DCR3030V42 Phase Control Thyristor Preliminary Information DS5810-1.4 September 2009 (LN26859) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 3030A 40600A 1500V/µs 400A/µs * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR3030V42 DCR3030V40 DCR3030V35 DCR3030V30 4200 4000 3500 3000 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3030V42 Outline type code: V (See Package Details for further information) Fig. 1 Package outline Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 3030 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 4760 A Continuous (direct) on-state current - 4550 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 40.6 kA VR = 0 8.24 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.00746 °C/W Single side cooled Anode DC - 0.0130 °C/W Cathode DC - 0.0178 °C/W Double side - 0.002 °C/W - 0.004 °C/W - 125 °C Clamping force 54kN (with mounting compound) (blocking) Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 48.0 59.0 kN 2/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 200 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 200 A/µs Gate source 30V, 10, Non-repetitive - 400 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 200A to 1700A at Tcase = 125°C - 0.82 V Threshold voltage – High level 1700A to 7000A at Tcase = 125°C - 0.98 V On-state slope resistance – Low level 200A to 1700A at Tcase = 125°C - 0.292 m On-state slope resistance – High level 1700A to 7000A at Tcase = 125°C - 0.198 m TBD TBD µs 250 500 µs 1600 3500 µC Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge Tj = 125°C, dI/dt – 1A/µs, VR pk =3000V, VRM= 1700V IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units 1.5 V VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA CURVES Instantaneous on-state currentTI - (A) 7000 min 125°C max 125°C 25°C max 25°C 6000 5000 4000 3000 2000 1000 0 0.5 1.0 1.5 2.0 2.5 Instantaneous on-state voltage V T - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.866995 B = -0.042053 C = 0.000100 D = 0.014062 these values are valid for Tj = 125°C for IT 500A to 10000A 4/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR 16 130 Mean power dissipation - (kW) o 14 Maximum case temperature, T case ( C ) 180 120 90 60 30 12 10 8 6 4 2 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 10 0 0 0 1000 2000 3000 4000 0 5000 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 180 120 90 60 30 120 110 12 11 100 Mean power dissipation - (kW) o Maximum heatsink temperature, THeatsink - ( C) 130 90 80 70 60 50 40 30 20 10 9 8 7 6 5 4 d.c. 180 120 90 60 30 3 2 1 10 0 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR3030V42 130 130 d.c. 180 110 90 90 60 80 30 180 110 120 100 d.c. 120 o 120 Maximum heatsik temperature hTeatsink - ( C) T - (°C) Maximum permissible case temperature ,case SEMICONDUCTOR 70 60 50 40 30 20 10 0 120 100 90 90 60 80 30 70 60 50 40 30 20 10 0 0 2000 4000 6000 8000 0 Mean on-state current, IT(AV) - (A) 1000 2000 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Double side cooled 18 Anode side cooled Thermal Impedance , Zth(j-c) - ( °C/kW) 6000 Cathode side cooled 2 1.8299 3 3.4022 4 1.3044 0.0076807 0.0579454 0.4078613 1.2085 0.9032 1.6719 3.0101 7.4269 0.0075871 0.0536531 0.3144537 5.624 0.9478 2.0661 1.6884 13.0847 0.0078442 0.0645541 0.3894389 4.1447 Ri (°C/kW) Ti (s) Double Side Cooling Anode Side Cooling Cathode Sided Cooling 12 5000 1 0.9206 Ri (°C/kW) Ti (s) 14 4000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 20 16 3000 Mean on-state current, IT(AV) - (A) Ri (°C/kW) Ti (s) Zth = [Ri x ( 1-exp. (t/ti))] [1] Rth(j-c) Conduction 10 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 8 Double side cooling Zth (z) 6 ° 180 120 90 60 30 15 4 2 0 0.001 0.01 0.1 1 10 sine. 1.34 1.57 1.83 2.08 2.27 2.36 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Anode Side Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.34 1.57 1.84 2.08 2.28 2.37 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.33 1.57 1.83 2.07 2.26 2.35 rect. 0.88 1.29 1.53 1.80 2.10 2.26 100 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 600 18000 QSmax = 16000 3397.4*(di/dt)0.5061 Stored Charge, QS - (uC) Reverse recovery current, IRR - (A) 500 14000 QSmin = 1357.3*(di/dt) 12000 0.6271 IRRmax = 48.236*(di/dt)0.7553 400 10000 IRRmin 300 8000 6000 Conditions: Tj = 125oC VRpeak ~ 2500V VRM ~ 1700V snubber as appropriate to control reverse voltages. 4000 2000 29.853*(di/dt)0.8222 200 Conditions: o Tj=125 C VRpeak ~ 2500V VRM ~ 1700V snubber as approriate to control reverse voltages 100 0 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) 30 = 0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us) Fig. 12 Stored Charge Fig. 13 Reverse Recovery Current 7/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR Pulse Width us 100 200 500 1000 10000 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Ø110.0 MAX. Ø73.0 NOM. Ø1.5 CATHODE Device DCR1474SV18 DCR1475SV28 DCR1476SV42 DCR1478SV48 DCR1574SV28 DCR1575SV42 DCR1576SV52 DCR4060V22 DCR3780V28 DCR3030V42 DCR2720V52 DCR2290V65 DCR1910V85 Maximum Minimum Thickness Thickness (mm) (mm) 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.34 26.59 27.57 26.82 27.69 26.94 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.95 27.2 28.31 27.56 GATE ANODE Ø73.0 NOM. FOR PACKAGE HEIGHT SEE TABLE NOMINAL WEIGHT 1160g Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.16Package outline 9/10 www.dynexsemi.com DCR3030V42 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee exp ress or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com