DCR5900A28 Phase Control Thyristor DS6151-2 September 2014 (LN 31946) j KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 2800V 5900A 79000A 2000V/µs 250A/µs * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR5900A28 DCR5900A26 DCR5900A24 Repetitive Peak Voltages VDRM and VRRM V 2800 2600 2400 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: A (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR5900A26 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 5900 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 9277 A Continuous (direct) on-state current - 7715 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 79.0 kA VR = 0 31.2 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.00603 °C/W Single side cooled Anode DC - 0.01024 °C/W Cathode DC - 0.01467 °C/W Double side - 0.001 °C/W - 0.002 °C/W - 125 °C Clamping force 83.0kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 74.0 91.0 kN 2/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 2000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 250 A/µs Gate source 30V, 10, Non-repetitive - 500 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 500 to 4000A at Tcase = 125°C - 0.766 V Threshold voltage – High level 4000 to 8000A at Tcase = 125°C - 0.92 V On-state slope resistance – Low level 500A to 4000A at Tcase = 125°C - 0.1048 m On-state slope resistance – High level 4000A to 8000A at Tcase = 125°C - 0.06 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 250 µs 1520 3280 µC 32 56 A Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time IT = 5000A, Tj = 125°C, VR = 200V, dI/dt = 5A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 3000A, Tj = 125°C, dI/dt – 1A/µs, VRpeak ~1700V, VR ~ 1100V IRR Reverse recovery current IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 300 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES 10000 9000 125ºC min 25ºC max 25ºC min 125ºC max Instantaneous on-state current, IT -(A) 8000 7000 6000 5000 4000 3000 2000 1000 0 0.6 0.8 1 1.2 1.4 Instantaneous on-state voltage, VT - (V) 1.6 Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 1.073114 B = -0.098284 C = -0.000016 D = 0.015109 these values are valid for Tj = 125°C for IT 500A to 8000A 4/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR 130 16 Mean power dissipation - (kW) 12 10 8 6 4 120 110 Maximum case temperature, T case ( o C ) 14 180 120 180 120 90 60 30 90 100 60 90 30 80 70 60 50 40 30 20 10 2 0 0 1000 2000 3000 4000 5000 6000 0 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) 6000 120 180 110 120 Fig.4 Maximum permissible case temperature, double side cooled – sine wave 12 90 100 10 60 30 90 Mean power dissipation - (kW) Maximum heatsink temperature, THeatsink - ( ° C) Fig.3 On-state power dissipation – sine wave 80 70 60 50 40 8 6 4 30 d.c. 180 120 90 60 30 2 20 10 0 0 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 1000 2000 3000 4000 5000 6000 7000 Mean on-state current, IT (AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR 130 d.c. 180 120 90 60 110 100 90 80 70 60 50 40 30 20 10 Maximum heatsink temperature Theatsink -(o C) Maximum permissible case temperature , Tcase -(° C) 120 120 d.c. 180 120 90 60 30 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 5000 6000 7000 0 0 1000 3000 4000 5000 6000 7000 Mean on-state current, IT (AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 2000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double side cooled Anode side cooled Cathode side cooled Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) 1 3.01541 2 3 4 1.048955 0.983519 0.983519 0.703874 1.904794 0.059 0.059 3.156003 4.092806 1.556555 1.623962 2.69023 13.79162 0.059 0.205916 7.077369 3.483481 1.745839 2.634274 6.648601 8.436484 1.762119 0.08069 i 4 Zth [Ri (1 exp(T / Ti )] i 1 Rth(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Double side cooling Zth (z) ° sine. rect. 180 0.44 0.31 120 0.49 0.43 90 0.55 0.49 60 0.60 0.55 30 0.64 0.61 15 0.66 0.64 Anode Side Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.61 0.58 15 0.62 0.61 Cathode Sided Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.60 0.58 15 0.62 0.60 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR 120 90 Conditions: Tj = 125ºC VR = 0 Pulse width = 10ms 80 120 Conditions: Tj = 125ºC VR = 0 half sine wave ITSM 100 100 60 50 40 30 80 80 60 60 40 40 I2t (MA2s) Surge current, ITSM - (kA) Surge current, ITSM - (kA) 70 I2t 20 20 20 10 0 1 10 Number of cycles 0 100 0 1 10 Pulse width, tp - (ms) Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 700 10000 Conditions: Tj = 125ºC, VR peak ~ 1700V VRM ~ 1100V Snubber as appropriate to control 8000 7000 QS max = 3281.4*(di/dt) 0.4263 6000 5000 4000 QS min = 1521.2*(di/dt) 0.5697 3000 Conditions: TJ = 125ºC, VRpeak ~ 1700V VRM ~ 1100V snubber as appropriate to control reverse voltages 600 Reverse recovery current, IRR - (A) 9000 Stored Charge, Qs - (uC) 100 500 400 I RRmax = 55.65*(di/dt)0.7782 300 200 2000 I RRmin = 32.43*(di/dt)0.774 100 1000 0 0 2 4 6 8 10 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 12 0 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR 10 9 8 Upper Limit Gate trigger voltage, VGT - (V) 7 6 5 Preferred gate drive area 4 3 2 Tj = -40oC Tj = 25oC Lower Limit 1 Tj = 125oC 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current IGT, - (A) 0.7 0.8 0.9 1 Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 25 10W 20W 50W 100W Gate trigger voltage, VGT - (V) 20 150W -40C 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, I GT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: A Fig.16 Package outline 9/10 www.dynexsemi.com DCR5900A28 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 10/10 www.dynexsemi.com