DCR3990A52 Phase Control Thyristor Preliminary Information DS5940-1.0 March 2009 (LN 26623) KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 3990A 53400A 2000V/µs 400A/µs * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR3990A52* DCR3990A50 DCR3990A45 Repetitive Peak Voltages VDRM and VRRM V 5200 5000 4500 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. o o *5000V @ -40 C, 5200V @ 0 C Outline type code: A (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3990A52 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Parameter Symbol Test Conditions Max. Units 3990 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 6270 A Continuous (direct) on-state current - 5640 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 53.4 kA VR = 0 14.25 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.00603 °C/W Single side cooled Anode DC - 0.01024 °C/W Cathode DC - 0.01467 °C/W Clamping force 83.0kN Double side - 0.001 °C/W (with mounting compound) Single side - 0.002 °C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 74.0 91.0 kN 2/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 2000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 400 A/µs Gate source 30V, 10, Non-repetitive - 1000 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 1000 to 2600A at Tcase = 125°C - 0.85 V Threshold voltage – High level 2600 to 9000A at Tcase = 125°C - 0.99 V On-state slope resistance – Low level 1000 to 2600A at Tcase = 125°C - 0.2115 m On-state slope resistance – High level 2600 to 9000A at Tcase = 125°C - 0.1578 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 750 µs 4030 5420 µC 49 59 A Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 3000A, Tj = 125°C, dI/dt – 1A/µs, VRpeak ~3100V, VR ~ 2100V IRR Reverse recovery current IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 300 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES 9000 min @ 125ºC max @ 125ºC max @ 25ºC min @ 25ºC Instantaneous on-staate current, I T - (A) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 0.5 1 1.5 2 2.5 Instantaneous on-state voltage , VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.061592 B = 0.115333 C = 0.000119 D = 0.002394 these values are valid for Tj = 125°C for IT 250A to 9000A 4/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR 130 12 180 120 90 60 30 ( oC ) case 8 Maximum case temperature, T Mean power dissipation - (kW) 10 180 120 90 60 30 120 6 4 2 110 100 90 80 70 60 50 40 30 20 10 0 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 180 120 90 60 30 100 75 50 25 16 d.c. 180 120 90 60 30 14 Mean power dissipation - (kW) Maximum heatsink temperature, T Heatsink - ( ° C) 125 12 10 8 6 4 2 0 0 0 0 1000 2000 3000 4000 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR 125 Maximum heatsink temperature T heatsink -(o C) Maximum permissible case temperature , T case -(° C) 125 100 75 50 d.c. 180 120 90 60 30 25 100 75 50 d.c. 180 120 90 60 30 25 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 0 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Double side cooled 16 Transient Thermal Impedance - Zth (°C/kW) Double side cooled 14 Anode side cooled Anode side cooled Cathode side cooled Cathode side cooled 12 Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) 1 3.01541 2 3 4 1.048955 0.983519 0.983519 0.703874 1.904794 0.059 0.059 3.156003 4.092806 1.556555 1.623962 2.69023 13.79162 0.059 0.205916 7.077369 3.483481 1.745839 2.634274 6.648601 8.436484 1.762119 Z th [ Ri (1 exp(T / Ti )] i 4 10 0.08069 i 1 8 Rth(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. 6 Double side cooling Zth (z) ° sine. rect. 180 0.44 0.31 120 0.49 0.43 90 0.55 0.49 60 0.60 0.55 30 0.64 0.61 15 0.66 0.64 4 2 0 0.001 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 0.01 0.1 1 10 Anode Side Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.61 0.58 15 0.62 0.61 Cathode Sided Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.60 0.58 15 0.62 0.60 100 Time (s) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR 10 140 28 130 26 120 24 110 22 100 20 ITSM 90 18 80 16 I2t 70 14 60 12 50 10 Conditions: Tcase= 125°C VR = 0 half-sine wave 40 30 20 10 8 6 4 2 0 1 1 10 1 100 I2t (MA2s) Conditions: Tcase = 125°C VR =0 Pulse width = 10ms Surge current, ITSM - (kA) Surge current, ITSM- (kA) 100 0 100 10 Pulse width, tP - (ms) Number of cycles Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 600 25000 Qsmax = 5413.5*(di/dt)0.4762 IRRmax = 58.296*(di/dt)0.7559 500 Reverse recovery current, IRR - (A) Stored Charge, Qs - (uC) 20000 15000 Qsmin = 4030.8*(di/dt)0.5002 10000 Conditions: Tj= 125ºC VRpeak ~ 3100V VRM ~ 2100V snubber as appropriate to control reverse voltage 5000 400 300 IRRmin = 49.567*(di/dt)0.7701 200 Conditions : Tj = 125ºC VRpeak ~ 3100V VRM ~ 2100V snubber as appropriate to control reverse voltage 100 0 0 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR 10 9 Pulse Width us 100 200 500 1000 10000 Gate trigger voltage, VGT - (V) 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 o 1 Tj = -40oC Tj = 25oC Lower Limit Tj = 125 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Device 22CT93A 28CT93A 42CT93A DCR3990A52 DCR3220A65 DCR2560A85 Maximum Minimum Thickness Thickness (mm) (mm) 35.165 34.555 35.24 34.63 35.47 34.86 35.61 35 35.85 35.24 36.19 35.58 Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: A Fig.16 Package outline 9/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com