRM ~ 1700V
snubber as appropriate to
control reverse voltages.
4000
2000
29.853*(di/dt)0.8222
200
Conditions:
o
Tj=125 C
VRpeak ~ 2500V
VRM ~ 1700V
snubber as approriate to control
reverse voltages
100
0
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
30
=
0
0
5
10
15
20
25
30
Rate of decay of on-state current, di/dt - (A/us)
Fig. 12 Stored Charge
Fig. 13 Reverse Recovery Current
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DCR3030V42
SEMICONDUCTOR
Pulse
Width us
100
200
500
1000
10000
Pulse Power PGM (Watts)
Frequency Hz
50
100
150
150
150
150
150
150
150
100
20
-
400
150
125
100
25
-
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR3030V42
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Ø110.0 MAX.
Ø73.0 NOM.
Ø1.5
CATHODE
Device
DCR1474SV18
DCR1475SV28
DCR1476SV42
DCR1478SV48
DCR1574SV28
DCR1575SV42
DCR1576SV52
DCR4060V22
DCR3780V28
DCR3030V42
DCR2720V52
DCR2290V65
DCR1910V85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
27.265
26.515
27.34
26.59
27.57
26.82
27.69
26.94
27.34
26.59
27.57
26.82
27.69
26.94
27.265
26.515
27.34
26.59
27.57
26.82
27.69
26.94
27.95
27.2
28.31
27.56
GATE
ANODE
Ø73.0 NOM.
FOR PACKAGE HEIGHT
SEE TABLE
NOMINAL WEIGHT 1160g
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: V
Fig.16Package outline
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DCR3030V42
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee exp ress or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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