HOPERF HPTA1000

HPTA1000
High Temperature Pressure Sensor
● 0 to 1MPa pressure range
● high stability
● anti-high-temperature
● RoHS-compatible & Pb-free
● Provide the other gage pressure range
sensor
DESCRIPTION
HPTA1000 is a kind of high temperature MEMS sensor based on SOI semiconductor
materiel . Its operating temperature is -30~180°C. With advanced
beam--diaphragm
structure design and stress equipartition technology adopted, HPTA1000 sensor has the
advantages of high temperature resistance, transient high temperature shock immunity,
high measuring range and high overload which make it ideal for pressure self-control
testing equipments used in aerospace / aviation, energy transportation, oil exploitation,
heat process automation in Chemical industry, metallurgical automation, etc.
HPT series sensors have been widely used for measuring diesel spray pressure in
the self-control testing components of diesel engines in vehicles and vessels. HPT
sensors still can operate normally even though the environment temperature exceeds 180
℃.
HPT sensors are produced first by ion implanting the four piezoresistors into silicon.
The four resistors are connected in a Wheatstone bridge arrangement, whereby two
resistors increase with positive pressure while the other two decrease in resistance. When
pressure is applied to the device and two ports of the resistor bridge are supplied with
power source, the other two ports will output an electric signal which is directly
proportional to pressure. Stress equipartition technology is introduced into the design of
die, making the device more robust against high overload. Furthermore, the resistors are
isolated with insulating medium which guarantees the high steadiness of sensor device.
Part number System
Package
Package:
A: Absolute pressure sensor DIE
HPTA 1000
Pressure type
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Pressure range
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Characteristics
Measurement
media
Non-aggressive fluids and gases
Type
Output
AE2
signal
Pressure
compensated
from
Front/ back
side
Dimensions
Chip size
(mm2)
2.5×2.5
Total height
(mm)
0.9
Glass thickness
(mm)
0.5
Hole diameter
(mm)
0.7
Maximum ratings
Storage temperature
Tst
(C°)
-40--250
Operating temperature
Ta
(C°)
-30--180
Supply voltage (max.)
VDD
(V)
10
Temperature
VDD=5V
characteristics
Temperature coefficients ofthe bridge
resistance
( %/C°)
0.25---0.35
Temperature coefficientsof the
Sensitivity
( %/C°)
- 0.25---- 0.15
Temperature coefficients of the
Zero
( %/C°)
- 0.10---+0.10
Characteristics Ta =25°C VDD=5V
Bridge resistance (min/max)Rs
4.0—6.0
(KΩ)
Offset voltage (min/max)V0
-25---+25
(MV)
Nonlinearity (typ)NL
(%FS)
±0.2
Output span (typ)VSP
(MV)
25------40
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WAFER ELECTRICAL CONNECTIONS
Pad
NO
1
Connection
2
Vc
3
Vout+
4
Vd
5
Vd
Vout-
Chip dimensions:2.5×2.5×0.9mm
This document may contain preliminary information and is subject to
change by Hope Microelectronics without notice. Hope Microelectronics
assumes no responsibility or liability for any use of the information
contained herein. Nothing in this document shall operate as an express
HOPE MICROELECTRONICS CO.,LTD
or implied license or indemnity under the intellectual property rights of
4/F, Block B3, East Industrial Area,
Hope Microelectronics or third parties. The products described in this
Huaqiaocheng, Shenzhen, Guangdong,
document are not intended for use in implantation or other direct life
China
support applications where malfunction may result in the direct physical
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harm or injury to persons. NO WARRANTIES OF ANY KIND,
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
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[email protected]
MECHANTABILITY OR FITNESS FOR A ARTICULAR PURPOSE, ARE
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OFFERED IN THIS DOCUMENT.
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