HY5DU281622ETP 128M(8Mx16) gDDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Oct. 2005 1 1HY5DU281622ETP Revision History Revision No. History Draft Date 0.1 Defined target spec. July 2003 0.2 Supports Lead free parts for each speed grade Oct. 2003 0.3 166Mhz speed bin delete, AC parameter change (tRC_APCG at 200Mhz) Jan. 2005 1.0 Added Sentence to relate Power Up Sequence Oct. 2005 Rev. 1.0 / Oct. 2005 Remark 2 1HY5DU281622ETP DESCRIPTION The Hynix HY5DU281622ETP is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which require high densities and high bandwidth. The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. FEATURES rising and falling edges of the data strobe • 2.8V +/- 0.1V VDD and VDDQ power supply supports 400/375/350/333/300MHz • 2.5V +/- 5% VDD and VDDQ power supply supports 275/250/200/166MHz • All inputs and outputs are compatible with SSTL_2 interface • JEDEC Standard 400 mil x 875 mil 66 Pin TSOP II, with 0.65mm pin pitch • Fully differential clock inputs (CK, /CK) operation • • All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock • Write mask byte controls by DM (UDM,LDM) • Programmable /CAS Latency 5, 4 and 3 are supported • Programmable Burst Length 2, 4 and 8 with both sequential and interleave mode Double data rate interface • Internal 4 bank operation with single pulsed /RAS • Source synchronous - data transaction aligned to bidirectional data strobe (UDQS,LDQS) • tRAS Lock-Out function are supported • Auto refresh and self refresh are supported • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • 4096 refresh cycles / 32ms • Full strength, Half strength and Weak Impedance driver options controlled by EMRS • Data(DQ) and Write masks(DM) latched on the both ORDERING INFORMATION Part No. HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP-28 HY5DU281622ETP-30 HY5DU281622ETP-33 HY5DU281622ETP-36 HY5DU281622ETP-4 HY5DU281622ETP-5 Power Supply VDD/VDDQ=2.8V VDD/VDDQ=2.5V Clock Frequency Max Data Rate interface 400MHz 375MHz 350MHz 333MHz 300MHz 275MHz 250MHz 200MHz 800Mbps/pin 750Mbps/pin 700Mbps/pin 666Mbps/pin 600Mbps/pin 550Mbps/pin 500Mbps/pin 400Mbps/pin SSTL_2 Package 400 x 875mil 2 66 Pin TSOP II Note) Hynix supports Lead free parts for each speed grade with same specification, except Lead free material. We'll add "P" character after "T" for Pb free product. For example, the part number of 300MHz Lead free Product is HY5DU281622ETP-33. Rev. 1.0 / Oct. 2005 3 1HY5DU281622ETP PIN CONFIGURATION (Top View) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM /WE /CAS /RAS /CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD 400mil X 875mil 66pin TSOP -II 0.65mm pin pitch VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS NC VREF VSS UDM /CK CK CKE NC NC A11 A9 A8 A7 A6 A5 A4 VSS 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 ROW AND COLUMN ADDRESS TABLE Rev. 1.0 / Oct. 2005 ITEMS 8Mx16 Organization 2M x 16 x 4banks Row Address A0 - A11 Column Address A0-A8 Bank Address BA0, BA1 Auto Precharge Flag A10 Refresh 4K 4 1HY5DU281622ETP PIN DESCRIPTION PIN TYPE CK, /CK Input Clock: CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK (both directions of crossing). CKE Input Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF REFRESH entry and exit. CKE is asynchronous for output disable. CKE must be maintained high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after Vdd is applied. /CS Input Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All commands are masked when CS is registered high. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRECHARGE command is being applied. A0 ~ A11 Input Address Inputs: Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 is sampled during a precharge command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET command (MRS or EMRS). /RAS, /CAS, /WE Input Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being entered. UDM, LDM Input Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. LDM corresponds to the data on DQ0-Q7; UDM corresponds to the data on DQ8-Q15 UDQS, LDQS I/O Data Strobe: Output with read data, input with write data. Edge aligned with read data, centered in write data. Used to capture write data. LDQS corresponds to the data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15 DQ0 ~ DQ15 I/O Data input / output pin : Data Bus VDD/VSS Supply Power supply for internal circuits and input buffers. VDDQ/VSSQ Supply Power supply for output buffers for noise immunity. VREF Supply Reference voltage for inputs for SSTL interface. NC NC Rev. 1.0 / Oct. 2005 DESCRIPTION No connection. 5 1HY5DU281622ETP FUNCTIONAL BLOCK DIAGRAM 4Banks x 2Mbit x 16 I/O Double Data Rate Synchronous DRAM 16 Input Buffer Write Data Register 2-bit Prefetch Unit 32 CLK Bank Control 2Mx16/Bank0 2Mx16/Bank1 /CS /RAS Command Decoder 2Mx16/Bank2 32 /CAS 16 Output Buffer Sense AMP CKE 2-bit Prefetch Unit /CLK DS DQ[0:15] 2Mx16/Bank3 /WE LDM UDM Mode Register Row Decoder Column Decoder LDQS, UDQS A0~A11 CLK_DLL Address Buffer BA0, BA1 Column Address Counter LDQS UDQS CLK /CLK Data Strobe Transmitter Data Strobe Receiver DLL Block Mode Register Rev. 1.0 / Oct. 2005 6 1HY5DU281622ETP SIMPLIFIED COMMAND TRUTH TABLE A10/ AP Command CKEn-1 CKEn CS RAS CAS WE Extended Mode Register Set H X L L L L OP code 1,2 Mode Register Set H X L L L L OP code 1,2 H X H X X X L H H H X 1 H X L L H H H X L H L H CA H X L H L L CA H X L L H L X Read Burst Stop H X L H H L X 1 Auto Refresh H H L L L H X 1 Entry H L L L L H Exit L H H X X X L H H H Entry H L H X X X L H H H H X X X L H H H 1 H X X X 1 L V V V Device Deselect No Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Self Refresh Precharge Power Down Mode Active Power Down Mode Exit L H Entry H L Exit L H X ADDR RA BA V L H L H V V Note 1 1 1,3 1 1,4 H X 1,5 L V 1 1 X 1 1 X X 1 1 1 1 ( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation ) Note : 1. UDM, LDM states are Don’t Care. Refer to below Write Mask Truth Table.(note 6) 2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS. Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from Prechagre command. 3. If a Read with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented to activate bank until CK(n+BL/2+tRP). 4. If a Write with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented to activate bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time(tWR) is needed to guarantee that the last data have been completely written. 5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged. 6. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of VIHmin ~ VILmax Rev. 1.0 / Oct. 2005 7 1HY5DU281622ETP WRITE MASK TRUTH TABLE CKEn-1 CKEn /CS, /RAS, /CAS, /WE DM Data Write H X X L X 1,2,3 Data-In Mask H X X H X 1,2,3 Function ADDR A8/ AP BA Note Note : 1. Write Mask command masks burst write data with reference to UDQS/LDQS and it is not related with read data. 2. LDM corresponds to the data on DQ0-Q7 and UDM corresponds to the data on DQ8-Q15 3. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of VIHmin ~ VILmax Rev. 1.0 / Oct. 2005 8 1HY5DU281622ETP OPERATION COMMAND TRUTH TABLE - I Current State IDLE ROW ACTIVE READ WRITE /CS /RAS /CAS /WE Address Command Action H X X X X DSEL NOP or power down3 L H H H X NOP NOP or power down3 L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4 L L H H BA, RA ACT Row Activation L L H L BA, AP PRE/PALL NOP L L L H X AREF/SREF Auto Refresh or Self Refresh5 L L L L OPCODE MRS Mode Register Set H X X X X DSEL NOP L H H H X NOP NOP L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP Begin read : optional AP6 L H L L BA, CA, AP WRITE/WRITEAP Begin write : optional AP6 L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Precharge7 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST Terminate burst L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Term burst, precharge L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8 L H L L BA, CA, AP WRITE/WRITEAP Term burst, new write:optional AP Rev. 1.0 / Oct. 2005 9 1HY5DU281622ETP OPERATION COMMAND TRUTH TABLE - II Current State WRITE READ WITH AUTOPRECHARGE WRITE AUTOPRECHARGE PRECHARGE /CS /RAS /CAS /WE Address Command Action L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Term burst, precharge L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST ILLEGAL L H L H BA, CA, AP READ/READAP ILLEGAL10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST ILLEGAL L H L H BA, CA, AP READ/READAP ILLEGAL10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP-Enter IDLE after tRP L H H H X NOP NOP-Enter IDLE after tRP L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL NOP-Enter IDLE after tRP L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 Rev. 1.0 / Oct. 2005 10 1HY5DU281622ETP OPERATION COMMAND TRUTH TABLE - III Current State /CS /RAS /CAS /WE Address Command Action H X X X X DSEL NOP - Enter ROW ACT after tRCD L H H H X NOP NOP - Enter ROW ACT after tRCD L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,9,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter ROW ACT after tWR L H H H X NOP NOP - Enter ROW ACT after tWR L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter precharge after tDPL L H H H X NOP NOP - Enter precharge after tDPL L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,8,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter IDLE after tRC L H H H X NOP NOP - Enter IDLE after tRC L H H L X BST ILLEGAL11 L H L H BA, CA, AP READ/READAP ILLEGAL11 ROW ACTIVATING WRITE RECOVERING WRITE RECOVERING WITH AUTOPRECHARGE REFRESHING Rev. 1.0 / Oct. 2005 11 1HY5DU281622ETP OPERATION COMMAND TRUTH TABLE - IV Current State WRITE MODE REGISTER ACCESSING /CS /RAS /CAS /WE Address Command Action L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11 L L H H BA, RA ACT ILLEGAL11 L L H L BA, AP PRE/PALL ILLEGAL11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter IDLE after tMRD L H H H X NOP NOP - Enter IDLE after tMRD L H H L X BST ILLEGAL11 L H L H BA, CA, AP READ/READAP ILLEGAL11 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11 L L H H BA, RA ACT ILLEGAL11 L L H L BA, AP PRE/PALL ILLEGAL11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 Note : 1. H - Logic High Level, L - Logic Low Level, X - Don’t Care, V - Valid Data Input, BA - Bank Address, AP - AutoPrecharge Address, CA - Column Address, RA - Row Address, NOP - NO Operation.(see note 12) 2. All entries assume that CKE was active(high level) during the preceding clock cycle. 3. If both banks are idle and CKE is inactive(low level), then in power down mode. 4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of that bank. 5. If both banks are idle and CKE is inactive(low level), then self refresh mode. 6. Illegal if tRCD is not met. 7. Illegal if tRAS is not met. 8. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 9. Illegal if tRRD is not met. 10. Illegal for single bank, but legal for other banks in multi-bank devices. 11. Illegal for all banks. 12. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of VIHmin ~ VILmax Rev. 1.0 / Oct. 2005 12 1HY5DU281622ETP CKE FUNCTION TRUTH TABLE Current State SELF REFRESH1 POWER DOWN2 ALL BANKS IDLE4 ANY STATE OTHER THAN ABOVE CKEn1 CKEn /CS /RAS /CAS /WE /ADD Action H X X X X X X INVALID L H H X X X X Exit self refresh, enter idle after tSREX L H L H H H X Exit self refresh, enter idle after tSREX L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP, continue self refresh H X X X X X X INVALID L H H X X X X Exit power down, enter idle L H L H H H X Exit power down, enter idle L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP, continue power down mode H H X X X X X See operation command truth table H L L L L H X Enter self refresh H L H X X X X Exit power down H L L H H H X Exit power down H L L H H L X ILLEGAL H L L H L X X ILLEGAL H L L L H X X ILLEGAL H L L L L L X ILLEGAL L L X X X X X NOP H H X X X X X See operation command truth table H L X X X X X ILLEGAL5 L H X X X X X INVALID L L X X X X X INVALID Note : When CKE=L, all DQ and UDQS/LDQS should be in Hi-Z state. 1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command. 2. All commands can be stored after 2 clocks from low to high transition of CKE. 3. Illegal, if CK is suspended or stopped during the power down mode. 4. Self refresh can be asserted only from the all banks idle state. 5. Disabling CK may cause malfunction of any banks which are in active state. Rev. 1.0 / Oct. 2005 13 1HY5DU281622ETP SIMPLIFIED STATE DIAGRAM MRS MODE REGISTER SET SREF SELF REFRESH IDLE SREX PDEN PDEX AREF ACT POWER DOWN POWER DOWN AUTO REFRESH PDEN BST PDEX BANK ACTIVE READ WRITE READ WRITE WRITEAP WRITE WITH AUTOPRECHARGE PRE(PALL) READAP READ READAP WITH AUTOPRECHARGE WRITEAP READ WRITE PRE(PALL) PRE(PALL) PRECHARGE POWER-UP Command Input Automatic Sequence POWER APPLIED Rev. 1.0 / Oct. 2005 14 1HY5DU281622ETP POWER-UP SEQUENCE AND DEVICE INITIALIZATION DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Power must first be applied to VDD and VDDQ simultaneously, and then to VREF (and to the system VTT). VTT must be applied after VDDQ to avoid device latch-up, which may cause permanent damage to the device. VREF can be applied any time after VDDQ but is expected to be nominally coincident with VTT. Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal operation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200µs delay prior to applying an executable command. Once the 200µs delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Register set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state. Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command for the Mode Register, with the reset DLL bit deactivated low (i.e. to program operating parameters without resetting the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation. 1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVCMOS low state. (All the other input pins may be undefined.) No power sequencing is specified during power up or power down given the following cirteria : • VDD and VDDQ are driven from a single power converter output. • VTT is limited to 1.35V. • VREF tracks VDDQ/2. • If the above criteria cannot be met by the system design, then the following sequencing and voltage relationship must be adhered to during power up : Voltage description Sequencing Voltage relationship to avoid latch-up VDDQ After or with VDD < VDD + 0.3V VTT After or with VDDQ < VDDQ + 0.3V VREF After or with VDDQ < VDDQ + 0.3V 2. Start clock and maintain stable clock for a minimum of 200µsec. 3. After stable power and clock, apply NOP or DESELECT conditionS and take CKE high. 4. Following the NOP command, a PRECHARGE ALL command should be applied 5. Issue Extended Mode Register Set (EMRS) to enable DLL. 6. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200 cycles(tXSRD) of clock are required for locking DLL) Rev. 1.0 / Oct. 2005 15 1HY5DU281622ETP 7. Issue Precharge commands for all banks of the device. 8. Issue 2 or more Auto Refresh commands. 9. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low. Power-Up Sequence VDD VDDQ tVTD VTT VREF /CLK CLK tIS tIH CKE LVCMOS Low Level CMD NOP PRE EMRS MRS ADDR CODE A10 BA0, BA1 NOP PRE MRS ACT RD CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE Non-Read Command READ AREF DM DQS DQ'S T=200usec tRP tMRD tMRD tRP tRFC tMRD tXSRD* Power UP VDD and CK stable Precharge All EMRS Set MRS Set Reset DLL (with A8=H) Precharge All 2 or more Auto Refresh MRS Set (with A8=L) * 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command Note) 1. VTT is not applied directly to the device; however, tVTD should be greater than or equal to zero to avoid device latch-up. VDDQ, VTT and VREF must be equal to or less than VDD+0.3V. Alternatively, VTT may be 1.35V maximum during power up, even if VDD/VDDQ are 0V. Once initialized, including self refresh mode, VREF must always be powered within specified range. 2. The Power Voltage ramp time between initial VDD and VDDmin must be no less than 3ms. 3. The Initial VDD must be maintained under 100mV. Rev. 1.0 / Oct. 2005 16 1HY5DU281622ETP MODE REGISTER SET (MRS) The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length, burst type, test mode, DLL reset. The mode register is program via MRS command. This command is issued by the low signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to write the data in mode register. During the the MRS cycle, any command cannot be issued. Once mode register field is determined, the information will be held until resetted by another MRS command. BA1 BA0 0 0 A11 A10 RFU* A9 A8 A7 DR TM A6 A5 A4 CAS Latency BA0 MRS Type A7 Test Mode 0 MRS 0 Normal 1 EMRS 1 Vendor test mode A3 A2 BT A1 A0 Burst Length Burst Length A2 A1 A8 DLL Reset 0 No 0 0 1 Yes 0 A0 Sequential Interleave 0 Reserved Reserved 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 Reserved Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved Reserved 1 1 1 Reserved Reserved A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 Reserved 0 1 0 Reserved 0 1 1 3 1 0 0 4 1 0 1 5 A3 Burst Type 1 1 0 Reserved 0 Sequential 1 1 1 Reserved 1 Interleave * All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage. And, if MRS/EMRS are programmed with ‘Reserved’ code, it could be the cause of mal-function. Rev. 1.0 / Oct. 2005 17 1HY5DU281622ETP BURST DEFINITION Burst Length Starting Address (A2,A1,A0) Sequential Interleave XX0 0, 1 0, 1 XX1 1, 0 1, 0 X00 0, 1, 2, 3 0, 1, 2, 3 X01 1, 2, 3, 0 1, 0, 3, 2 X10 2, 3, 0, 1 2, 3, 0, 1 X11 3, 0, 1, 2 3, 2, 1, 0 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6 010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5 011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2 110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1 111 0, 1, 2, 3, 4, 5, 6, 7 7, 6, 5, 4, 3, 2, 1, 0 2 4 8 BURST LENGTH & TYPE Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst length determines the maximum number of column locations that can be accessed for a given Read or Write command. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst length is set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both Read and Write bursts. Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Burst Definitionon Table CAS LATENCY The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the Rev. 1.0 / Oct. 2005 18 1HY5DU281622ETP availability of the first burst of output data. The latency can be programmed 3 or 4 clocks. If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident with clock edge n + m. Reserved states should not be used as unknown operation or incompatibility with future versions may result. DLL RESET The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally applied clock before an any command can be issued. OUTPUT DRIVER IMPEDANCE CONTROL This device supports both Half strength driver and Matched impedance driver, intended for lighter load and/or point-topoint environments. Half strength driver is to define about 50% of Full drive strength which is specified to be SSTL_2, Class II, and Matched impedance driver, about 30% of Full drive strength. Rev. 1.0 / Oct. 2005 19 1HY5DU281622ETP EXTENDED MODE REGISTER SET (EMRS) The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional functions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits shown below. The Extended Mode Register is programmed via the Mode Register Set command ( BA0=1 and BA1=0) and will retain the stored information until it is programmed again or the device loses power. The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent operation. Violating either of these requirements will result in unspecified operation. BA1 BA0 0 1 A11 A10 A9 RFU* BA0 MRS Type 0 MRS 1 EMRS A8 A7 A6 A5 A4 DS A3 RFU* A2 A1 A0 DS DLL A0 DLL enable 0 Enable 1 Diable A6 A1 Output Driver Impedance Control 0 0 Full 0 1 Half (60%) 1 0 Reserved 1 1 Weak (33%) * All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage. Rev. 1.0 / Oct. 2005 20 1HY5DU281622ETP ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 oC Storage Temperature TSTG -55 ~ 125 o VIN, VOUT -0.5 ~ 3.6 V Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS C VDD -0.5 ~ 3.6 V VDDQ -0.5 ~ 3.6 V Output Short Circuit Current IOS 50 mA Power Dissipation PD 2 W TSOLDER 260 ⋅ 10 Voltage on VDDQ relative to VSS Soldering Temperature ⋅ Time oC ⋅ sec Note : Operation at above absolute maximum rating can adversely affect device reliability DC OPERATING CONDITIONS Parameter Power Supply Voltage (TA=0 to 70oC, Voltage referenced to VSS = 0V) Symbol Min Typ Max Unit Note VDD 2.375 2.5 2.625 V 1,4 VDDQ 2.375 2.5 2.625 V 1,4 VDD 2.7 2.8 2.9 V 1,5 1,5 VDDQ 2.7 2.8 2.9 V Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V Input Low Voltage VIL -0.3 - VREF - 0.15 V Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V 3 Reference Voltage VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V 2 Note : 1. VDDQ must not exceed the level of VDD. 2. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on VREF may not exceed ± 2% of the DC value. 3. VTT is expected to be set equal to VREF, and Vtt of the transmitting device must track VREF of the receiving device. 4. Supports 275/ 250/ 200/166Mhz 5. Supports 400/375/350/333/300Mhz DC CHARACTERISTICS I Parameter Input Leakage Current (TA=0 to 70oC, Voltage referenced to VSS = 0V) Symbol Min Max Unit Note ILI -5 5 uA 1 Output Leakage Current ILO -5 5 uA 2 Output High Voltage VOH VTT + 0.76 - V IOH = -15.2mA,2 Output Low Voltage VOL - VTT - 0.76 V IOL = +15.2mA,2 Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to 2.625V, It means, output logic high voltage and low voltage is depend on output channel conditions. Rev. 1.0 / Oct. 2005 21 1HY5DU281622ETP DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V) Speed Parameter Symbol Test Condition Unit Note 190 mA 1 1 25 26 28 30 33 230 220 210 200 Operating Current IDD0 One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current IDD1 Burst length=4, One bank active tRC ≥ tRC(min), IOL=0mA 230 220 210 200 190 mA Precharge Standby Current in Power Down Mode IDD2P CKE ≤ VIL(max), tCK=min 40 40 40 40 40 mA Precharge Standby Current in Non Power Down Mode IDD2N CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = min, Input signals are changed one time during 2clks 150 140 130 120 110 mA Active Standby Current in Power Down Mode IDD3P CKE ≤ VIL(max), tCK=min 40 40 40 40 40 mA Active Standby Current in Non Power Down Mode IDD3N CKE ≥ VIH(min), /CS ≥ VIH(min), tCK=min, Input signals are changed one time during 2clks 190 180 170 160 150 mA Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 380 360 340 320 300 mA 1 Auto Refresh Current IDD5 tRC ≥ tRFC(min), All banks active 380 360 340 320 300 mA 1,2 Self Refresh Current IDD6 CKE ≤ 0.2V 4 4 4 4 4 mA Operating Current Four Bank Operation IDD7 Four bank interleaving with BL=4, Refer to the following page for detailed test condition 530 510 490 470 450 mA Note : 1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open. 2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS. Rev. 1.0 / Oct. 2005 22 1HY5DU281622ETP DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V) Speed Parameter Symbol Test Condition Unit Note 160 mA 1 1 36 4 5 180 170 Operating Current IDD0 One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current IDD1 Burst length=2, One bank active tRC ≥ tRC(min), IOL=0mA 180 170 160 mA Precharge Standby Current in Power Down Mode IDD2P CKE ≤ VIL(max), tCK=min 40 40 40 mA Precharge Standby Current in Non Power Down Mode IDD2N CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = min, Input signals are changed one time during 2clks 100 90 80 mA Active Standby Current in Power Down Mode IDD3P CKE ≤ VIL(max), tCK=min 40 40 40 mA Active Standby Current in Non Power Down Mode IDD3N CKE ≥ VIH(min), /CS ≥ VIH(min), tCK=min, Input signals are changed one time during 2clks 140 130 120 mA Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 280 260 240 mA 1 Auto Refresh Current IDD5 tRC ≥ tRFC(min), All banks active 280 260 240 mA 1,2 Self Refresh Current IDD6 CKE ≤ 0.2V 4 4 4 mA Operating Current - Four Bank Operation IDD7 Four bank interleaving with BL=4, Refer to the following page for detailed test condition 430 410 390 mA Note : 1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open. 2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS. Rev. 1.0 / Oct. 2005 23 1HY5DU281622ETP AC OPERATING CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Symbol Min Max Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.45 Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) Input Differential Voltage, CK and /CK inputs VID(AC) Input Crossing Point Voltage, CK and /CK inputs VIX(AC) Unit Note V VREF - 0.45 V 0.7 VDDQ + 0.6 V 1 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 Note : 1. VID is the magnitude of the difference between the input level on CK and the input on /CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Value Unit Reference Voltage VDDQ x 0.5 V Termination Voltage VDDQ x 0.5 V AC Input High Level Voltage (VIH, min) VREF + 0.45 V AC Input Low Level Voltage (VIL, max) VREF - 0.45 V Input Timing Measurement Reference Level Voltage VREF V Output Timing Measurement Reference Level Voltage VTT V Input Signal maximum peak swing 1.5 V Input minimum Signal Slew Rate 1 V/ns Termination Resistor (RT) 50 Ω Series Resistor (RS) 25 Ω Output Load Capacitance for Access Time Measurement (CL) 30 pF Rev. 1.0 / Oct. 2005 24 1HY5DU281622ETP AC Overshoot/Undershoot specifications for Address and Command pins Parameter 200MHz Specifications Maximum peak amplitude allowwed for overshoot 1.5 V Maximum peak amplitude allowwed for undershoot 1.5 V The area between the overshoot signal and VDD must be less than or equal to(See below Fig) 4.5 V-nS The area between the overshoot signal and GND must be less than or equal to(See below Fig) 4.5 V-nS Max. amplitude=1.5V +5 +4 +3 VDD Volts +2 (V) +1 Ground 0 -1 -2 Max. area=4.5V-ns -3 0 1 2 3 4 5 6 AC Overshoot/Undershoot specifications for Data, Strobe and Mask Pins Time(ns) Parameter 200MHz Specifications Maximum peak amplitude allowwed for overshoot 1.2 V Maximum peak amplitude allowwed for undershoot 1.2 V The area between the overshoot signal and VDD must be less than or equal to(See below Fig) 2.4 V-nS The area between the overshoot signal and GND must be less than or equal to(See below Fig) 2.4 V-nS Max. amplitude=1.2V +5 +4 +3 VDD Volts +2 (V) +1 Ground 0 -1 -2 Max. area=2.4V-ns -3 0 1 2 3 4 5 6 Time(ns) Rev. 1.0 / Oct. 2005 25 1HY5DU281622ETP AC CHARACTERISTICS - I (AC operating conditions unless otherwise noted) Parameter Symbol 25 26 28 Unit Min Max Min Max Min Max tRC 22 - 21 - 20 - tRC_APCG 24 - 23 - 22 - Auto Refresh Row Cycle Time tRFC 26 - 25 - 24 - CK Row Active Time tRAS 16 100K 15 100K 14 100K CK Row Address to Column Address Delay for Read tRCDRD 6 - 6 - 6 - CK Row Address to Column Address Delay for Write tRCDWR 4 - 4 - 4 - CK Row Active to Row Active Delay tRRD 4 - 4 - 4 - CK Column Address to Column Address Delay tCCD 2 - 2 - 2 - CK Row Precharge Time tRP 6 - 6 - 6 - CK Write Recovery Time tWR 4 - 4 - 4 - CK Last Data-In to Read Command tDRL 2 - 2 - 2 - CK Auto Precharge Write Recovery + Precharge Time tDAL 10 - 10 - 10 - CK 2.5 6 2.6 6 - - - - - - 2.8 6 Row Cycle Time(Manual Precharge) Row Cycle Time(Auto Precharge) System Clock Cycle Time CL=5 CL=4 tCK Note CK ns Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.55 0.55 -0.6 0.6 -0.6 0.6 ns DQS-Out edge to Clock edge Skew tDQSCK -0.55 0.55 -0.6 0.6 -0.6 0.6 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.35 - 0.35 - 0.35 ns Data-Out hold time from DQS tQH tHPmin -tQHS - tHPmin -tQHS - tHPmin -tQHS - ns 1,6 Clock Half Period tHP tCH/L min - tCH/L min - tCH/L min - ns 1,5 tQHS - 0.35 - 0.35 - 0.35 ns 6 Input Setup Time tIS 0.75 - 0.75 - 0.75 - ns 2 Input Hold Time tIH 0.75 - 0.75 - 0.75 - ns 2 Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 CK Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 CK Clock to First Rising edge of DQS-In tDQSS 0.85 1.15 0.85 1.15 0.85 1.15 CK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.35 - 0.35 - 0.35 - ns 3 Data-In Hold Time to DQS-In (DQ & DM) tDH 0.35 - 0.35 - 0.35 - ns 3 Data Hold Skew Factor Rev. 1.0 / Oct. 2005 26 1HY5DU281622ETP Parameter Symbol 25 26 28 Unit Min Max Min Max Min Max DQS falling edge to CK setup time tDSS 3.0 - 3.0 - 3.0 - CK DQS falling edge hold time from CK tDSH 3.0 - 3.0 - 3.0 - CK Write DQS Preamble Setup Time tWPRES 0 - 0 - 0 - ns Write DQS Preamble Hold Time tWPREH 0.35 - 0.35 - 0.35 - CK Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 CK Mode Register Set Delay tMRD 10 - 10 - 10 - ns Exit Self Refresh to Any Execute Command tXSC 200 - 200 - 200 - CK Power Down Exit Time tPDEX 2tCK + tIS - 2tCK + tIS - 2tCK + tIS - CK Average Periodic Refresh Interval tREFI - 7.8 - 7.8 - 7.8 us Note 4 Note : 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. 2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE. 3. Data latched at both rising and falling edges of Data Strobes(UDQS,LDQS) : DQ, LDM,UDM. 4. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. 5. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 6. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. 7. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. Rev. 1.0 / Oct. 2005 27 1HY5DU281622ETP AC CHARACTERISTICS - I (AC operating conditions unless otherwise noted) Parameter Symbol 30 33 36 Unit Note Min Max Min Max Min Max tRC 19 - 18 - 16 - tRC_APCG 21 - 20 - 18 - Auto Refresh Row Cycle Time tRFC 23 - 22 - 20 - CK Row Active Time tRAS 13 100K 12 100K 11 100K CK Row Address to Column Address Delay for Read tRCDRD 6 - 6 - 5 - CK Row Address to Column Address Delay for Write tRCDWR 4 - 4 - 3 - CK Row Active to Row Active Delay tRRD 4 - 4 - 3 - CK Column Address to Column Address Delay tCCD 2 - 1 - 1 - CK Row Precharge Time tRP 6 - 6 - 5 - CK Write Recovery Time tWR 4 - 4 - 3 - CK Last Data-In to Read Command tDRL 2 - 2 - 2 - CK Auto Precharge Write Recovery + Precharge Time tDAL 10 - 10 - 8 - CK System Clock Cycle Time tCK 3 6 3.3 6 3.6 10 ns Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.6 0.6 -0.6 0.6 -0.6 0.6 ns DQS-Out edge to Clock edge Skew tDQSCK -0.6 0.6 -0.6 0.6 -0.6 0.6 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.35 - 0.35 - 0.35 ns Data-Out hold time from DQS tQH tHPmin -tQHS - tHPmin -tQHS - tHPmin -tQHS - ns 1,6 Clock Half Period tHP tCH/L min - tCH/L min - tCH/L min - ns 1,5 tQHS - 0.35 - 0.35 - 0.4 ns 6 Input Setup Time tIS 0.75 - 0.75 - 0.75 - ns 2 Input Hold Time tIH 0.75 - 0.75 - 0.75 - ns 2 Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 CK Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 CK Clock to First Rising edge of DQS-In tDQSS 0.85 1.15 0.85 1.15 0.85 1.15 CK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.35 - 0.35 - 0.4 - ns 3 Data-In Hold Time to DQS-In (DQ & DM) tDH 0.35 - 0.35 - 0.4 - ns 3 DQS falling edge to CK setup time tDSS 0.3 - 0.3 - 0.3 - CK DQS falling edge hold time from CK tDSH 0.3 - 0.3 - 0.3 - CK Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 CK Row Cycle Time(Manual Precharge) Row Cycle Time(Auto Precharge) CL=4 Data Hold Skew Factor Rev. 1.0 / Oct. 2005 CK 28 1HY5DU281622ETP Parameter Symbol 30 33 36 Unit Min Max Min Max Min Max tRPST 0.4 0.6 0.4 0.6 0.4 0.6 CK Write DQS Preamble Setup Time tWPRES 0 - 0 - 0 - ns Write DQS Preamble Hold Time tWPREH 0.35 - 0.35 - 0.35 - CK Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 CK Mode Register Set Delay tMRD 10 - 10 - 10 - ns Exit Self Refresh to Any Execute Command tXSC 200 - 200 - 200 - CK Power Down Exit Time tPDEX 2tCK + tIS - 2tCK + tIS - 1tCK + tIS - CK Average Periodic Refresh Interval tREFI - 7.8 - 7.8 - 7.8 us Read DQS Postamble Time Note 4 Note : 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. 2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE. 3. Data latched at both rising and falling edges of Data Strobes(UDQS,LDQS) : DQ, LDM,UDM. 4. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. 5. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 6. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. 7. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. Rev. 1.0 / Oct. 2005 29 1HY5DU281622ETP AC CHARACTERISTICS - I (Continued) Parameter Symbol 4 5 Unit Min Max Min Max tRC 15 - 12 - tRC_APCG 17 - 13 - Auto Refresh Row Cycle Time tRFC 18 - 14 - CK Row Active Time tRAS 10 100K 8 100K CK Row Address to Column Address Delay for Read tRCDRD 5 - 4 - CK Row Address to Column Address Delay for Write tRCDWR 3 - 2 - CK Row Active to Row Active Delay tRRD 3 - 2 - CK Column Address to Column Address Delay tCCD 1 - 1 - CK Row Precharge Time tRP 5 - 4 - CK Write Recovery Time tWR 3 - 3 - CK Last Data-In to Read Command tDRL 2 - 2 - CK Auto Precharge Write Recovery + Precharge Time tDAL 8 - 7 - CK 4 10 - - - - 5 10 Row Cycle Time(Manual Precharge) Row Cycle Time(Auto Precharge) System Clock Cycle Time CL=4 CL=3 tCK Note CK ns Clock High Level Width tCH 0.45 0.55 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.6 0.6 -0.65 0.65 ns DQS-Out edge to Clock edge Skew tDQSCK -0.6 0.6 -0.55 0.55 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.4 - 0.4 ns Data-Out hold time from DQS tQH tHPmin -tQHS - tHPmin -tQHS - ns 1,6 Clock Half Period tHP tCH/L min - tCH/L min - ns 1,5 tQHS - 0.4 - 0.45 ns 6 Input Setup Time tIS 0.75 - 0.6 - ns 2 Input Hold Time tIH 0.75 - 0.6 - ns 2 Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 CK Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 CK Clock to First Rising edge of DQS-In tDQSS 0.85 1.15 0.72 1.28 CK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.4 - 0.4 - ns 3 Data-In Hold Time to DQS-In (DQ & DM) tDH 0.4 - 0.4 - ns 3 DQS falling edge to CK setup time tDSS 0.3 - 0.3 - CK Data Hold Skew Factor Rev. 1.0 / Oct. 2005 30 1HY5DU281622ETP Parameter Symbol 4 5 Unit Min Max Min Max DQS falling edge hold time from CK tDSH 0.3 - 0.3 - CK Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 CK Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 CK Write DQS Preamble Setup Time tWPRES 0 - 0 - ns Write DQS Preamble Hold Time tWPREH 0.35 - 0.25 - CK Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 CK Mode Register Set Delay tMRD 10 - 10 - ns Exit Self Refresh to Any Execute Command tXSC 200 - 200 - CK Power Down Exit Time tPDEX 1tCK + tIS - 1tCK + tIS - CK Average Periodic Refresh Interval tREFI - 7.8 - 7.8 us Note 4 Note : 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. 2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE. 3. Data latched at both rising and falling edges of Data Strobes(UDQS,LDQS) : DQ, UDM,LDM. 4. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. 5. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 6. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. 7. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. Rev. 1.0 / Oct. 2005 31 1HY5DU281622ETP AC CHARACTERISTICS - II Frequency CL tRC tRC_APCG tRFC tRAS tRCDRD tRCDWR tRP tDAL Unit 400MHz (2.5ns) 5 22 24 26 16 6 4 6 10 tCK 375MHz (2.6ns) 5 21 23 25 15 6 4 6 10 tCK 350MHz (2.8ns) 4 20 22 24 14 6 4 6 10 tCK 333MHz (3.0ns) 4 19 21 23 13 6 4 6 10 tCK 300MHz (3.3ns) 4 18 20 22 12 6 4 6 10 tCK 275MHz (3.6ns) 4 16 18 20 11 5 3 5 8 tCK 250MHz (4.0ns) 4 15 17 18 10 5 3 5 8 tCK 200MHz (5.0ns) 3 12 13 14 8 4 2 4 7 tCK Rev. 1.0 / Oct. 2005 32 1HY5DU281622ETP CAPACITANCE (TA=25oC, f=1MHz ) Parameter Pin Symbol Min Max Unit Input Clock Capacitance CK, /CK CCK 2 3 pF Input Capacitance All other input-only pins CIN 2 3 pF Input / Output Capacitance DQ, DQS, DM CIO 4 5 pF Note : 1. VDD = min. to max., VDDQ = 2.375V to 2.625V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V 2. Pins not under test are tied to GND. 3. These values are guaranteed by design and are tested on a sample basis only. OUTPUT LOAD CIRCUIT V TT R T =50Ω Output Zo=50Ω V REF C L=30pF Rev. 1.0 / Oct. 2005 33 1HY5DU281622ETP PACKAGE INFORMATION 400mil 66pin Thin Small Outline Package Unit : mm(Inch) 11.94 (0.470) 11.79 (0.462) 10.26 (0.404) 10.05 (0.396) BASE PLANE 22.33 (0.879) 22.12 (0.871) 0.65 (0.0256) BSC 1.194 (0.0470) 0.991 (0.0390) Rev. 1.0 / Oct. 2005 0.35 (0.0138) 0.25 (0.0098) 0 ~ 5 Deg. SEATING PLANE 0.15 (0.0059) 0.05 (0.0020) 0.597 (0.0235) 0.406 (0.0160) 0.210 (0.0083) 0.120 (0.0047) 34