ELPIDA M2S56D30AKT

DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
DESCRIPTION
M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,
M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,
M2S56D40ATP/ AKT is a 4-bank x 4194304-word x 16-bit,
double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced
to the rising edge of CLK.Input data is registered on both edges of data strobes, and output data and data
strobe are referenced on both edges of CLK. The M2S56D20/30/40A achieve very high speed data rate up to
166MHz(-60), 133MHz(-75A/-75) and are suitable for main memory in computer systems.
FEATURES
- VDD=VDDQ=2.5V+0.2V
- Double data rate architecture; two data transfers per clock cycle
- Bidirectional, data strobe (DQS) is transmitted/received with data
- Differential clock inputs (CLK and /CLK)
- DLL aligns DQ and DQS transitions
- Commands are entered on each positive CLK edge
- Data and data mask are referenced to both edges of DQS
- 4-bank operations are controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2.0/2.5 (programmable)
- Burst length- 2/4/8 (programmable)
- Burst type- sequential / interleave (programmable)
- Auto precharge / All bank precharge is controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4) / A0-9(x8) / A0-8(x16)
- SSTL_2 Interface
- Both 66-pin TSOP Package and 64-pin Small TSOP Package
M2S56D*0ATP: 0.65mm lead pitch 66-pin TSOP Package
M2S56D*0AKT: 0.4mm lead pitch 64-pin Small TSOP Package
- JEDEC standard
- Low Power for the Self Refresh Current
Ultra Low Power Version : ICC6 < 1mA ( -60UL , -75AU , -75UL )
Low Power Version
: ICC6 < 2mA ( -60L , -75AL , -75L )
Operating Frequencies
Max. Frequency
@CL=2.0 *
Max. Frequency
@CL=2.5 *
Standard
M2S56D20/30/40ATP - 60UL / - 60L / - 60
M2S56D20/30/40AKT - 60UL / - 60L / - 60
133MHz
166MHz
DDR333B
M2S56D20/30/40ATP - 75AU / - 75AL / - 75A
M2S56D20/30/40AKT - 75AU / - 75AL / - 75A
133MHz
133MHz
DDR266A
M2S56D20/30/40ATP - 75UL / - 75L / - 75
M2S56D20/30/40AKT - 75UL / - 75L / - 75
100MHz
133MHz
DDR266B
* CL = CAS(Read) Latency
This Product became EOL in July, 2004.
 Elpida Memory, Inc. 2003
1
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
PIN CONFIGURATION 1 (TOP VIEW)
x4
x8
x16
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
CLK,/CLK
CKE
/CS
/RAS
/CAS
/WE
DQ0-15
DQS
LDQS,UDQS
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66pin TSOP(II)
400mil width
x
875mil length
0.65mm
Lead Pitch
ROW
A0-12
Column
A0-9,11(x4)
A0-9 (x8)
A0-8 (x16)
: Master Clock
: Clock Enable
: Chip Select
: Row Address Strobe
: Column Address Strobe
: Write Enable
: Data I/O
: Data Strobe
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
/CLK
CLK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CLK
CLK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CLK
CLK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
DM
LDM,UDM
VREF
A0-12
BA0,1
VDD
VDDQ
: Write Mask
: Reference Voltage
: Address Input
: Bank Address Input
: Power Supply
: Power Supply for Output
VSS
VSSQ
: Ground
: Ground for Output
2
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
PIN CONFIGURATION 2 (TOP VIEW)
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
CLK,/CLK
CKE
/CS
/RAS
/CAS
/WE
DQ0-15
DQS
LDQS,UDQS
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
: Master Clock
: Clock Enable
: Chip Select
: Row Address Strobe
: Column Address Strobe
: Write Enable
: Data I/O
: Data Strobe
PIN PITCH 0.4 mm
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
64pin sTSOP
X4
X8
X 16
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
VSS
VSS
DQ15
DQ7
VSSQ VSSQ
DQ14
NC
DQ13
DQ6
VDDQ VDDQ
DQ12
NC
DQ11
DQ5
VSSQ VSSQ
DQ10
NC
DQ9
DQ4
VDDQ VDDQ
DQ8
NC
VSSQ VSSQ
UDQS DQS
NC
NC
VREF VREF
VSS
VSS
UDM
DM
/CLK
/CLK
CLK
CLK
CKE
CKE
NC
NC
A12
A12
A11
A11
A9
A9
A8
A8
A7
A7
A6
A6
A5
A5
A4
A4
VSS
VSS
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CLK
CLK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
DM
LDM,UDM
VREF
A0-12
BA0,1
VDD
VDDQ
: Write Mask
: Reference Voltage
: Address Input
: Bank Address Input
: Power Supply
: Power Supply for Output
VSS
VSSQ
: Ground
: Ground for Output
3
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
PACKAGE OUTLINE OF sTSOP
.05
0.125 +0
-0.02
33
64
*2 9.05+0.1
10.65+0.2
A
1
32
*1
B
1.2 MAX
13.1+0.1
0.4 NOM
0.1
*3
+0.1
0.16 -0.05
0.08 M
0 - 10
Note)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
0.5+0.1
0.6+0.15
0.8
0.25
(1)
0.125+0.075
Detail A (NTS)
0.35
0.55 MAX
Detail B (NTS)
4
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
PIN FUNCTION
SYMBOL
TYPE
DESCRIPTION
Input
Clock: CLK and /CLK are differential clock inputs. All address and control
input signals are sampled on the crossing of the positive edge of CLK and
negative edge of /CLK. Output (read) data is referenced to the crossings of
CLK and /CLK (both directions of crossing).
CKE
Input
Clock Enable: CKE controls internal clock. When CKE is low, internal clock
for the following cycle is ceased. CKE is also used to select auto / self
refresh.After self refresh mode is started, CKE becomes asynchronous
input. Self refresh is maintained as long as CKE is low.
/CS
Input
Chip Select: When /CS is high, any command means No Operation.
/RAS, /CAS, /WE
Input
Combination of /RAS, /CAS, /WE defines basic commands.
A0-12
Input
A0-12 specify the Row / Column Address in conjunction with BA0,1. The
Row Address is specified by A0-12. The Column Address is specified by
A0-9,11(x4), A0-9(x8) and A0-8(x16). A10 is also used to indicate precharge
option. When A10 is high at a read / write command, an auto precharge is
performed. When A10 is high at a precharge command, all banks are
precharged.
BA0,1
Input
Bank Address: BA0,1 specifies one of four banks to which a command is
applied. BA0,1 must be set with ACT, PRE, READ, WRITE commands.
CLK, /CLK
DQ0-15(x16),
DQ0-7(x8),
DQ0-3(x4),
DQS
DM
VDD, VSS
VDDQ, VSSQ
VREF
Input / Output Data Input/Output: Data bus
Data Strobe: Output pin during Read operation, input pin during Write
Input / Output operation. Edge-aligned with read data, placed at the centered of write data
to capture the write data. For the x16, LDQS corresponds to the data on
DQ0-DQ7; UDQS correspond to the data on DQ8-DQ15.
Input
Input Data Mask: DM is an input mask signal for write data. Input data
is masked when DM is sampled HIGH along with the input data
during a WRITE operations. DM is sampled on both edges of DQS.
Although DM pins are input only, the DM loading matches the DQ
and DQS loading. For the x16, LDM corresponds to the data on DQ0-DQ7;
UDM corresponds to the data on DQ8-DQ15.
Power Supply Power Supply for the memory array and peripheral circuitry.
Power Supply VDDQ and VSSQ are supplied to the Output Buffers only.
Input
SSTL_2 reference voltage.
5
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
BLOCK DIAGRAM
DLL
Memory
Array
Bank #0
DQ0 - 15
UDQS,LDQS
I/O Buffer
QS Buffer
Memory
Array
Bank #1
Memory
Array
Bank #2
Memory
Array
Bank #3
Mode Register
Control Circuitry
Address Buffer
Control Signal Buffer
Clock Buffer
A0-12
/CS /RAS /CAS /WE
BA0,1
CLK /CLK CKE
TYPE DESIGNATION CODE
UDM,
LDM
This rule is applied to only Synchronous DRAM family.
M 2 S 56 D 3 0 A KT – 60 UL
Power Grade UL/U: Ultra Low power L: Low power, Blank: standard
Speed Grade 75: 133MHz@CL=2.5,100MHz@CL=2.0 (DDR266B)
75A: 133MHz@CL=2.5,133MHz@CL=2.0 (DDR266A)
60: 166MHz@CL=2.5,133MHz@CL=2.0 (DDR333B)
Package Type TP: TSOP(II), KT: sTSOP(Small TSOP)
Process Generation
Function Reserved for Future Use
Organization 2 n 2: x4, 3: x8, 4: x16
DDR Synchronous DRAM
Density 56: 256M bits
Interface V:LVTTL, S:SSTL_3, _2
Memory Style (DRAM)
Mitsubishi Main Designation
6
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
BASIC FUNCTIONS
The M2S56D20/30/40A provides basic functions, bank (row) activate, burst read / write, bank (row)
precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS and /WE at
CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and
precharge option, respectively. Refer to the command truth table for the detailed definition of commands.
/CLK
CLK
/CS
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
define basic commands
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates one row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data appears after
/CAS latency. When A10 =H in this command, the bank is deactivated after the burst read (autoprecharge, READA)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be written
is defined by burst length. When A10 =H in this command, the bank is deactivated after the burst write
(auto-precharge, WRITEA)
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates burst read
/write operation. When A10 =H in this command, all banks are deactivated (precharge all, PREA ).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh addresses including bank address are generated
internally. After this command, the banks are precharged automatically.
7
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
COMMAND TRUTH TABLE
COMMAND
MNEMONIC
CKE
n-1
CKE
n
/CS
A10
/AP
A0-9,
11-12
Deselect
DESEL
H
X
H
X
X
X
X
X
X
No Operation
NOP
H
X
L
H
H
H
X
X
X
Row Address Entry &
Bank Activate
ACT
H
H
L
L
H
H
V
V
V
Single Bank Precharge
PRE
H
H
L
L
H
L
V
L
X
Precharge All Banks
PREA
H
H
L
L
H
L
X
H
X
Column Address Entry
& Write
WRITE
H
H
L
H
L
L
V
L
V
Column Address Entry
& Write with
Auto-Precharge
WRITEA
H
H
L
H
L
L
V
H
V
Column Address Entry
& Read
READ
H
H
L
H
L
H
V
L
V
Column Address Entry
& Read with
Auto-Precharge
READA
H
H
L
H
L
H
V
H
V
Auto-Refresh
REFA
H
H
L
L
L
H
X
X
X
Self-Refresh Entry
REFS
H
L
L
L
L
H
X
X
X
Self-Refresh Exit
REFSX
L
H
H
X
X
X
X
X
X
Burst Terminate
TERM
L
H
H
H
L
L
H
H
H
H
H
L
X
X
X
X
X
X
1
Mode Register Set
MRS
H
H
L
L
L
L
L
L
V
2
/RAS /CAS
/WE BA0,1
Note
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
NOTE:
1. Applies only to read bursts while autoprecharge is disabled; this command is undefined (and should not be
used) during read bursts while autoprecharge is enabled, as well as during write bursts.
2. BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode
Register;BA0=1 ,BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are
reserved; A0-A12 provide the op-codes to be written to the selected Mode Register.
8
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (1/4)
Current State /CS /RAS /CAS /WE Address
IDLE
H
X
X
X X
L
H
H
H X
L
H
H
L BA
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
ROW ACTIVE
READ(AutoPrecharge
Disabled)
L
L
L
L
H
L
L
H
L
L
L
L
H
L
L
X
H
H
X
H
H
L
H
L
Command
DESEL
NOP
TERM
READ / WRITE
ACT
Action
NOP
NOP
ILLEGAL
ILLEGAL
Bank Active, Latch RA
PRE / PREA
REFA
NOP
Auto-Refresh
4
5
5
MRS
Mode Register Set
X
H
L
BA, A10
X
Op-Code,
Mode-Add
X
X
BA
DESEL
NOP
TERM
L
H
BA, CA, A10
READ / READA
H
L
L
BA, CA, A10
WRITE / WRITEA
L
L
L
L
L
L
H
H
L
H
L
H
ACT
PRE / PREA
REFA
L
L
L
L
MRS
ILLEGAL
H
L
L
X
H
H
X
H
H
X
H
L
BA, RA
BA, A10
X
Op-Code,
Mode-Add
X
X
BA
NOP
NOP
NOP
Begin Read, Latch CA,
Determine Auto-Precharge
Begin Write, Latch CA,
Determine Auto-Precharge
Bank Active / ILLEGAL
Precharge / Precharge All
ILLEGAL
DESEL
NOP
TERM
L
H
L
H
BA, CA, A10
READ / READA
L
L
L
L
H
L
L
L
L
H
H
L
L
H
L
H
WRITE / WRITEA
ACT
PRE / PREA
REFA
L
L
L
L
BA, CA, A10
BA, RA
BA, A10
X
Op-Code,
Mode-Add
NOP (Continue Burst to END)
NOP (Continue Burst to END)
Terminate Burst
Terminate Burst, Latch CA, Begin
New Read, Determine AutoPrecharge
ILLEGAL
Bank Active / ILLEGAL
Terminate Burst, Precharge
ILLEGAL
MRS
ILLEGAL
Notes
2
2
2
3
2
9
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (2/4)
Current State /CS /RAS /CAS /WE Address
X
X
X X
WRITE(Auto- H
Precharge
L
H
H
H X
Disabled)
L
H
H
L BA
READ with
AutoPrecharge
WRITE with
AutoPrecharge
L
H
L
H BA, CA, A10
L
H
L
L
L
L
L
L
L
L
H
H
L
L
L
L
H
L
L
L
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
L
L
H
H
L
L
L
L
H
L
L
L
L
L
L
X
H
H
H
H
L
L
X
H
H
L
L
H
H
H BA, RA
L BA, A10
H X
Op-Code,
L
Mode-Add
X X
H X
L BA
H BA, CA, A10
L BA, CA, A10
H BA, RA
L BA, A10
H X
Op-Code,
L
Mode-Add
X X
H X
L BA
H BA, CA, A10
L BA, CA, A10
H BA, RA
L BA, A10
L
L
L
L
L
L
BA, CA, A10
H X
Op-Code,
L
Mode-Add
Command
DESEL
Action
NOP (Continue Burst to END)
NOP (Continue Burst to END)
ILLEGAL
Terminate Burst, Latch CA, Begin
READ / READA
Read, Determine Auto-Precharge
Terminate Burst, Latch CA, Begin
WRITE / WRITEA
Write, Determine Auto-Precharge
ACT
Bank Active / ILLEGAL
PRE / PREA
Terminate Burst, Precharge
REFA
ILLEGAL
Notes
NOP
TERM
MRS
ILLEGAL
DESEL
NOP
TERM
READ / READA
WRITE / WRITEA
ACT
PRE / PREA
REFA
NOP (Continue Burst to END)
NOP (Continue Burst to END)
ILLEGAL
ILLEGAL for Same Bank
ILLEGAL for Same Bank
Bank Active / ILLEGAL
Precharge / ILLEGAL
ILLEGAL
MRS
ILLEGAL
DESEL
NOP
TERM
READ / READA
WRITE / WRITEA
ACT
PRE / PREA
NOP (Continue Burst to END)
NOP (Continue Burst to END)
ILLEGAL
ILLEGAL for Same Bank
ILLEGAL for Same Bank
Bank Active / ILLEGAL
Precharge / ILLEGAL
REFA
ILLEGAL
MRS
ILLEGAL
3
3
2
6
6
2
2
7
7
2
2
10
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (3/4)
Current State /CS /RAS /CAS /WE Address
H
X
X
X X
PRECHARGING L
H
H
H X
L
H
H
L BA
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
ROW
ACTIVATING
WRITE RECOVERING
Command
DESEL
Action
NOP (Idle after tRP)
NOP
TERM
READ / WRITE
ACT
NOP (Idle after tRP)
ILLEGAL
ILLEGAL
ILLEGAL
PRE / PREA
REFA
NOP (Idle after tRP)
ILLEGAL
MRS
ILLEGAL
DESEL
NOP (Row Active after tRCD)
Notes
2
2
2
L
L
L
L
H
L
L
L
L
H
X
X
L BA, A10
H X
Op-Code,
L
Mode-Add
X X
4
L
L
L
L
H
H
H
L
H
H
L
H
H
L
X
H
X
BA
BA, CA, A10
BA, RA
NOP
TERM
READ / WRITE
ACT
NOP (Row Active after tRCD)
ILLEGAL
ILLEGAL
ILLEGAL
2
2
2
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
2
L
L
L
REFA
ILLEGAL
L
L
L
MRS
ILLEGAL
H
X
X
H X
Op-Code,
L
Mode-Add
X X
DESEL
NOP
L
L
L
L
H
H
H
L
H
H
L
H
H
L
X
H
X
BA
BA, CA, A10
BA, RA
NOP
TERM
READ / WRITE
ACT
NOP
ILLEGAL
ILLEGAL
ILLEGAL
2
2
2
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
2
L
L
L
REFA
ILLEGAL
L
L
L
H X
Op-Code,
L
Mode-Add
MRS
ILLEGAL
11
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (4/4)
Current State /CS /RAS /CAS /WE Address
REFRESHING H
X
X
X X
L
H
H
H X
L
H
H
L BA
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
L
L
H
L BA, A10
L
L
L
H X
Op-Code,
L
L
L
L
Mode-Add
H
X
X
X
X
MODE
REGISTER
L
H
H
H X
SETTING
L
H
H
L BA
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
L
L
H
L BA, A10
L
L
L
H X
Op-Code,
L
L
L
L
Mode-Add
Command
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
Action
NOP (Idle after tRFC)
NOP (Idle after tRFC)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
MRS
ILLEGAL
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
NOP (Idle after tMRD)
NOP (Idle after tMRD)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
MRS
ILLEGAL
Notes
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation
NOTES:
1. All entries are valid only when CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the
state of specific bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
6. Refer to Read with Auto-Precharge in page 28.
7. Refer to Write with Auto-Precharge in page 30.
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
12
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE for CKE
Current State CKE n-1 CKE n
H
X
SELFL
H
REFRESHING
L
H
L
H
L
H
L
H
L
L
H
X
POWER
L
H
DOWN
L
L
H
H
ALL BANKS
H
L
IDLE
H
L
H
L
H
L
H
L
H
L
ANY STATE
other than
listed above
/CS
X
H
L
L
L
L
X
X
X
X
X
L
H
L
L
L
L
/RAS
X
X
H
H
H
L
X
X
X
X
X
L
X
H
H
H
L
/CAS
X
X
H
H
L
X
X
X
X
X
X
L
X
H
H
L
X
/WE
X
X
H
L
X
X
X
X
X
X
X
H
X
H
L
X
X
Address
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
H
H
X
X
X
X
X
H
L
X
X
X
X
X
L
L
H
L
X
X
X
X
X
X
X
X
X
X
Action
INVALID
Exit Self-Refresh (Idle after tRFC)
Exit Self-Refresh (Idle after tRFC)
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Maintain Self-Refresh)
INVALID
Exit Power Down to Idle
NOP (Maintain Power Down)
Refer to Function Truth Table
Enter Self-Refresh
Enter Power Down
Enter Power Down
ILLEGAL
ILLEGAL
ILLEGAL
Refer to Current State =Power
Down
Refer to Function Truth Table
Begin CLK Suspend at Next
Cycle
Exit CLK Suspend at Next Cycle
Maintain CLK Suspend
Notes
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
3
3
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
NOTES:
1. Low to High transition of CKE re-enable CLK and other inputs asynchronously.
A minimum setup time must be satisfied before any command except REFSX.
2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State.
3. Must be legal command.
13
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
SIMPLIFIED STATE DIAGRAM
POWER
APPLIED
POWER
ON
PRE
CHARGE
ALL
PREA
SELF
REFRESH
REFS
MRS / EMRS
REFSX
MRS / EMRS
MODE
REGISTER
SET
AUTO
REFRESH
REFA
IDLE
CKEL
CKEH
Active
Power
Down
ACT
POWER
DOWN
CKEL
CKEH
ROW
ACTIVE
WRITE
BURST
STOP
READ
WRITE
READ
WRITEA
WRITE
READA
READ
WRITEA
READ
TERM
READA
READA
PRE
WRITEA
PRE
READA
PRE
PRE
CHARGE
Automatic Sequence
Command Sequence
14
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
POWER ON SEQUENCE
The following power on sequences are necessary to guarantee the proper operations of the DDR SDRAM.
1. Apply VDD before or at the same time as VDDQ
2. Apply VDDQ before or at the same time as VTT & VREF
3. Maintain stable conditions for 200us after stable power and CLK are applied, assert NOP or DSEL
4. Issue Precharge command for all banks of the device
5. Issue EMRS to program proper functions
6. Issue MRS to configure the Mode Register and to reset the DLL
7. Issue 2 or more Auto Refresh commands
8. Maintain stable conditions for 200 cycle
After these sequences, the DDR SDRAM is in the idle state and ready for normal operation.
CLK
MODE REGISTER
/CLK
Burst Length, Burst Type and /CAS Latency can be programmed by
configuring the mode register (MRS). The mode register stores these data
until the next MRS command, which may be issued when both banks are in
idle state. After tMRD from an MRS command, the DDR SDRAM is ready to
accept the new command.
/CS
/RAS
/CAS
/WE
BA1 BA0 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
BA0
A0
BA1
0
0
0
0
0
Latency
Mode
0
0
0
0
0
1
1
1
1
DR
CL
0 0
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0
LTMODE
/CAS Latency
R
R
2
R
R
R
2.5
R
BT
BL
Burst
Length
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
Burst Type
DLL Reset
0
NO
1
YES
V
A11-A0
BT=0
R
2
4
8
R
R
R
R
BT=1
R
2
4
8
R
R
R
R
0
Sequential
1
Interleaved
R: Reserved for Future Use
15
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
EXTENDED MODE REGISTER
DLL disable / enable mode can be programmed in the extended
mode register (EMRS). The extended mode register stores these
data until the next EMRS command, which may be issued when all
banks are in idle state. After tMRD from a EMRS command, the DDR
CLK
/CLK
/CS
SDRAM is ready to accept the new command.
/RAS
/CAS
BA1 BA0 A12 A11 A10 A9
0
1
0
0
0
0
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
0
0
0
0
0
DS
DD
/WE
BA0
BA1
V
A11-A0
DLL Disable
Drive
Strength
0
1
0
1
DLL Enable
DLL Disable
Normal
Weak (Optional)
16
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
/CLK
CLK
Command
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
Read
Address
Write
Y
Y
DQS
Q0 Q1 Q2 Q3
DQ
CL= 2
BL= 4
D0 D1 D2 D3
Burst
Length
Burst
Length
/CAS
Latency
Initial Address BL
Column Addressing
A2
A1 A0
Sequential
0
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
0
1
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
0
1
1
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
1
0
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
1
0
1
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
1
1
0
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
1
1
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
-
0
0
0
1
2
3
0
1
2
3
-
0
1
1
2
3
0
1
0
3
2
-
1
0
2
3
0
1
2
3
0
1
-
1
1
3
0
1
2
3
2
1
0
-
-
0
0
1
0
1
-
-
1
1
0
1
0
8
4
2
Interleaved
17
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
VDD
Supply Voltage
with respect to VSS
-0.5 to 3.7
V
VDDQ
Supply Voltage for Output
with respect to VSSQ
-0.5 to 3.7
V
VI
Input Voltage
with respect to VSS
-0.5 to VDD+0.5
V
VO
Output Voltage
with respect to VSSQ
-0.5 to VDDQ+0.5
V
IO
Output Current
50
mA
Pd
Power Dissipation
1000
mW
Topr
Operating Temperature
Tstg
o
TA = 25 C
Storage Temperature
0 to 70
o
C
-65 to 150
o
C
DC OPERATING CONDITIONS
(TA=0 to 70oC, unless otherwise noted)
Symbol
VDD
VDDQ
VREF
VIH(DC)
VIL(DC)
VIN(DC)
VID(DC)
VTT
Limits
Unit Notes
Min.
Typ.
Max.
Supply Voltage
2.3
2.5
2.7
V
Supply Voltage for Output
2.3
2.5
2.7
V
Input Reference Voltage
0.49*VDDQ 0.50*VDDQ 0.51*VDDQ V
5
High-Level Input Voltage
VREF + 0.15
VDDQ+0.3
V
Low-Level Input Voltage
-0.3
VREF - 0.15 V
Input Voltage Level, CLK and /CLK
-0.3
VDDQ + 0.3 V
Input Differential Voltage, CLK and /CLK
0.36
VDDQ + 0.6 V
7
I/O Termination Voltage
VREF - 0.04
VREF + 0.04 V
6
Parameter
AC OVERSHOOT/UNDERSHOOT SPECIFICATION
Volts (V)
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or euqal to
The area between the undershoot signal and VSS must be less than or euqal to
5
4
3
2
1
VSS(0)
-1
-2
-3
Overshoot
Specification
1.6V
1.6V
4.5 V-ns
4.5 V-ns
Maximum Amplitude
VDD
Area (max.4.5V-ns)
Undershoot
Maximum Amplitude
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
5.625
7.5
Time (ns)
18
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
AVERAGE SUPPLY CURRENT from VDD
(TA=0 to 70oC, VDD = VDDQ = 2.5V + 0.2V, VSS = VSSQ = 0V, Output Open, unless otherwise noted)
Symbol
Parameter/Test Conditions
OPERATING CURRENT: One Bank; Active-Precharge; t RC = t RC MIN;
IDD0 t CK = t CK MIN; DQ, DM and DQS inputs changing twice per clock
cycle; address and control inputs changing once per clock cycle
OPERATING CURRENT: One Bank; Active-Read-Precharge;
IDD1 Burst = 2; t RC = t RC MIN; CL = 2.5; t CK = t CK MIN; IOUT= 0mA;
Address and control inputs changing once per clock cycle
IDD2P
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle;
power-down mode; CKE <VIL (MAX); t CK = t CK MIN
IDLE STANDBY CURRENT: /CS > VIH (MIN); All banks idle;
IDD2F CKE > VIH (MIN); t CK = t CK MIN; Address and other control inputs
changing once per clock cycle
Limits(Max.)
-60
-75A / -75
Organization
ALL
100
85
x4
110
95
x8
120
100
x16
140
115
ALL
10
6
ALL
35
30
IDD3P
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active;
power-down mode; CKE < VIL (MAX); t CK = t CK MIN
ALL
20
15
IDD3N
ACTIVE STANDBY CURRENT: /CS > VIH (MIN); CKE > VIH (MIN); One
bank; Active-Precharge; t RC = t RAS MAX; t CK = t CK MIN; DQ,DM
and DQS inputs changing twice per clock cycle; address and other
control inputs changing once per clock cycle
ALL
55
45
x4
180
140
x8
190
150
x16
220
180
x4
180
130
x8
190
140
x16
220
160
ALL
150
140
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;One bank
IDD4R active; Address and control inputs changing once per clock cycle;CL=2.5;
t CK = t CK MIN; IOUT = 0 mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank
active; Address and control inputs changing once per clock cycle;
IDD4W
CL=2.5; t CK = t CK MIN;DQ, DM and DQS inputs changing twice per
clock cycle
IDD5 AUTO REFRESH CURRENT: t RC = t RFC (MIN)
IDD6
SELF REFRESH CURRENT: CKE < 0.2V
OPERATING CURRENT-Four bank Operation: Four bank are interleaved
IDD7
with BL=4, refer to the Notes 20
Unit
Notes
mA
-60/-75A/-75
3
3
9
-60/-75A/-75 L
2
2
9,21
-60/-75AU/-75 UL
1
1
9,22
x4
270
215
20
x8
290
235
20
x16
330
270
20
AC OPERATING CONDITIONS AND CHARACTERISTICS
(TA=0 to 70oC, VDD = VDDQ = 2.5V + 0.2V, VSS = VSSQ = 0V, Output Open, unless otherwise noted)
Symbol
Parameter / Test Conditions
VIH(AC) High-Level Input Voltage (AC)
Limits
Min.
VREF + 0.31
VIL(AC) Low-Level Input Voltage (AC)
VID(AC) Input Differential Voltage, CLK and /CLK
VIX(AC) Input Crossing Point Voltage, CLK and /CLK
IOZ
II
Off-state Output Current /Q floating Vo=0 to VDDQ
Input Current / VIN=0 to VDDQ
Max.
0.7
Unit
Notes
V
VREF - 0.31
V
VDDQ + 0.6
V
7
V
8
0.5*VDDQ - 0.2 0.5*VDDQ + 0.2
-5
5
-2
2
uA
uA
IOH
Output High Current (VOUT = VTT+0.84V)
-16.8
mA
IOL
Output High Current (VOUT = VTT-0.84V)
16.8
mA
19
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
AC TIMING REQUIREMENTS (1/2)
(TA=0 to 70oC, VDD = VDDQ = 2.5V +0.2V, VSS = VSSQ = 0V, unless otherwise noted)
Symbol
AC Characteristics Parameter
tAC
-60
-75A
-75
Unit
Min.
Max
Min.
Max
Min.
Max
DQ Output Valid data delay time from CLK//CLK
-0.70
0.70
-0.75
0.75
-0.75
0.75
ns
tDQSCK DQ Output Valid data delay time from CLK//CLK
-0.60
0.60
-0.75
0.75
-0.75
0.75
ns
tCH
CLK High level width
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tCL
CLK Low level width
0.45
0.55
0.45
0.55
0.45
0.55
tCK
6
15
7.5
15
7.5
15
ns
7.5
15
7.5
15
10
15
ns
CL=2.5
Notes
tCK
CLK cycle time
tDS
Input Setup time (DQ,DM)
0.45
0.5
0.5
ns
26,27
tDH
Input Hold time(DQ,DM)
0.45
0.5
0.5
ns
26,27
DQ and DM input pulse width (for each input)
1.75
1.75
1.75
ns
tHZ
Data-out-high impedance time from CLK//CLK
-0.70
0.70
-0.75
0.75
-0.75
0.75
ns
14
tLZ
Data-out-low impedance time from CLK//CLK
-0.70
0.70
-0.75
0.75
-0.75
0.75
ns
14
0.5
ns
tDIPW
CL=2
tDQSQ DQ Valid data delay time from DQS
tHP
Clock half period
tQH
Output DQS valid window
tQHS
0.45
0.5
tCLmin
or
tCHmin
tCLmin
or
tCHmin
tCLmin
or
tCHmin
ns
tHPtQHS
tHPtQHS
tHPtQHS
ns
Data Hold Skew Factor
0.55
1.25
0.75
0.75
1.25
0.75
0.75
tCK
1.25
tCK
tDQSS Write command to first DQS latching transition
0.75
tDQSH DQS input High level width
0.35
0.35
0.35
tCK
tDQSL DQS input Low level width
0.35
0.35
0.35
tCK
tDSS
DQS falling edge to CLK setup time
0.2
0.2
0.2
tCK
tDSH
DQS falling edge hold time from CLK
0.2
0.2
0.2
tCK
tMRD
Mode Register Set command cycle time
12
15
15
ns
0
0
0
ns
16
tCK
15
tWPRES Write preamble setup time
tWPST Write postamble
0.4
tWPRE Write preamble
0.25
0.6
0.25
0.4
0.6
0.25
0.4
0.6
tCK
tIH
Address and Control input hold time(fast slew rate)
0.75
0.9
0.9
ns
23,25
tIS
Address and Control input hold time(fast slew rate)
0.75
0.9
0.9
ns
23,25
tIH
Address and Control input hold time(Slow slew rate)
0.8
0.9
0.9
ns
24,25
tIS
Address and Control input hold time(Slow slew rate)
0.8
0.9
0.9
ns
24,25
tRPST Read postamble
0.4
0.6
0.4
0.6
0.4
0.6
tCK
tRPRE Read preamble
0.9
1.1
0.9
1.1
0.9
1.1
tCK
20
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
AC TIMING REQUIREMENTS (2/2)
(TA=0 to 70oC, VDD = VDDQ = 2.5V +0.2V, VSS = VSSQ = 0V, unless otherwise noted)
Symbol
-60
AC Characteristics Parameter
-75A
Min.
Max
120,000
-75
Min.
Max
45
120,000
Min.
Max
45
120,000
Unit
tRAS
Row Active time
42
tRC
Row Cycle time(operation)
60
65
65
ns
tRFC
Auto Ref. to Active/Auto Ref. command period
72
75
75
ns
tRCD
Row to Column Delay
18
20
20
ns
tRP
Row Precharge time
18
20
20
ns
tRRD
Act to Act Delay time
12
15
15
ns
tWR
Write Recovery time
15
15
15
ns
tDAL
Auto Precharge write recovery + precharge time
35
35
35
ns
tWTR
Internal Write to Read Command Delay
1
1
1
tCK
tXSNR Exit Self Ref. to non-Read command
75
75
75
ns
tXSRD Exit Self Ref. to -Read command
ns
200
200
200
tCK
tXPNR Exit Power down to command
1
1
1
tCK
tXPRD Exit Power down to -Read command
1
tREFI
Average Periodic Refresh interval
1
7.8
1
7.8
7.8
Notes
tCK
18
us
17
Output Load Condition
VREF
DQS
DQ
V TT =V REF
VREF
50Ω
V OUT
Zo=50Ω
30pF
V REF
Output Timing
Measurement
Reference Point
CAPACITANCE
(TA=0 to 70oC, VDD = VDDQ = 2.5V + 0.2V, VSS = VSSQ = 0V, unless otherwise noted)
Symbol
CI(A)
CI(C)
CI(K)
CI/O
Limits
Delta
Unit Notes
Min. Max. Cap.(Max.)
Input Capacitance, address pin
VI=1.25v
2.0 3.0
pF
11
0.50
Input Capacitance, control pin
f=100MHz
2.0 3.0
pF
11
Input Capacitance, CLK pin
VI=25mVrms 2.0 3.0
0.25
pF
11
I/O Capacitance, I/O, DQS, DM pin
4.0 5.0
0.50
pF
11
Parameter
Test Condition
21
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
Note:
1. All voltages are referenced to VSS.
2. Tests for AC timing, IDD, and electrical AC and DC characteristics, may be conducted at nominal
reference/supply voltage levels. However, the specifications and device operations are guaranteed for the full
voltage range specified.
3. AC timing and IDD tests may use the VIL to VIH swing of up to 1.5V in the test environment. Input timing is
still referenced to VREF (or to the crossing point for CK//CK), and parameter specifications are guaranteed
for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals is
1V/ns in the range between VIL(AC) and VIH(AC).
4. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver will
effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as
the signal does not ring back above (below) the DC input LOW (HIGH) level.
5. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level
of the same. Peak-to-peak noise on VREF may not exceed +2% of the DC value.
6. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected
to be set equal to VREF, and must track variations in the DC level of VREF.
7. VID is the magnitude of the difference between the input level on CLK and the input level on /CLK.
8. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC
level of the same.
9. Enables on-chip refresh and address counters.
10. IDD specifications are tested after the device is properly initialized.
11. This parameter is sampled. VDDQ = 2.5V+0.2V, VDD = 2.5V + 0.2V , f = 100 MHz, TA = 25oC, VOUT(DC) =
VDDQ/2, VOUT(PEAK TO PEAK) = 25mV. DM inputs are grouped with I/O pins - reflecting the fact that
they are matched in loading (to facilitate trace matching at the board level).
12. The CLK//CLK input reference level (for timing referenced to CLK//CLK) is the point at which CLK and /CLK
cross; the input reference level for signals other than CLK//CLK, is VREF.
13. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes,
CKE< 0.3VDDQ is recognized as LOW.
14. t HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters
are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ),
or begins driving (LZ).
15. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for
this parameter, but system performance (bus turnaround) will degrade accordingly.
16. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or
before this CLK edge. A valid transition is defined as monotonic, and satisfies the input slew rate
specifications. When no writes were previously in progress on the bus, DQS will be transitioning from
High-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from
HIGH to LOW at this time, depending on tDQSS.
17. A maximum of eight AUTO REFRESH commands can be asserted to any given DDR SDRAM device.
18. tXPRD should be 200 tCLK when the clocks are unstable during the power down mode.
19. (no data : deleted 10/’02)
(Notes continued on next page)
22
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
Note (Continued) :
20. IDD7 : Operating current is measured under the conditions
(1).Four Bank are being interleaved with tRC(min),burst mode,address and control inputs on NOP edge
are not changing.Iout = 0mA
(2).Timing Patterns
-DDR266B(-75) (133MHz,CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK,
Setup:A0 N A1 RA0 A2 RA1 A3 RA2 N RA3
Read :A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 -repeat the same timing with random address changing
50% of data changing at every transfer
-DDR266A(-75A) (133MHz,CL=2) : tCK=7.5ns, CL=2, BL=4, tRRD=2*tCK, tRCD=3*tCK,
Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3
Read : A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 -repeat the same timing with random address changing
50% of data changing at every transfer
-DDR333B(-60) (166MHz,CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK,
Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3
Read : A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 -repeat the same timing with random address changing
50% of data changing at every transfer
*Legend: A=Active,R=Read, RA=Read with Autoprecharge ,P=Precharge, N=DESELECT
21. Low Power Version (-60L/-75AL/-75L)
22. Ultra Low Power Version (-60UL/-75AU/-75UL)
23. For command/address and CK & /CK slew rate > 1.0V/ns.
24. For command/address and CK & /CK slew rate > 0.5V/ns
25. Input Setup & Hold Time Derating for Slew Rate
Input slew Rate
0.5V/ns
0.4V/ns
0.3V/ns
∆ tIS
0
+50
+100
∆ tIH
0
+50
+100
Unit
ps
ps
ps
This derating factor will be used to increase tIS and tIH in the case where the input slew rate is below
0.5V/ns.The input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to
VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
26. I/O Setup & Hold Time Derating for Slew Rate
I/O Input slew Rate
0.5V/ns
0.4V/ns
0.3V/ns
∆ tDS
0
+75
+150
∆ tDH
0
+75
+150
Unit
ps
ps
ps
This derating factor will be used to increase tDS and tDH in the case where the I/O slew rate is below
0.5V/ns.The I/O slew rate is based on the lesser of the AC-AC slew rate and the DC-DC slew rate.
The I/O slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC)
or VIH(DC) to VIL(DC), similarly for rising transitions.
(Notes continued on next page)
23
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
Note (Continued) :
27. I/O Setup & Hold Time Derating for Rise/Fall Delta Slew Rate
Delta slew Rate
+0.0ns/V
+0.25ns/V
+0.5ns/V
∆ tDS
0
+50
+100
∆ tDH
0
+50
+100
Unit
ps
ps
ps
This derating table is used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates
differ. The delta Rise/Fall Rate is calculated as;
{1/(Slew Rate1)} - {1/(Slew Rate2)}
For example:
If Slew Rate1 is 0.5V/ns and Slew Rate2 is 0.4V/ns, then delta Rise/Fall Rate = - 0.5V/ns.
Using the table given, this would result in the need for an increase in tDS and tDH for 100ps.
24
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
TIMING CHART
Read Operation
tCK
/CLK
tCH
tCL
CLK
tIS
Cmd &
Add.
Valid Data
tDQSCK
DQS
tIH
VREF
tRPST
tRPRE
tQH
tDQSQ
DQ
tAC
Write Operation / tDQSS=max.
/CLK
CLK
tDQSS
tWPST
tDSS
tWPRES
DQS
tDQSL
tWPRE
tDQSH
tDS
tDH
DQ
Write Operation / tDQSS=min.
/CLK
CLK
DQS
tDSH
tDQSS
tWPST
tWPRES
tWPRE
tDQSL
tDS
tDQSH
tDH
DQ
25
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
OPERATIONAL DESCRIPTION
BANK ACTIVATE (ACT)
The DDR SDRAM has four independent banks. Each bank is activated by the ACT command with the bank
addresses (BA0,1). A row is indicated by the row address A12-0. The minimum activation interval between
banks is tRRD.
PRECHARGE (PRE)
The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active, the precharge
all command (PREA,PRE+A10=H) is available to deactivate all banks at the same time. After tRP from the
precharge, an ACT command to the same bank can be issued.
Bank Activation and Precharge All (BL=8, CL=2)
/CLK
CLK
2 ACT command / tRCmin
tRCmin
Command
ACT
ACT READ
tRRD
A0-9,11
Xa
PRE
tRP
tRAS
Xb
ACT
Y
tRCD
Xb
BL/2
A10
Xa
Xb
0
BA0,1
00
01
00
1
Xb
01
DQS
DQ
Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7
Precharge all
A precharge command can be issued after BL/2 time from a read command.
26
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
READ
After tRCD from the bank activation, a READ command can be issued. 1st Output data is available after the
/CAS Latency from the READ, followed by (BL-1) consecutive data. (BL : Burst Length) The start address is
specified by A11,A9-A0(x4)/A9-A0(x8)/A8-A0(x16), and the address sequence of burst data is defined by the
Burst Type. A READ command may be issued to any active bank, so the row precharge time (tRP) can be
hidden during the continuous burst data by interleaving the multiple banks. When A10 is high in READ
command, the auto-precharge (READA) is performed. Any command (READ,WRITE,PRE,ACT) asserted to
the same bank is inhibited till the internal precharge is completed. The internal precharge operation starts at
BL/2 time after READA command. The next ACT command can be issued after (BL/2+tRP) time from the
previous READA.
Multi Bank Interleaving READ (BL=8, CL=2)
/CLK
CLK
Command
ACT
READ ACT
READ PRE
tRCD
A0-9,11
Xa
Y
Xb
Y
A10
Xa
0
Xb
0
0
BA0,1
00
00
10
10
00
DQS
DQ
Qa0 Qa1 Qa2 Qa3
Qa4 Qa5 Qa6 Qa7 Qb0 Qb1
Qb2 Qb3 Qb4 Qb5 Qb7 Qb8
Burst Length
/CAS latency
27
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
READ with Auto-Precharge (BL=8, CL=2,2.5)
0
1
2
3
4
/CLK
CLK
Command
5
6
7
8
9
10
11
12
BL/2 + tRP
ACT
READA
tRCD
BL/2
A0-9,11
Xa
Y
A10
Xa
1
BA0,1
00
00
tRP
DQS
CL=2
DQ
Qa0 Qa1 Qa2 Qa3
Qa4 Qa5 Qa6 Qa7
DQS
CL=2.5
DQ
Qa0 Qa1
Qa2 Qa3
Qa4 Qa5 Qa6 Qa7
Internal Precharge starting Timing
Asserted
Command
For Different Bank
3
4
5
6
7
8
9
10
READ
Legal
Legal
Legal
Legal
Legal
Legal Legal Legal
READA
Legal
Legal
Legal
Legal
Legal
Legal Legal Legal
WRITE(CL=2)
Illegal Illegal Illegal Illegal Illegal Legal Legal Legal
WRITE(CL=2.5)
Illegal Illegal Illegal Illegal Illegal Illegal Legal Legal
WRITEA(CL=2)
Illegal Illegal Illegal Illegal Illegal Legal Legal Legal
WRITEA(CL=2.5) Illegal Illegal Illegal Illegal Illegal Illegal Legal Legal
ACT
Legal
Legal
Legal
Legal
Legal
Legal Legal Legal
PCG
Legal
Legal
Legal
Legal
Legal
Legal Legal Legal
Operating description when new command is asserted.
28
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
WRITE
After tRCD time from the bank activation, a WRITE command can be issued. 1st input data is sampled at the
WRITE command with data strobe input, followed by (BL-1) data being written into RAM.The Burst Length is BL.
The start address is specified by A11,A9-A0(x4)/A9-A0(x8)/A8-A0(x16), and the address sequence of burst data
is defined by the Burst Type. A WRITE command may be applied to any active bank, so the row precharge time
(tRP) can be hidden during the continuous input data by interleaving the multiple banks. The write recovery time
(tWR) is required from the last written data to the next PRE command. When A10 is high in a WRITE command,
the auto-precharge(WRITEA) is performed. Any command (READ,WRITE,PRE,ACT) asserted to the same
bank is inhibited till the internal precharge operation is completed. The next ACT command can be issued after
tDAL from the last input data cycle.
Multi Bank Interleaving WRITE (BL=8)
/CLK
CLK
Command
ACT
A0-9,11
Xa
A10
BA0,1
WRITE
WRITE ACT
tRCD
D
tRCD
D
PRE
PRE
Ya
Xb
Yb
Xa
0
Xb
0
0
0
00
00
10
10
00
10
DQS
DQ
Da0 Da1 Da2 Da3 Da4 Da5
Da6
Da7 Db0
Db1 Db2
Db3
Db4
Db5 Db6 Db7
29
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
WRITE with Auto-Precharge (BL=8)
0
1
2
3
4
5
6
7
8
9
10
11
12
/CLK
CLK
Command
ACT
WRITEA
ACT
BL/2
tRCD
A0-9,11
Xa
A10
BA0,1
tDAL
Y
Xb
Xa
1
Xb
00
00
00
D
DQS
DQ
Da0 Da1
Asserted
Command
Da2 Da3
Da4 Da5
Da6
Da7
For Different Bank
3
4
5
6
READ
Illegal
Illegal
Illegal Illegal
READA
Illegal
Illegal
Illegal Illegal
WRITE
Legal
Legal
Legal
WRITEA
Legal
Legal
ACT
Legal
PCG
Legal
7
8
9
10
Illegal
Legal
Legal
Legal
Illegal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Operating description when new command is asserted.
30
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
BURST INTERRUPTION
[Read Interrupted by Read]
Burst read operation can be interrupted by the new Read command issued to any other bank.
Random column access is allowed. READ to READ interval is 1CLK as the minimum.
Read Interrupted by Read (BL=8, CL=2)
/CLK
CLK
Command
READ READ
READ
READ
A0-9,11
Yi
Yj
Yk
Yl
A10
0
0
0
0
BA0,1
00
00
10
01
DQS
DQ
Qai0 Qai1 Qaj0 Qaj1 Qaj2 Qaj3 Qak0 Qak1 Qak2 Qak3 Qak4 Qak5 Qal0 Qal1 Qal2 Qal3 Qal4 Qal5 Qal6 Qal7
[Read Interrupted by precharge]
Burst read operation can be interrupted by precharge of the same bank. READ to PRE interval is 1 CLK
minimum. The time between PRE command to output disable is equal to the CAS Latency. As a result,
READ to PRE interval determines valid data length to be outputted. The figure below shows the examples of
BL=8.
Read Interrupted by Precharge (BL=8)
/CLK
CLK
Command
READ
PRE
DQS
DQ
Command
CL=2.5
READ
Q0 Q1
Q2
Q3 Q4 Q5
Q0 Q1
Q2
Q3
PRE
DQS
DQ
Command
READ PRE
DQS
DQ
Q0 Q1
31
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
Read Interrupted by Precharge (BL=8)
/CLK
CLK
Command
READ
PRE
DQS
DQ
Command
CL=2.0
Q0 Q1
READ
Q2 Q3
Q4 Q5
PRE
DQS
DQ
Command
Q0 Q1
Q2
Q3
READ PRE
DQS
DQ
Q0 Q1
32
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
[Read Interrupted by Burst Stop]
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval is 1 CLK
minimum. The time between TERM command to output disable is equal to the CAS Latency. As a result, READ
to TERM interval determines valid data length to be outputted. The figure below shows example of BL=8.
Read Interrupted by TERM (BL=8)
/CLK
CLK
Command
READ
TERM
DQS
DQ
Command
CL=2.5
READ
Q0 Q1
Q2 Q3 Q4
Q0 Q1
Q2 Q3
Q5
TERM
DQS
DQ
Command
READ TERM
DQS
DQ
Command
Q0
READ
Q1
TERM
DQS
DQ
Command
CL=2.0
Q0 Q1
READ
Q2 Q3 Q4 Q5
TERM
DQS
DQ
Command
Q0 Q1
Q2 Q3
READ TERM
DQS
DQ
Q0 Q1
33
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
[Read Interrupted by Write with TERM]
Read Interrupted by TERM (BL=8)
/CLK
CLK
Command
CL=2.5
READ
TERM
DQS
Q0 Q1
DQ
Command
CL=2.0
WRITE
READ
TERM
Q2
Q3
D0 D1
D2
D3
D4 D5
D2
D4
D5
D6 D7
WRITE
DQS
DQ
Q0 Q1
Q2
Q3
D0
D1
D3
34
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
[Write interrupted by Write]
Burst write operation can be interrupted by Write to any bank. Random column access is allowed. WRITE
to WRITE interval is 1 CLK minimum.
Write Interrupted by Write (BL=8)
/CLK
CLK
Command
WRITE WRITE
WRITE
WRITE
A0-9,11
Yi
Yj
Yk
Yl
A10
0
0
0
0
BA0,1
00
00
10
00
DQS
DQ
Dai0 Dai1 Daj0
Daj1 Daj2 Daj3 Dak0 Dak1 Dak2 Dak3 Dak4 Dak5 Dal0 Dal1 Dal2 Dal3 Dal4 Dal5 Dal6
Dal7
[Write interrupted by Read]
Burst write operation can be interrupted by read of the same or the other bank. Random column access is
allowed. Internal WRITE to READ command interval(tWTR) is 1 CLK minimum. The input data masked by
DM in the interrupted READ cycle is "don't care". tWTR is referenced from the first positive edge after the last
data input.
Write Interrupted by Read (BL=8, CL=2.5)
/CLK
CLK
WRITE
READ
A0-9,11
Yi
Yj
A10
0
0
BA0,1
00
00
Command
DM
tWTR
QS
DQ
Dai0 Dai1
Qaj0 Qaj1 Qaj2 Qaj3 Qaj4 Qaj5 Qaj6
Qaj7
35
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
[Write interrupted by Precharge]
Burst write operation can be interrupted by precharge of the same or all bank. Random column access is
allowed. tWR is referenced from the first positive CLK edge after the last data input.
Write Interrupted by Precharge (BL=8, CL=2.5)
/CLK
CLK
Command
WRITE
A0-9,11
Yi
A10
0
BA0,1
00
PRE
00
tWR
DM
QS
DQ
Dai0 Dai1
36
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
[Initialize and Mode Register sets]
Initialize and MRS
/CLK
CLK
CKE
Command
NOP
PRE
A0-9,11
1
A10
BA0,1
EMRS
MRS
Code
Code
Code
Code
10
00
PRE
AR
AR
MRS
ACT
Xa
1
Code
Xa
00
Xa
DQS
DQ
tMRD
Extended Mode
Register Set
tMRD
tRP
tRFC
tRFC
tMRD
Mode Register Set,
Reset DLL
[AUTO REFRESH]
Auto-refresh cycle is initiated with a REFA(/CS=/RAS=/CAS=L,/WE=CKE=H) command.
The refresh address is generated internally. 8192 REFA cycles within 64ms refresh
256 Mbits memory cells. The auto-refresh is performed on 4 banks concurrently. Before performing an auto
refresh, all banks must be in the idle state. The minimum internal between auto-refresh is tRFC . No
command is allowed within tRFC time after the REFA command.
Auto-Refresh
/CLK
CLK
/CS
NOP or DESELECT
/RAS
/CAS
/WE
CKE
tRFC
A0-11
BA0,1
Auto Refresh on All Banks
Auto Refresh on All Banks
37
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
[SELF REFRESH]
Self -refresh mode is entered by asserting a REFS command (/CS=/RAS=/CAS=L,/WE=H,CKE=L). The selfrefresh mode is maintained as long as CKE is kept low. During the self-refresh mode, CKE becomes
asynchronous and the only enable input. All other inputs including CLK are disabled and ignored to save the
power consumption. In order to exit the self-refresh mode, the device shall be supplied the stable CLK inputs,
followed by DESEL or NOP command, then asserting CKE for the period longer than tXSNR/tXSRD.
Self-Refresh
/CLK
CLK
Stable CLK
/CS
/RAS
/CAS
/WE
CKE
A0-11
X
Y
BA0,1
X
Y
tXSNR
Self Refresh Entry
tXSRD
Self Refresh Exit
38
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
[Power DOWN]
The purpose of CLK suspend is power down. CKE is synchronous input except during the self-refresh mode.
A commands are ignored. From CKE=H to normal function, DLL recovery time is NOT required when the
stable CLK is supplied during the power down mode.
Power Down by CKE
/CLK
CLK
Standby Power Down
CKE
Command
PRE
NOP
NOP
Valid
tXPNR/tXPRD
Active Power Down
CKE
Command
ACT
NOP
NOP
Valid
[DM CONTROL]
DM is defined as the data mask for write data. During writes, DM masks the input data cycle by cycle. Latency
of DM to write mask is 0.
DM Function(BL=8,CL=2)
/CLK
CLK
Command
READ
WRITE
Don't Care
DM
DQS
DQ
D0 D1
D3 D4
D5 D6
D7
Q0 Q1
Q2 Q3 Q4
Q5
Q6
masked by DM=H
39
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
40
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
41