HYNIX HMP512P7FFP4C-Y5

240pin Registered DDR2 SDRAM DIMMs based on 512 Mb F ver.
This Hynix registered Dual In-Line Memory Module (DIMM) series consists of 512Mb F ver. DDR2 SDRAMs in Fine Ball
Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb F ver. based Registered DDR2 DIMM
series provide a high performance 8 byte interface in 133.35mm width form factor of industry standard. It is suitable
for easy interchange and addition.
ORDERING INFORMATION
Density
Org.
Component Configuration
Ranks
Parity
Support
HMP564P7FFP8C-Y5
512MB
64Mx72
64Mx8(H5PS5182FFP)*9
1
O
HMP512R7FFP4C-E3
1GB
128Mx72
128Mx4(H5PS5142FFP)*18
1
X
HMP512P7FFP4C-Y5
1GB
128Mx72
128Mx4(H5PS5142FFP)*18
1
O
HMP525R7FFP4C-E3
2GB
256Mx72
128Mx4(H5PS5142FFP)*36
2
X
HMP525P7FFP4C-Y5
2GB
256Mx72
128Mx4(H5PS5142FFP)*36
2
O
Part Name
Note:
1. “P” of part number[7th digit] stands for Parity Registered DIMM.
2. “P” of part number[11th digit] stands for Lead free products.
SPEED GRADE & KEY PARAMETERS
E3 (DDR2-400)
C4 (DDR2-533) Y5 (DDR2-667)
S6 (DDR2-800)
S5 (DDR2-800)
Speed@CL3
400
400
400
400
400
Speed@CL4
400
533
533
533
533
Speed@CL5
-
-
667
-
800
Speed@CL6
-
-
-
800
-
CL-tRCD-tRP
3-3-3
4-4-4
5-5-5
6-6-6
5-5-5
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1 / May. 2008
1
1240pin Registered DDR2 SDRAM DIMMs
FEATURES
•
JEDEC standard 1.8V +/- 0.1V Power Supply
•
VDDQ : 1.8V +/- 0.1V
•
All inputs and outputs are compatible with SSTL_1.8 interface
•
4 Bank architecture
•
Posted CAS
•
Programmable CAS Latency 3 , 4 , 5
•
OCD (Off-Chip Driver Impedance Adjustment)
•
ODT (On-Die Termination)
•
Fully differential clock operations (CK & CK)
•
Programmable Burst Length 4 / 8 with both sequential and interleave mode
•
Average Auto Refresh Period 7.8us under TCASE 85℃, 3.9us at 85℃ < TCASE ≤ 95 ℃
•
High Temperature Self-Refresh Entry enable features
•
PASR(Partial Array Self- Refresh)
•
8192 refresh cycles / 64ms
•
Serial presence detect with EEPROM
•
DDR2 SDRAM Package: 60ball FBGA
•
133.35 x 30.00 mm form factor
•
Lead-free Products are RoHS compliant
ADDRESS TABLE
Density
Organization Ranks
SDRAMs
# of
DRAMs
# of row/bank/column Address
Refresh
Method
14(A0~A13)/2(BA0~BA1)/10(A0~A9)
8K / 64ms
512MB
64M x 72
1
64Mb x 8
9
1GB
128M x 72
1
128Mb x 4
18
14(A0~A13)/2(BA0~BA1)/11(A0~A9,A11) 8K / 64ms
2GB
256M x 72
2
128Mb x 4
36
14(A0~A13)/2(BA0~BA1)/11(A0~A9,A11) 8K / 64ms
Rev. 0.1 / May. 2008
2
1240pin Registered DDR2 SDRAM DIMMs
Input/Output Functional Description
Symbol
Type
Polarity
Pin Description
CK0
IN
Positive
Edge
Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.
CK0
IN
Negative
Negative line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.
Edge
CKE[1:0]
IN
Active
High
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low.
By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.
S[1:0]
IN
Active
Low
Enables the associated DDR2 SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored but
previous operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1
ODT[1:0]
IN
Active
High
On-Die Termination signals.
RAS, CAS, WE
IN
Active
Low
When sampled at the positive rising edge of the clock. RAS,CAS and WE(ALONG WITH S) define
the command being entered.
Vref
Supply
Reference voltage for SSTL18 inputs
VDDQ
Supply
Power supplies for the DDR2 SDRAM output buffers to provide improved noise immunity. For all
current DDR2 unbuffered DIMM designs, VDDQ shares the same power plane as VDD pins.
BA[1:0]
IN
-
Selects which DDR2 SDRAM internal bank of four is activated.
During a Bank Activate command cycle, Address input difines the row address(RA0~RA13)
A[9:0],
A10/AP
A[13:11]
IN
-
DQ[63:0],
CB[7:0]
IN
-
DM[8:0]
IN
Active
High
VDD,VSS
Supply
During a Read or Write command cycle, Address input defines the column address when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the column
address, AP is used to invoke autoprecharge operation at the end of the burst read or write
cycle. If AP is high., autoprecharge is selected and BA0-BAn defines the bank to be precharged.
If AP is low, autoprecharge is disabled. During a Precharge command cycle., AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define
which bank to precharge.
Data and Check Bit Input/Output pins.
DM is an input mask signal for write data. Input data is masked when DM is sampled High coincident with that input data during a write access. DM is sampled on both edges of DQS.
Although DM pins are input only, the DM loading matches the DQ and DQS loading.
Power and ground for the DDR2 SDRAM input buffers, and core logic. VDD and VDDQ pins are
tied to VDD/VDDQ planes on these modules.
DQS[17:0]
I/O
Positive
Edge
DQS[17:0]
I/O
Negative
Negative line of the differential data strobe for input and output data
Edge
SA[2:0]
IN
-
These signals are tied at the system planar to either VSS or VDDSPD to configure the serial SPD
EEPROM address range.
SDA
I/O
-
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resister may
be connected from the SDA bus line to VDDSPD on the system planar to act as a pull up.
SCL
IN
-
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected
from SCL to VDDSPD to act as a pull up on the system board.
VDDSPD
Supply
Positive line of the differential data strobe for input and output data
Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power plane.
EEPROM supply is operable from 1.7V to 3.6V.
RESET
IN
The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When
low, all register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will
be set to low level (the PLL will remain synchronized with the input clock)
Par_In
IN
Parity bit for the Address and Control bus(“1”. Odd, “0”.Even)
Err_Out
OUT
TEST
Rev. 0.1 / May. 2008
Parity error found in the Address and Control bus
Used by memory bus analysis tools(unused on memory DIMMs)
3
1240pin Registered DDR2 SDRAM DIMMs
PIN DESCRIPTION
Pin
Pin Description
Pin
CK0
Clock Input,positive line
ODT[1:0]
CK0
Clock input,negative line
VDDQ
CKE0~CKE1 Clock Enable Input
Pin Description
On Die Termination Inputs
DQs Power Supply
DQ0~DQ63 Data Input/Output
RAS
Row Address Strobe
CB0~CB7
Data check bits Input/Output
CAS
Column Address Strobe
DQS(0~8)
Data strobes
WE
Write Enable
DQS(0~8)
Data strobes,negative line
Chip Select Input
DM(0~8),
Data Maskes/Data strobes
DQS(9~17)
Address input
DQS(9~17) Data strobes,negative line
S0,S1
A0~A9,
A11~A13
A10/AP
Address input/Autoprecharge
RFU
Reserved for Future Use
BA0,BA1
SDRAM Bank Address
NC
No Connect
SCL
Serial Presence Detect(SPD) Clock Input
TEST
Memory bus test tool
(Not Connected and Not Usable on DIMMs)
SDA
SPD Data Input/Output
VDD
Core Power
VDDQ
I/O Power
SA0~SA2
E2PROM
Address Inputs
Par_In
Parity bit for the Address and Control bus
VSS
Ground
Err_Out
Parity error found on the Address
VREF
Input/Output Reference
RESET
Reset Enable
CB0~CB7
VDDSPD
SPD Power
Data Check bit Inputs/Outputs
PIN LOCATION
1 pin
121 pin
Rev. 0.1 / May. 2008
Front Side
Back Side
64 pin 65 pin
184 pin 185 pin
120 pin
240 pin
4
1240pin Registered DDR2 SDRAM DIMMs
PIN ASSIGNMENT
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
1
VREF
41
VSS
81
DQ33
121
VSS
161
CB4
201
VSS
2
VSS
42
CB0
82
VSS
122
DQ4
162
CB5
202
DM4/DQS13
3
DQ0
43
CB1
83
DQS4
123
DQ5
163
VSS
203
DQS13
4
DQ1
44
VSS
84
DQS4
124
VSS
164
DM8,DQS17
204
VSS
5
VSS
45
DQS8
85
VSS
125
DM0/DQS9
165
DQS17
205
DQ38
6
DQS0
46
DQS8
86
DQ34
126
DQS9
166
VSS
206
DQ39
7
DQS0
47
VSS
87
DQ35
127
VSS
167
CB6
207
VSS
8
VSS
48
CB2
88
VSS
128
DQ6
168
CB7
208
DQ44
9
DQ2
49
CB3
89
DQ40
129
DQ7
169
VSS
209
DQ45
10
DQ3
50
VSS
90
DQ41
130
VSS
170
VDDQ
210
VSS
11
VSS
51
VDDQ
91
VSS
131
DQ12
171
NC,CKE1
211
DM5/DQS14
12
DQ8
52
CKE0
92
DQS5
132
DQ13
172
VDD
212
DQS14
13
DQ9
53
VDD
93
DQS5
133
VSS
173
A15,NC
213
VSS
14
VSS
54
BA2,NC
94
VSS
134
DM1/DQS10
174
A14,NC
214
DQ46
15
DQS1
55
NC,Err_Out
95
DQ42
135
DQS10
175
VDDQ
215
DQ47
16
DQS1
56
VDDQ
96
DQ43
136
VSS
176
A12
216
VSS
17
VSS
57
A11
97
VSS
137
RFU
177
A9
217
DQ52
18
RESET
58
A7
98
DQ48
138
RFU
178
VDD
218
DQ53
19
NC
59
VDD
99
DQ49
139
VSS
179
A8
219
VSS
20
VSS
60
A5
100
VSS
140
DQ14
180
A6
220
RFU
21
DQ10
61
A4
101
SA2
141
DQ15
181
VDDQ
221
RFU
22
DQ11
62
VDDQ
102
NC(TEST)
142
VSS
182
A3
222
VSS
23
VSS
63
A2
103
VSS
143
DQ20
183
A1
223
DM6/DQS15
24
DQ16
64
VDD
104
DQS6
144
DQ21
184
VDD
224
NC,DQS15
25
DQ17
105
DQS6
145
VSS
26
VSS
65
VSS
106
VSS
146
DM2/DQS11
185
27
DQS2
66
VSS
107
DQ50
147
DQS11
28
DQS2
67
VDD
108
DQ51
148
29
VSS
68
NC,Err_Out
109
VSS
149
30
DQ18
69
VDD
110
DQ56
150
31
DQ19
70
A10/AP
111
DQ57
151
32
VSS
71
BA0
112
VSS
33
DQ24
72
VDDQ
113
DQS7
34
DQ25
73
WE
114
35
VSS
74
CAS
36
DQS3
75
37
DQS3
76
38
VSS
77
39
DQ26
78
40
DQ27
Key
Key
Name
225
VSS
CK0
226
DQ54
186
CK0
227
DQ55
VSS
187
VDD
228
VSS
DQ22
188
A0
229
DQ60
DQ23
189
VDD
230
DQ61
VSS
190
BA1
231
VSS
152
DQ28
191
VDDQ
232
DM7/DQS16
153
DQ29
192
RAS
233
NC,DQS16
DQS7
154
VSS
193
S0
234
VSS
115
VSS
155
DM3/DQS12
194
VDDQ
235
DQ62
VDDQ
116
DQ58
156
DQS12
195
ODT0
236
DQ63
NC, S1
117
DQ59
157
VSS
196
A13,NC
237
VSS
NC, ODT1
118
VSS
158
DQ30
197
VDD
238
VDDSPD
VDDQ
119
SDA
159
DQ31
198
VSS
239
SA0
79
VSS
120
SCL
160
VSS
199
DQ36
240
SA1
80
DQ32
200
DQ37
NC= No Connect, RFU= Reserved for Future Use.
Note:
1. RESET(Pin 18) is connected to both OE of PLL and Reset of register.
2. NC/Err_out (Pin 55) and NC/Par_In(Pin68) are for optional function to check address and command parity.
3. The Test pin(Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules(DIMMs)
Rev. 0.1 / May. 2008
5
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
512MB(64Mbx72) : HMP564P7FFP8C
/RS0
DQS4
/DQS4
DM4,DQS13
/DQS13
DQS0
/DQS0
DM0,DQS9
/DQS9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
NU
/RDQS
/CS
DM
RDQS
I/O 0
I/O 1
I/O 2
DQS /DQS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
D0
I/O
I/O
I/O
I/O
I/O
NU
/RDQS
/CS
DQS /DQS
D4
3
4
5
6
7
DQS5
/DQS5
DM5,DQS14
/DQS14
DQS1
/DQS1
DM1,DQS10
/DQS10
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
NU
/RDQS
/CS
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
D1
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
NU
/RDQS
/CS
/CS
DQS /DQS
D5
3
4
5
6
7
DM
RDQS
I/O 0
I/O 1
I/O 2
DQS /DQS
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
D2
I/O
I/O
I/O
I/O
I/O
NU
/RDQS
/CS
DQS /DQS
D6
3
4
5
6
7
VDD SPD
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
NU
/RDQS
/CS
DM
RDQS
I/O 0
I/O 1
I/O 2
DQS /DQS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D3
DQS8
/DQS8
DM8DQS17
/DQS17
I/O
I/O
I/O
I/O
I/O
Serial PD
VDD /
VDDQ
DQS7
/DQS7
DM7,DQS16
/DQS16
DQS3
/DQS3
DM3,DQS12
/DQS12
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
I/O
I/O
I/O
I/O
I/O
NU
/RDQS
DQS6
/DQS6
DM6,DQS15
/DQS15
DQS2
/DQS2
DM2,DQS11
/DQS11
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DM
RDQS
I/O 0
I/O 1
I/O 2
DQS /DQS
NU
/RDQS
/CS
DO-D8
VREF
DO-D8
VSS
DO-D8
DQS /DQS
Serial PD
D7
3
4
5
6
7
SDA
SCL
SCL
WP
U0
A0
A1
SA0 SA1
SDA
A2
SA2
Notes :
1. Register values are 22 Ohms.
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DM
RDQS
I/O 0
I/O 1
I/O 2
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
R
E
G
I
S
T
E
R
/CS0*
BA0 to BA1
A0 to A13
/RAS
/CAS
CKE0
NU
/RDQS
/CS
DQS /DQS
VSS
VSS
D8
ODT0
PAR_IN
100K ohms
Register
C0
C1
PAR_IN
PPO
/QERR
/Err-Out
The resistors on Par_In, A13, A14, A15, BA2 and
the signal line of Err_Out refer to the section:
“Register Options for Unused Address inputs”
/RS0 to /CS ==> /CS: SDRAMs D0 to D8
RBA0 to RBA1 ==> BA0 to BA1: SDRAMs D0 to D8
/RA0 to RA13 ==> A0 to A13: SDRAMs D0 to D8
/RRAS ==>/RAS: SDRAMs D0 to D8
CK0
/CK0
P
L
L
PCK0 to PCK6, PCK8,PCK9 ==> CK: SDRAMs D0 toD8
OE
/PCK7 ==> /CK: Register
/PCK0 to /PCK6, /PCK8, /PCK9 ==> /CK: SDRAMs D0 toD8
/RCAS ==>/CAS: SDRAMs D0 to D8
PCK7 ==> CK: Register
RCKE0 ==> CKE: SDRAMs D0 to D8
/RWE ==> /WE: SDRAMs D0 to D8
/WE
Signals for Address and Command Parity Function
/RESET
RODT0 ==> ODT0: SDRAMs D0 to D8
/RESET
/RST
PCK7
/PCK7
* : /S0 connects to D/CS and VDD connects to /CSR on register.
Rev. 0.1 / May. 2008
6
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
1GB(64Mbx72) : HMP512R(P)7FFP4C
VSS
/RS0
/ DQS0
DQS0
/ DQS9
DQS9
DQS / DQS /CS
I/O0
I/O1
D0
I/O2
I/O3
DQ0
DQ1
DQ2
DQ3
DM
DQ4
DQ5
DQ6
DQ7
/ DQS1
DQS1
DQS / DQS /CS
I/O0
I/O1
D1
I/O2
I/O3
DM
DQ12
DQ13
DQ14
DQ15
DQS / DQS /CS
I/O0
I/O1
D2
I/O2
I/O3
DQ16
DQ17
DQ18
DQ19
DM
DQ20
DQ21
DQ22
DQ23
/ DQS3
DQS3
DQS / DQS /CS
I/O0
I/O1
D3
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D4
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D5
I/O2
I/O3
DM
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
/ DQS5
DQS5
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQS / DQS /CS
I/O0
I/O1
D6
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D7
I/O2
I/O3
DM
DQ52
DQ53
DQ54
DQ55
/ DQS7
DQS7
DQS / DQS /CS
I/O0
I/O1
D11
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D12
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D13
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D14
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D15
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D16
I/O2
I/O3
DM
DQS / DQS /CS
I/O0
I/O1
D17
I/O2
I/O3
DM
/ DQS16
DQS16
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQS / DQS /CS
I/O0
I/O1
D8
I/O2
I/O3
CB0
CB1
CB2
CB3
R
E
G
I
S
T
E
R
DM
CB4
CB5
CB6
CB7
CK0
/CK0
VDD SPD
Serial
PD
VDD /VDDQ
DO-D17
V REF
DO-D17
VSS
DO-D17
PCK0 to PCK6, PCK8,PCK9 = > CK : SDRAMx D0-D17
/PCK0 to /PCK6, /PCK8,/PCK9 = > /CK : SDRAMx D0-D17
/PCK7 = > /CK: Register
Notes:
1. Resistor values are 22 Ohms +/- 5%.
Signals for Address and Command Parity Function
RBA0 to RBA1 ==> BA0 to BA1: SDRAMs D0 to D17
VSS
/RA0 to RA13 ==> A0 to A13: SDRAMs D0 to D17
VDD
/RCAS ==>/CAS: SDRAMs D0 to D17
OE
/RESET
/RS0 to /CS ==> /CS: SDRAMs D0 to D17
/RRAS ==>/RAS: SDRAMs D0 to D17
P
L
L
PCK7 = > CK: Register
/ DQS17
DQS17
/ DQS8
DQS8
PAR_IN
C0
C1
PAR_IN
Register A
VDD
V DD
PPO
/QERR
C0
C1
PAR_IN
100K ohms
Register B
PPO
/QERR
/Err-Out
RCKE0 ==> CKE: SDRAMs D0 to D17
/WE
/RWE ==> /WE: SDRAMs D0 to D17
ODT0
RODT0 ==> ODT0: SDRAMs D0 to D17
/RESET
DM
/ DQS15
DQS15
/ DQS6
DQS6
CKE0
A2
SA2
/ DQS14
DQS14
DQ40
DQ41
DQ42
DQ43
/RAS
A1
/ DQS13
DQS13
/ DQS4
DQS4
/CAS
A0
SA0 SA1
DQS / DQS /CS
I/O0
I/O1
D10
I/O2
I/O3
SDA
U0
W
P
/ DQS12
DQS12
DQ24
DQ25
DQ26
DQ27
A0 to A13
SDA
SCL
SCL
/ DQS11
DQS11
/ DQS2
DQS2
/CS0*
Serial PD
DM
/ DQS10
DQS10
DQ8
DQ9
DQ10
DQ11
BA0 to BA1
DQS / DQS /CS
I/O0
I/O1
D9
I/O2
I/O3
The resistors on Par_In, A13, A14, A15, BA2 and
the signal line of Err_Out refer to the section:
“Register Options for Unused Address inputs”
/RST
PCK7
/PCK7
* /S0 connects to D/CS of Register1 and /CSR of Register2. /CSR of register and D/CS of register2 connects to VDD.
** /RESET,PCK7 connect to both Registers. Other signals connect to one of two Registers. /S1,CKE1 and ODT1 are NC.
Rev. 0.1 / May. 2008
7
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
2GB(256Mbx72) : HMP525P[R]7FFP4C
VSS
RS0
RS1
DQS0
DQS0
DQS9
DQS9
DQ0
DQ1
DQ2
DQ3
DQS1
DQS1
DQ8
DQ9
DQ10
DQ11
DQS2
DQS2
DQ16
DQ17
DQ18
DQ19
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D0
D18
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D1
D19
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D2
D20
DQS3
DQS3
DQ12
DQ13
DQ14
DQ15
DQS11
DQS11
DQ20
DQ21
DQ22
DQ23
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D9
D27
Serial PD
SCL
SDA
WP A0 A1 A2
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D10
SA0 SA1 SA2
D28
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D11
D29
VDDSPD
SPD
VDD/VDDQ
D0–D35
VREF
D0–D35
VSS
D0–D35
DQS12
DQS12
DQ24
DQ25
DQ26
DQ27
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D3
D21
DQS8
DQS8
DQ28
DQ29
DQ30
DQ30
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D12
D30
DQS17
DQS17
CB0
CB1
CB2
CB3
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D8
D26
CB4
CB5
CB6
CB7
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D17
D35
Signals for Address and Command
Parity Function
Register
Par_In
RS0
RS1
DQS4
DQS4
PARIN
PTYERR
0Ω
Register
100KΩ
DQS13
DQS13
DQ32
DQ33
DQ34
DQ35
DQS5
DQS5
DQ40
DQ41
DQ42
DQ43
DQS6
DQS6
DQ48
DQ49
DQ50
DQ51
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D4
D22
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D5
D23
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D6
D24
DQS7
DQS7
DQ36
DQ37
DQ38
DQ39
DQS14
DQS14
DQ44
DQ45
DQ46
DQ47
DQS15
DQS15
DQ52
DQ53
DQ54
DQ55
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D13
D31
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D14
D32
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D15
PARIN
PTYERR
Err_Out
o ohm resistor on Err_Out is not populated
for non-parity card.
The resistors on Par_In,A13,A14,A15,BA2
and the signal line of Err_Out refer to the
section:
“Register Options for Unused Address
input”
D33
DQS16
DQS16
DQ56
DQ57
DQ58
DQ59
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
S0*
D7
D25
DQ60
DQ61
DQ62
DQ63
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D16
D34
RS0 -> CS: SDRAMs D0-D17
S1*
BA0-BA2***
A0-A15***
RAS
1:2
R
E
G
I
S
T
CAS
WE
CKE0
CKE1
ODT0
ODT1
RESET**
DQ4
DQ5
DQ6
DQ7
DQS10
DQS10
E
R
RST
PCK7**
PCK7**
RS1 -> CS: SDRAMs D18-D35
RBA0-RBA2 -> BA0-BA2: SDRAMs D0-D35
RA0-RA15 -> A0-A15: SDRAMs D0-D35
RRAS -> RAS: SDRAMs D0-D35
CK0
CK0
RESET
P
L
L
OE
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D35
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D35
PCK7 -> CK: Register
PCK7 -> CK: Register
RCAS -> CAS: SDRAMs D0-D35
RWE -> WE: SDRAMs D0-D35
RCKE0 -> CKE0-1: SDRAMs D0-D17
RCKE1 -> CKE0-1: SDRAMs D18-D35
RODT0 -> ODT1: SDRAMs D0-D17
RODT1 -> ODT1: SDRAMs D18-D35
Note:
1. DQ-to-I/O wiring may be changed within a nibble.
2. Unless otherwise noted, resistor values are 22 Ohms ± 5%.
3. RS0 and RS1 alternate between the bottom and surface sides of the DIMM.
*S0 connects to DCS and S1 command to CRS on a pair of Register, S2 connects to DCS and S0 connect to CRS on another pair of Register.
** RESET, PCK7 and PCK7 connect to all Registers. Other signals connect to one pair of four Registers.
*** A14-15, BA2 have the optional pull down resistors (100K ohms), which is not indicated here.
Rev. 0.1 / May. 2008
8
1240pin Registered DDR2 SDRAM DIMMs
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on VDD pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
Storage Humidity(without condensation)
Symbol
Value
Unit
Note
VDD
- 1.0 V ~ 2.3 V
V
1
VDDL
-0.5V ~ 2.3 V
V
1
VDDQ
- 0.5 V ~ 2.3 V
V
1
VIN, VOUT
- 0.5 V ~ 2.3 V
V
1
TSTG
-50 ~ +100
HSTG
5 to 95
1
o
C
%
1
Note :
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con
ditions for extended periods may affect reliablility.
OPERATING CONDITIONS
Parameter
DIMM Operating temperature(ambient)
DIMM Barometric Pressure(operating & storage)
Symbol
TOPR
Rating
0 ~ +55
Units
oC
Notes
PBAR
TCASE
105 to 69
K Pascal
1
0 ~+95
oC
2
DRAM Component Case Temperature Range
Note :
1. Up to 9850 ft.
2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to
tREFI=3.9us. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.
DC OPERATING CONDITIONS (SSTL_1.8)
Parameter
Power Supply Voltage
Symbol
Min
Max
Unit
VDD
1.7
1.9
V
VDDL
1.7
1.9
V
VDDQ
Input Reference Voltage
VREF
EEPROM Supply Voltage
VDDSPD
1.7
0.49 x VDDQ
1.7
VTT
VREF-0.04
1.9
0.51 x VDDQ
3.6
VREF+0.04
II
-2
2
uA
IOZ
-5
5
uA
Termination Voltage
Input leakage current; any input 0V VIN VDD;
all other balls not under test = 0V)
Output leakage current; 0V VOUT VDDQ;
DQ and ODT disabled
Note
V
1
V
2
V
V
3
Note :
1. VDDQ must be less than or equal to VDD.
2. Peak to peak ac noise on VREF may not exeed +/-2% VREF(dc)
3. VTT of transmitting device must track VREF of receiving device.
Rev. 0.1 / May. 2008
9
1240pin Registered DDR2 SDRAM DIMMs
INPUT DC LOGIC LEVEL
Parameter
Symbol
Min
Max
Unit
Input High Voltage
VIH(DC)
VREF + 0.125
VDDQ + 0.3
V
Input Low Voltage
VIL(DC)
-0.30
VREF - 0.125
V
Notes
INPUT AC LOGIC LEVEL
Parameter
DDR2 400/533
Symbol
DDR2 667/800
Min
Max
Min
Max
Notes
Unit
AC Input logic High
VIH(AC)
VREF + 0.250
-
VREF + 0.200
-
V
AC Input logic Low
VIL(AC)
-
VREF - 0.250
-
VREF - 0.200
V
AC INPUT TEST CONDITIONS
Symbol
Condition
Value
Units
Notes
0.5 * VDDQ
V
1
VREF
Input reference voltage
VSWING(MAX)
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
Notes:
1.
Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device
under test.
2.
The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges
and the range from VREF to VIL(ac) max for falling edges as shown in the below figure.
3.
AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions
and VIH(ac) to VIL(ac) on the negative transitions.
VDDQ
VIH(ac) min
VIH(dc) min
VREF
VIL(dc) max
VIL(ac) max
VSWING(MAX)
VSS
delta TF
Falling Slew =
delta TR
VREF - VIL(ac) max
delta TF
Rising Slew =
VIH(ac)min - VREF
delta TR
< Figure : AC Input Test Signal Waveform>
Rev. 0.1 / May. 2008
10
1240pin Registered DDR2 SDRAM DIMMs
Differential Input AC logic Level
Symbol
Parameter
Min.
Max.
Units
Note
VID (ac)
ac differential input voltage
0.5
VDDQ + 0.6
V
1
VIX (ac)
ac differential cross point voltage
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,
LDQS, UDQS and UDQS.
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as
CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to VIH(DC) - VIL(DC).
VDDQ
VTR
Crossing point
VID
VIX or VOX
VCP
VSSQ
< Differential signal levels >
Notes:
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal
(such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).
The minimum value is equal to V IH(AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to
track variations in VDDQ . VIX(AC) indicates the voltage at whitch differential input signals must cross.
DIFFERENTIAL AC OUTPUT PARAMETERS
Symbol
Parameter
Min.
Max.
Units
Note
VOX (ac)
ac differential cross point voltage
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
Note:
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to
track variations in VDDQ . VOX(AC) indicates the voltage at whitch differential output signals must cross.
Rev. 0.1 / May. 2008
11
1240pin Registered DDR2 SDRAM DIMMs
OUTPUT BUFFER LEVELS
OUTPUT AC TEST CONDITIONS
Symbol
Parameter
SSTL_18
Units
Notes
VOTR
Output Timing Measurement Reference Level
0.5 * VDDQ
V
1
Notes:
1. The VDDQ of the device under test is referenced.
OUTPUT DC CURRENT DRIVE
Symbol
Parameter
SSTl_18
Units
Notes
IOH(dc)
Output Minimum Source DC Current
- 13.4
mA
1, 3, 4
IOL(dc)
Output Minimum Sink DC Current
13.4
mA
2, 3, 4
Notes:
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and
VDDQ - 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device
drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an
SSTL_18 receiver.
The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define
a convenient driver current for measurement.
Rev. 0.1 / May. 2008
12
1240pin Registered DDR2 SDRAM DIMMs
PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz )
512MB : HMP564P7FFP8C
Pin
Symbol
Min
Max
Unit
CK0, CK0
CCK
7
11
pF
CKE, ODT
CI1
8
12
pF
CS
CI2
8
12
pF
CI3
8
12
pF
CIO
6
9
pF
Symbol
Min
Max
Unit
CK0, CK0
CCK
7
11
pF
CKE, ODT
CI1
8
12
pF
CS
CI2
10
15
pF
Address, RAS, CAS, WE
CI3
8
12
pF
DQ, DM, DQS, DQS
CIO
6
9
pF
Symbol
Min
Max
Unit
CK0, CK0
CCK
7
11
pF
CKE, ODT
CI1
10
15
pF
CS
CI2
10
15
pF
Address, RAS, CAS, WE
CI3
10
15
pF
DQ, DM, DQS, DQS
CIO
9
15
pF
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
1GB : HMP512R7FFP4C / HMP512P7FFP4C
Pin
2GB : HMP525R7FFP4C / HMP525P7FFP4C
Pin
Note :
1. Pins not under test are tied to GND.
2. These values are guaranteed by design and tested on a sample basis only.
Rev. 0.1 / May. 2008
13
1240pin Registered DDR2 SDRAM DIMMs
IDD SPECIFICATIONS (TCASE : 0 to 95oC)
512MB, 64M x 72 Registered DIMM : HMP564P7FFP8C
Symbol
E3 (400@CL3)
C4 (533@CL4)
Y5 (667@CL5)
S5 (800@CL5)
Unit
IDD0
1280
1325
1325
1370
mA
IDD1
1415
1415
1415
1460
mA
IDD2P
722
722
722
722
mA
IDD2Q
920
920
965
965
mA
IDD2N
965
965
1010
1010
mA
IDD3P-F
920
920
920
920
mA
IDD3P-S
758
758
758
758
mA
IDD3N
1100
1100
1145
1145
mA
IDD4W
1325
1325
1550
1685
mA
IDD4R
1415
1415
1640
1775
mA
IDD5
1595
1595
1640
1685
mA
IDD6
522
522
522
522
mA
IDD7
1955
2045
2135
2225
mA
Notes
1
1GB, 128M x 72 Registered DIMM : HMP512R[P]7FFP4C
Symbol
E3 (400@CL3)
C4 (533@CL4)
Y5 (667@CL5)
S5 (800@CL5)
Unit
IDD0
1910
2000
2000
2090
mA
IDD1
2180
2180
2180
2270
mA
IDD2P
794
794
794
794
mA
IDD2Q
1190
1190
1280
1280
mA
IDD2N
1280
1280
1370
1370
mA
IDD3P-F
1190
1190
1190
1190
mA
IDD3P-S
866
866
866
866
mA
IDD3N
1550
1550
1640
1640
mA
IDD4W
2000
2000
2450
2720
mA
IDD4R
2180
2180
2630
2900
mA
IDD5
2340
2340
2430
2520
mA
IDD6
594
594
594
594
mA
IDD7
3260
3440
3620
3800
mA
Notes
1
Notes :
1. IDD6 current values are guaranteed up to Tcase of 85oC max.
Rev. 0.1 / May. 2008
14
1240pin Registered DDR2 SDRAM DIMMs
2GB, 256M x 72 Registered DIMM : HMP525R[P]7FFP4C
Symbol
E3 (400@CL3)
C4 (533@CL4)
Y5 (667@CL5)
S5 (800@CL5)
Unit
IDD0
2540
2630
2720
2810
mA
IDD1
2810
2810
2900
2990
mA
IDD2P
938
938
938
938
mA
IDD2Q
1730
1730
1910
1910
mA
IDD2N
1910
1910
2090
2090
mA
IDD3P-F
1730
1730
1730
1730
mA
IDD3P-S
1082
1082
1082
1082
mA
IDD3N
2450
2450
2630
2630
mA
IDD4W
2630
2630
3170
3440
mA
IDD4R
2810
2810
3350
3620
mA
IDD5
2970
2970
3150
3240
mA
IDD6
738
738
738
738
mA
IDD7
3890
4070
4340
4520
mA
Rev. 0.1 / May. 2008
Notes
1
15
1240pin Registered DDR2 SDRAM DIMMs
IDD Measurement Conditions
Symbol
Conditions
Units
IDD0
Operating one bank active-precharge current ; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus
inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; tCK =
tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD) ; CKE is HIGH, CS is HIGH between valid
commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W
mA
IDD2P
Precharge power-down current ; All banks idle ; tCK = tCK(IDD) ; CKE is LOW ; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2Q
Precharge quiet standby current ; All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control
and address bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2N
Precharge standby current ; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current ; All banks open; tCK = tCK(IDD); CKE is
LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
IDD3N
Active standby current ; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP =tRP(IDD); CKE is
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
mA
IDD4W
Operating burst write current ; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK
= tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4R
Operating burst read current ; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W
mA
IDD5B
Burst refresh current ; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
mA
IDD6
Self refresh current ; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data
bus inputs are FLOATING. IDD6 current values are guaranted up to Tcase of 85℃ max.
mA
IDD7
Operating bank interleave read current ; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is
HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is
same as IDD4R; - Refer to the following page for detailed timing conditions
mA
Fast PDN Exit MRS(12) = 0
mA
Slow PDN Exit MRS(12) = 1
mA
Notes:
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with
all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as Vin ≤ VILAC(max)
HIGH is defined as Vin ≥ VIHAC(min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and
control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)
for DQ signals not including masks or strobes.
Rev. 0.1 / May. 2008
16
1240pin Registered DDR2 SDRAM DIMMs
Electrical Characteristics & AC Timings
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin
Speed
DDR2-800
DDR2-667
DDR2-533
DDR2-400
Bin(CL-tRCD-tRP)
5-5-5
5-5-5
4-4-4
3-3-3
Parameter
min
min
min
min
CAS Latency
5
5
4
5
ns
tRCD
12.5
15
15
15
ns
tRP
12.5
15
15
15
ns
tRAS
45
45
45
40
ns
tRC
57.25
60
60
55
ns
Unit
AC Timing Parameters by Speed Grade
DDR2-400
Parameter
DDR2-533
Symbol
Unit
Min
Max
Min
Max
Note
Data-Out edge to Clock edge Skew
tAC
-600
+600
-500
500
ps
DQS-Out edge to Clock edge Skew
tDQSCK
-500
+500
-500
450
ns
Clock High Level Width
tCH
0.45
0.55
0.45
0.55
CK
Clock Low Level Width
tCL
0.45
0.55
0.45
0.55
CK
Clock Half Period
tHP
min(tCL,tCH)
-
min
(tCL,tCH)
-
ns
System Clock Cycle Time
tCK
5000
8000
3750
8000
ps
DQ and DM input setup time(differential strobe)
tDS
150
-
100
-
ps
1
DQ and DM input hold time(differential strobe)
tDH
275
-
225
-
ps
1
DQ and DM input setup time(single ended strobe)
tDS1
25
-
-25
-
ps
1
DQ and DM input hold time(single ended strobe)
tDH1
25
-
-25
-
ps
1
Control & Address input Pulse Width for each input
tIPW
0.6
-
0.6
-
tCK
tDIPW
0.35
-
0.35
-
tCK
tHZ
-
tAC max
-
tAC max
ps
DQ and DM input pulse witdth for each input
Data-out high-impedance window from CK, /CK
tLZ(DQS)
tAC min
tAC max
tAC min
tAC max
ps
DQ low-impedance time from CK/CK
tLZ(DQ)
2*tAC min
tAC max
2*tAC min
tAC max
ps
DQS-DQ skew for DQS and associated DQ signals
tDQSQ
-
350
-
300
ps
tQHS
-
450
-
400
ps
tQH
tHP - tQHS
-
tHP - tQHS
-
ps
First DQS latching transition to associated clock edge
tDQSS
-0.25
+ 0.25
-0.25
+ 0.25
tCK
DQS input high pulse width
tDQSH
0.35
-
0.35
-
tCK
DQS input low pulse width
tDQSL
0.35
-
0.35
-
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
tCK
DQS falling edge hold time from CK
tDSH
0.2
-
0.2
-
tCK
tMRD
2
-
2
-
tCK
tWPST
0.4
0.6
0.4
0.6
tCK
DQS low-impedance time from CK/CK
DQ hold skew factor
DQ/DQS output hold time from DQS
Mode register set command cycle time
Write postamble
Rev. 0.1 / May. 2008
17
1240pin Registered DDR2 SDRAM DIMMs
- continued DDR2-400
Parameter
DDR2-533
Symbol
Unit
Min
Max
Min
Note
Max
tWPRE
0.35
-
0.35
-
tCK
Address and control input setup time
tIS
350
-
250
-
ps
Address and control input hold time
tIH
475
-
375
-
ps
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Auto-Refresh to Active/Auto-Refresh command
period
tRFC
105
-
105
-
ns
Row Active to Row Active Delay for 1KB page size
tRRD
7.5
-
7.5
-
ns
Four Activate Window for 1KB page size
tFAW
37.5
-
37.5
-
ns
CAS to CAS command delay
tCCD
2
Write recovery time
tWR
15
Auto Precharge Write Recovery + Precharge Time
tDAL
Write to Read Command Delay
tWTR
Internal read to precharge command delay
tRTP
7.5
7.5
Exit self refresh to a non-read command
tXSNR
tRFC + 10
tRFC + 10
Exit self refresh to a read command
tXSRD
200
-
200
-
tCK
tXP
2
-
2
-
tCK
Exit active power down to read command
tXARD
2
2
tCK
Exit active power down to read command
(Slow exit, Lower power)
tXARDS
6 - AL
6 - AL
tCK
CKE
3
3
tCK
AOND
2
2
2
tAC(min)
tAC(max)+1
tAONPD
tAC(min)+2
2tCK+
tAC(max)+1
tAOFD
2.5
2.5
tAOF
tAC(min)
tAC(max)+0
.6
tAOFPD
tAC(min)+2
2.5tCK+tAC(
max)+1
ODT to power down entry latency
tANPD
3
3
tCK
ODT power down exit latency
tAXPD
8
8
tCK
OCD drive mode output delay
tOIT
0
tDelay
tIS+tCK+tIH
tREFI
-
7.8
-
7.8
us
2
tREFI
-
3.9
-
3.9
us
3
Write preamble
Exit precharge power down to any non-read
command
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Average periodic Refresh Interval
t
t
t
AON
2
tCK
-
15
-
ns
WR+tRP
-
tWR+tRP
-
tCK
10
-
7.5
-
ns
12
ns
ns
2
tCK
tAC(min)
tAC(max)+1
ns
tAC(min)+2
2tCK+tAC(m
ax)+1
ns
2.5
2.5
tCK
tAC(min)
tAC(max)+
0.6
ns
tAC(min)+2
2.5tCK+tAC(
max)+1
ns
0
12
tIS+tCK+tIH
ns
ns
Note :
1. For details and notes, please refer to the relevant HYNIX component datasheet (HY5PS12[4, 8]21CFP).
2. 0°C ≤ TCASE ≤ 85°C
3. 85°C ＜ TCASE ≤ 95°C
Rev. 0.1 / May. 2008
18
1240pin Registered DDR2 SDRAM DIMMs
Parameter
Symbol
DDR2-667
DDR2-800
min
max
min
max
DQ output access time from CK/CK
tAC
-450
+450
-400
+400
DQS output access time from CK/CK
Unit
Note
ps
tDQSCK
-400
+400
-350
+350
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min(tCL,
tCH)
-
min(tCL,
tCH)
-
ps
Clock cycle time, CL=x
tCK
3000
8000
2500
tDS
100
-
50
-
ps
1
tDH
175
-
125
-
ps
1
Control & Address input pulse width for each
input
tIPW
0.6
-
0.6
-
tCK
DQ and DM input pulse width for each input
tDIPW
0.35
-
0.35
-
tCK
Data-out high-impedance time from CK/CK
tHZ
-
tAC max
-
tAC max
ps
DQS low-impedance time from CK/CK
tLZ(DQS)
tAC min
tAC max
tAC min
tAC max
ps
DQ low-impedance time from CK/CK
tLZ(DQ)
2*tAC min
tAC max
2*tAC min
tAC max
ps
DQS-DQ skew for DQS and associated DQ
signals
tDQSQ
-
240
-
200
ps
DQ and DM input setup time
(differential strobe)
DQ and DM input hold time
(differential strobe)
ps
DQ hold skew factor
tQHS
-
340
-
300
ps
DQ/DQS output hold time from DQS
tQH
tHP - tQHS
-
tHP - tQHS
-
ps
First DQS latching transition to associated
clock edge
tDQSS
- 0.25
+ 0.25
- 0.25
+ 0.25
tCK
DQS input high pulse width
tDQSH
0.35
-
0.35
-
tCK
DQS input low pulse width
tDQSL
0.35
-
0.35
-
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
tCK
DQS falling edge hold time from CK
tDSH
0.2
-
0.2
-
tCK
Mode register set command cycle time
tMRD
2
-
2
-
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Write preamble
tWPRE
0.35
-
0.35
-
tCK
tIS
200
-
175
-
ps
Address and control input setup time
Address and control input hold time
tIH
275
-
250
-
ps
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Activate to precharge command
tRAS
45
70000
45
70000
ns
Active to active command period for 1KB
page size products
tRRD
7.5
-
7.5
-
ns
Four Active Window for 1KB page size
products
tFAW
37.5
-
35
-
ns
Rev. 0.1 / May. 2008
19
1240pin Registered DDR2 SDRAM DIMMs
- continued Parameter
Symbol
DDR2-667
min
DDR2-800
max
min
max
CAS to CAS command delay
tCCD
2
Write recovery time
tWR
15
-
15
-
ns
Auto precharge write recovery + precharge
time
tDAL
WR+tRP
-
WR+tRP
-
tCK
Internal write to read command delay
tWTR
7.5
-
7.5
-
ns
Internal read to precharge command delay
tRTP
7.5
Exit self refresh to a non-read command
tXSNR
tRFC + 10
Exit self refresh to a read command
tXSRD
200
-
200
-
tCK
tXP
2
-
2
-
tCK
tXARD
2
2
tCK
tXARDS
7 - AL
8 - AL
tCK
tCKE
3
3
tCK
AOND
2
2
2
2
tCK
tAON
tAC(min)
tAC(max)
+0.7
tAC(min)
tAC(max)
+0.7
ns
tAONPD
tAC(min)+2
2tCK+
tAC(max)+1
tAC(min)
+2
2tCK+
tAC(max)+1
ns
2.5
2.5
2.5
2.5
tCK
AOF
tAC(min)
tAC(max)+
0.6
tAC(min)
tAC(max)
+0.6
ns
ODT turn-off (Power-Down mode)
tAOFPD
tAC(min)
+2
2.5tCK+
tAC(max)+1
tAC(min)
+2
2.5tCK+
tAC(max)+1
ns
ODT to power down entry latency
tANPD
3
3
ODT power down exit latency
tAXPD
8
8
OCD drive mode output delay
tOIT
0
Exit precharge power down to any non-read
command
Exit active power down to read command
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
t
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Average periodic Refresh Interval
t
AOFD
t
2
Unit Note
tCK
7.5
ns
tRFC + 10
12
ns
0
tCK
tCK
12
tIS+tCK
+tIH
ns
ns
tDelay
tIS+tCK+tIH
tREFI
-
7.8
-
7.8
us
2
tREFI
-
3.9
-
3.9
us
3
Note :
1. For details and notes, please refer to the relevant HYNIX component datasheet (HY5PS12[4, 8]21CFP).
2. 0°C ≤ TCASE ≤ 85°C
3. 85°C ＜ TCASE ≤ 95°C
Rev. 0.1 / May. 2008
20
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
64Mx72 (1 rank) - HMP564R[P]7FFP8C
Front
Side
133.35
2.7
. max
Register
4.0±0.1
30.0
(Front)
PLL
Detail-A
Detail-B
1.27±0.10
5.175
63.0
5.0
55.0
5.175
17.80
10.0
Back
3.0
3.0
1.0
Detail of Contacts B
2.50
3.80
2.50 ±
0.20
0.20
Detail of Contacts A
0.8 ± 0.05
1.50 ± 0.10
5.00
Note) All dimensions are typical millimeter scale unless otherwise stated.
Rev. 0.1 / May. 2008
21
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
128Mx72 (1 rank) - HMP512R[P]7FFP4
Front
Side
133.35
4.0 max
Register
4.0±0.1
30.0
PLL
Detail-A
Detail-B
5.175
1.27 ± 0.10
63.0
5.0
55.0
5.175
17.80
10.0
Back
Register
3.0
3.0
1.0
Detail of Contacts B
2.50
3.80
2.50 ±
0.20
0.20
Detail of Contacts A
0.8± 0.05
1.50 ± 0.10
5.00
Note) All dimensions are typical millimeter scale unless otherwise stated.
Rev. 0.1 / May. 2008
22
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
512Mx72 (2 rank)
256Mx72
ranks)- -HMP525P7FFP4C
HYMP151P7EFR4C
Front
2X 3.00MIN
PLL
Register
4X FULL R
4X 4.0 ± 0.1
17.80
30.00
10.00
2X Ø 2.50 ± 0.10
2X 2.3 ± 0.1
5.175
2X R1.00
63.0
DETAIL-A
DETAIL-B
5.0
55.0
128.95
133.35
Register
Back
Detail of Contacts A
Detail of Contacts B
Side
0.8 ± 0.05
3.80
1.0
2.50
3.0 ± 0.15
0.35
0.05
2.50 ± 0.20
4.00max
1.50 ± 0.10
0.3 ± 0.7
5.00
1.27 ± 0.10
Note) All dimensions are typical unless otherwise stated.
Rev. 0.1 / May. 2008
Millimeters
Inches
23
1240pin Registered DDR2 SDRAM DIMMs
REVISION HISTORY
Revision
History
Date
0.1
First Version Release
May. 2008
Rev. 0.1 / May. 2008
Remark
24