HY5DU283222Q 128M(4Mx32) GDDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02 1 HY5DU283222Q Revision History No. History Date 0.4 1) Changed some AC parameters a) tAC : Changed from 0.7ns to 0.9ns b) tDQSCK : Changed from 0.6ns to 0.7ns c) tRCD/tRP : Changed from 4clks to 5clks at 222MHz and from 3clks to 4clks at 200/183MHz Jun. 2001 0.5 Removed 166MHz part from speed bin Defined IDD specification Defined AC parameters of 250MHz part Changed Pin Capacitance a) Input Clock capacitance : Changed from 2/3pF to 1.7/2.7pF (min/max) b) All other Input-only pins capacitance : Changed from 2/3pF to 1.7/2.7pF (min/max) c) Input/Output capacitance (DQ, DQS, DM) : Changed from 4/5pF to 3.7/4.7pF (min/max) 5) Changed some AC parameters a) tIS/tIH : Changed from 0.9ns to 1.0ns b) tDS/tDH : Changed from 0.45ns to 0.5ns 6) Changed VIH/VIL from Vref +/- 0.31V to Vref +/- 0.35V Aug. 2001 0.6 1) Changed VIH/VIL from Vref +/- 0.35V to Vref +/- 0.45V 2) Change tCK_max from 5.5ns to 6ns at 250/222MHz and from 10ns to 7ns at 200/183MHz Oct. 2001 0.7 1) Changed some AC parameters a) tQHS : Changed from 0.75ns to 0.45ns at 200/183MHz b) tDS/tDH : Changed from 0.5ns to 0.45ns Oct. 2001 0.8 1) tRCD/tRP of 3clocks at 183/200MHz at single bank operation defined 2) tCK Max of 200/183MHz part changed from 7ns to 8ns Nov. 2001 0.9 1) Power dissipation SPEC. changed from 1W to 2W 2) 200MHz IDD4 SPEC changed from 370mA to 300mA 3) Output Load circuit updated Dec. 2001 1.0 1) 200/183MHz of tCK max changed from 8ns to 10ns May. 2002 1.1 1) Input leakage current changed from +/-5uA to +/-2uA May. 2002 1.2 1) Added 200MHz with CL3 at 250/222MHz speed bin 2) 200MHz IDD4 SPEC changed from 300mA to 370mA Oct. 2002 Remark 1) 2) 3) 4) Rev. 1.2/Oct. 02 2 HY5DU283222Q DESCRIPTION The Hynix HY5DU283222Q is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 4Mx32 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. FEATURES • VDD, VDDQ = 2.5V ± 5% • All inputs and outputs are compatible with SSTL_2 interface • JEDEC standard 20mm x 14mm 100pin LQFP with 0.65mm pin pitch • Fully differential clock inputs (CK, /CK) operation • Double data rate interface • Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe • All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock • Write mask byte controls by DM (DM0 ~ DM3) • Programmable /CAS Latency 3 and 4 supported • Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode • Internal 4 bank operations with single pulsed /RAS • tRAS Lock-Out function supported • Auto refresh and self refresh supported • 4096 refresh cycles / 32ms • Half strength and Matched Impedance driver option controlled by EMRS ORDERING INFORMATION Part No. Power Supply HY5DU283222Q-4 Clock Frequency Max Data Rate 250MHz 500Mbps/pin HY5DU283222Q-45 VDD/VDDQ 222MHz 444Mbps/pin HY5DU283222Q-5 = 2.5V 200MHz 400Mbps/pin 183MHz 366Mbps/pin HY5DU283222Q-55 Rev. 1.2/Oct. 02 interface SSTL_2 Package 20mm x 14mm 100pin LQFP 3 HY5DU283222Q DQ30 VSSQ DQ29 82 81 VDDQ 86 83 NC 87 VSS NC 88 DQ31 NC 89 84 NC 90 85 VSSQ NC 91 NC 92 93 VDD 96 VDDQ DQ0 97 DQS DQ1 98 94 VSSQ 95 DQ2 99 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 TOP VIEW A6 50 49 DQ28 VDDQ DQ27 DQ26 VSSQ DQ25 DQ24 VDDQ DQ15 DQ14 VSSQ DQ13 DQ12 VDDQ VSS VDD DQ11 DQ10 VSSQ DQ9 DQ8 VDDQ VREF DM3 DM1 CLK /CLK CKE NC A8/AP A7 48 A5 VSS 47 46 A4 45 A9 NC 43 NC 44 42 NC 41 40 NC NC 39 NC A11 38 37 A10 NC 36 35 VDD 34 A3 33 A2 A1 A0 32 20mm x 14mm 100 Pin QFP 0.65mm Pitch 31 DQ3 VDDQ DQ4 DQ5 VSSQ DQ6 DQ7 VDDQ DQ16 DQ17 VSSQ DQ18 DQ19 VDDQ VDD VSS DQ20 DQ21 VSSQ DQ22 DQ23 VDDQ DM0 DM2 /WE /CAS /RAS /CS BA0 BA1 100 PIN CONFIGURATION ROW and COLUMN ADDRESS TABLE Rev. 1.2/Oct. 02 Items 4Mx32 Organization 1M x 32 x 4banks Row Address A0 ~ A11 Column Address A0 ~ A7 Bank Address BA0, BA1 Auto Precharge Flag A8 Refresh 4K 4 HY5DU283222Q PIN DESCRIPTION PIN TYPE CK, /CK Input Clock: CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK (both directions of crossing). CKE Input Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE must be maintained high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after Vdd is applied. /CS Input Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All commands are masked when CS is registered high. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRECHARGE command is being applied. A0 ~ A11 Input Address Inputs: Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A8 is sampled during a precharge command to determine whether the PRECHARGE applies to one bank (A8 LOW) or all banks (A8 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET command (MRS or EMRS). /RAS, /CAS, /WE Input Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being entered. DM0 ~ DM3 Input Input Data Mask: DM(0~3) is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. DM0 corresponds to the data on DQ0-Q7; DM1 corresponds to the data on DQ8-Q15; DM2 corresponds to the data on DQ16-Q23; DM3 corresponds to the data on DQ24-Q31. DQS I/O Data Strobe: Output with read data, input with write data. Edge aligned with read data, centered in write data. Used to capture write data. DQ0 ~ DQ31 I/O Data input / output pin : Data Bus VDD/VSS Supply Power supply for internal circuits and input buffers. VDDQ/VSSQ Supply Power supply for output buffers for noise immunity. VREF Supply Reference voltage for inputs for SSTL interface. NC NC Rev. 1.2/Oct. 02 DESCRIPTION No connection. 5 HY5DU283222Q FUNCTIONAL BLOCK DIAGRAM 4Banks x 1Mbit x 32 I/O Double Data Rate Synchronous DRAM Input Buffer 32 Write Data Register 2-bit Prefetch Unit 64 1Mx32/Bank0 1Mx32 /Bank2 64 1Mx32 /Bank3 Mode Register 32 Output Buffer 1Mx32 /Bank1 Command Decoder 2-bit Prefetch Unit Bank Control Sense AMP CLK /CLK CKE /CS /RAS /CAS /WE DM(0~3) DS DQ[0:31] Row Decoder Column Decoder A0-11 BA0,BA1 Address Buffer DQS Column Address Counter Data Strobe Transmitter CLK_DLL DS CLK, /CLK Data Strobe Receiver DLL Block Mode Register Rev. 1.2/Oct. 02 6 HY5DU283222Q SIMPLIFIED COMMAND TRUTH TABLE A8/ AP Command CKEn-1 CKEn CS RAS CAS WE Extended Mode Register Set H X L L L L OP code 1,2 Mode Register Set H X L L L L OP code 1,2 H X H X X X L H H H X 1 H X L L H H H X L H L H CA H X L H L L CA H X L L H L X Read Burst Stop H X L H H L X 1 Auto Refresh H H L L L H X 1 Entry H L L L L H Exit L H H X X X L H H H Entry H L H X X X L H H H H X X X L H H H 1 H X X X 1 L V V V Device Deselect No Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Self Refresh Precharge Power Down Mode Active Power Down Mode Exit L H Entry H L Exit L H X ADDR RA BA V L H L H V V Note 1 1 1,3 1 1,4 H X 1,5 L V 1 1 X 1 1 X X 1 1 1 1 ( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation ) Note : 1. DM(0~3) states are Don’t Care. Refer to below Write Mask Truth Table. 2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS. Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from Prechagre command. 3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+tRP). 4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time (tWR) is needed to guarantee that the last data has been completely written. 5. If A8/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged. Rev. 1.2/Oct. 02 7 HY5DU283222Q WRITE MASK TRUTH TABLE CKEn-1 CKEn /CS, /RAS, /CAS, /WE DM(0~3) Data Write H X X L X 1,2 Data-In Mask H X X H X 1,2 Function ADDR A8/ AP BA Note Note : 1. Write Mask command masks burst write data with reference to DQS(Data Strobes) and it is not related with read data. 2. DM0 corresponds to the data on DQ0-Q7; DM1 corresponds to the data on DQ8-Q15; DM2 corresponds to the data on DQ16-Q23; DM3 corresponds to the data on DQ24-Q31. Rev. 1.2/Oct. 02 8 HY5DU283222Q OPERATION COMMAND TRUTH TABLE - I Current State IDLE ROW ACTIVE READ WRITE Rev. 1.2/Oct. 02 /CS /RAS /CAS /WE Address Command Action H X X X X DSEL NOP or power down3 L H H H X NOP NOP or power down3 L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4 L L H H BA, RA ACT Row Activation L L H L BA, AP PRE/PALL NOP L L L H X AREF/SREF Auto Refresh or Self Refresh5 L L L L OPCODE MRS Mode Register Set H X X X X DSEL NOP L H H H X NOP NOP L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP Begin read : optional AP6 L H L L BA, CA, AP WRITE/WRITEAP Begin write : optional AP6 L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Precharge7 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST Terminate burst L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Term burst, precharge L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8 L H L L BA, CA, AP WRITE/WRITEAP Term burst, new write:optional AP 9 HY5DU283222Q OPERATION COMMAND TRUTH TABLE - II Current State WRITE READ WITH AUTOPRECHARGE WRITE AUTOPRECHARGE PRECHARGE Rev. 1.2/Oct. 02 /CS /RAS /CAS /WE Address Command Action L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Term burst, precharge L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST ILLEGAL L H L H BA, CA, AP READ/READAP ILLEGAL10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST ILLEGAL L H L H BA, CA, AP READ/READAP ILLEGAL10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP-Enter IDLE after tRP L H H H X NOP NOP-Enter IDLE after tRP L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL NOP-Enter IDLE after tRP L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 10 HY5DU283222Q OPERATION COMMAND TRUTH TABLE - III Current State ROW ACTIVATING WRITE RECOVERING WRITE RECOVERING WITH AUTOPRECHARGE REFRESHING Rev. 1.2/Oct. 02 /CS /RAS /CAS /WE Address Command Action H X X X X DSEL NOP - Enter ROW ACT after tRCD L H H H X NOP NOP - Enter ROW ACT after tRCD L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,9,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter ROW ACT after tWR L H H H X NOP NOP - Enter ROW ACT after tWR L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter precharge after tDPL L H H H X NOP NOP - Enter precharge after tDPL L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,8,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter IDLE after tRC L H H H X NOP NOP - Enter IDLE after tRC L H H L X BST ILLEGAL11 L H L H BA, CA, AP READ/READAP ILLEGAL11 11 HY5DU283222Q OPERATION COMMAND TRUTH TABLE - IV Current State WRITE MODE REGISTER ACCESSING /CS /RAS /CAS /WE Address Command Action L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11 L L H H BA, RA ACT ILLEGAL11 L L H L BA, AP PRE/PALL ILLEGAL11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter IDLE after tMRD L H H H X NOP NOP - Enter IDLE after tMRD L H H L X BST ILLEGAL11 L H L H BA, CA, AP READ/READAP ILLEGAL11 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11 L L H H BA, RA ACT ILLEGAL11 L L H L BA, AP PRE/PALL ILLEGAL11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 Note : 1. H - Logic High Level, L - Logic Low Level, X - Don’t Care, V - Valid Data Input, BA - Bank Address, AP - AutoPrecharge Address, CA - Column Address, RA - Row Address, NOP - NO Operation. 2. All entries assume that CKE was active(high level) during the preceding clock cycle. 3. If both banks are idle and CKE is inactive(low level), then in power down mode. 4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of that bank. 5. If both banks are idle and CKE is inactive(low level), then self refresh mode. 6. Illegal if tRCD is not met. 7. Illegal if tRAS is not met. 8. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 9. Illegal if tRRD is not met. 10. Illegal for single bank, but legal for other banks in multi-bank devices. 11. Illegal for all banks. Rev. 1.2/Oct. 02 12 HY5DU283222Q CKE FUNCTION TRUTH TABLE Current State CKEn1 CKEn /CS /RAS /CAS /WE /ADD Action H X X X X X X INVALID L H H X X X X Exit self refresh, enter idle after tSREX L H L H H H X Exit self refresh, enter idle after tSREX L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP, continue self refresh SELF REFRESH1 POWER DOWN2 ALL BANKS IDLE4 ANY STATE OTHER THAN ABOVE H X X X X X X INVALID L H H X X X X Exit power down, enter idle L H L H H H X Exit power down, enter idle L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP, continue power down mode H H X X X X X See operation command truth table H L L L L H X Enter self refresh H L H X X X X Exit power down H L L H H H X Exit power down H L L H H L X ILLEGAL H L L H L X X ILLEGAL H L L L H X X ILLEGAL H L L L L L X ILLEGAL L L X X X X X NOP H H X X X X X See operation command truth table H L X X X X X ILLEGAL5 L H X X X X X INVALID L L X X X X X INVALID Note : When CKE=L, all DQ and DQS must be in Hi-Z state. 1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command. 2. All command can be stored after 2 clocks from low to high transition of CKE. 3. Illegal if CK is suspended or stopped during the power down mode. 4. Self refresh can be entered only from the all banks idle state. 5. Disabling CK may cause malfunction of any bank which is in active state. Rev. 1.2/Oct. 02 13 HY5DU283222Q SIMPLIFIED STATE DIAGRAM MRS MODE REGISTER SET SREF SELF REFRESH IDLE SREX PDEN PDEX AREF ACT POWER DOWN POWER DOWN AUTO REFRESH PDEN BST PDEX BANK ACTIVE READ WRITE READ WRITE WRITEAP WRITE WITH AUTOPRECHARGE PRE(PALL) READAP READ READAP WITH AUTOPRECHARGE WRITEAP READ WRITE PRE(PALL) PRE(PALL) PRECHARGE POWER-UP Command Input Automatic Sequence POWER APPLIED Rev. 1.2/Oct. 02 14 HY5DU283222Q POWER-UP SEQUENCE AND DEVICE INITIALIZATION DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Power must first be applied to VDD, then to VDDQ, and finally to VREF (and to the system VTT). VTT must be applied after VDDQ to avoid device latch-up, which may cause permanent damage to the device. VREF can be applied anytime after VDDQ, but is expected to be nominally coincident with VTT. Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal operation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200us delay prior to applying an executable command. Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Register set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state. Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command for the Mode Register, with the reset DLL bit deactivated low (i.e. to program operating parameters without resetting the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation. 1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVCMOS low state. (All the other input pins may be undefined.) • VDD and VDDQ are driven from a single power converter output. • VTT is limited to 1.44V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation. • VREF tracks VDDQ/2. • A minimum resistance of 42 Ohms (22 ohm series resistor + 22 ohm parallel resistor - 5% tolerance) limits the input current from the VTT supply into any pin. • If the above criteria cannot be met by the system design, then the following sequencing and voltage relationship must be adhered to during power up. Votage description Sequencing Voltage relationship to avoid latch-up VDDQ After or with VDD < VDD + 0.3V VTT After or with VDDQ < VDDQ + 0.3V VREF After or with VDDQ < VDDQ + 0.3V 2. Start clock and maintain stable clock for a minimum of 200usec. 3. After stable power and clock, apply NOP condition and take CKE high. 4. Issue Extended Mode Register Set (EMRS) to enable DLL. 5. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=High. (An additional 200 cycles(tXSRD) of clock are required for locking DLL) 6. Issue Precharge commands for all banks of the device. Rev. 1.2/Oct. 02 15 HY5DU283222Q 7. Issue 2 or more Auto Refresh commands. 8. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low. Power-Up Sequence VDD VDDQ tVTD VTT VREF /CLK CLK tIS tIH CKE LVCMOS Low Level CMD NOP PRE EMRS MRS ADDR CODE A10 BA0, BA1 NOP PRE MRS ACT RD CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE Non-Read Command READ AREF DM DQS DQ'S T=200usec tRP tMRD tMRD tRP tRFC tMRD tXSRD* Power UP VDD and CK stable Precharge All EMRS Set MRS Set Reset DLL (with A8=H) Precharge All 2 or more Auto Refresh MRS Set (with A8=L) * 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command Rev. 1.2/Oct. 02 16 HY5DU283222Q MODE REGISTER SET (MRS) The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length, burst type, test mode, DLL reset. The mode register is program via MRS command. This command is issued by the low signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to write the data in mode register. During the the MRS cycle, any command cannot be issued. Once mode register field is determined, the information will be held until resetted by another MRS command. BA1 BA0 0 0 A11 A10 RFU A9 A8 A7 DR TM A6 A5 A4 CAS Latency BA0 MRS Type A7 Test Mode 0 MRS 0 Normal 1 EMRS 1 Vendor test mode A3 A2 BT A1 A0 Burst Length Burst Length Rev. 1.2/Oct. 02 A2 A1 A8 DLL Reset 0 No 0 0 1 Yes 0 A0 Sequential Interleave 0 Reserved Reserved 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 Reserved Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved Reserved 1 1 1 Reserved Reserved A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 Reserved 0 1 0 Reserved 0 1 1 3 1 0 0 4 1 0 1 Reserved A3 Burst Type 1 1 0 Reserved 0 Sequential 1 1 1 Reserved 1 Interleave 17 HY5DU283222Q BURST DEFINITION Burst Length Starting Address (A2,A1,A0) Sequential Interleave XX0 0, 1 0, 1 XX1 1, 0 1, 0 X00 0, 1, 2, 3 0, 1, 2, 3 X01 1, 2, 3, 0 1, 0, 3, 2 X10 2, 3, 0, 1 2, 3, 0, 1 X11 3, 0, 1, 2 3, 2, 1, 0 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6 010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5 011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2 110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1 111 0, 1, 2, 3, 4, 5, 6, 7 7, 6, 5, 4, 3, 2, 1, 0 2 4 8 BURST LENGTH & TYPE Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst length determines the maximum number of column locations that can be accessed for a given Read or Write command. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst length is set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both Read and Write bursts. Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Burst Definitionon Table Rev. 1.2/Oct. 02 18 HY5DU283222Q CAS LATENCY The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the availability of the first burst of output data. The latency can be programmed 3 or 4 clocks. If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident with clock edge n +m. Reserved states should not be used as unknown operation or incompatibility with future versions may result. DLL RESET The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally applied clock before an any command can be issued. OUTPUT DRIVER IMPEDANCE CONTROL The HY5DU283222Q supports both Half strength driver and Matched impedance driver, intended for lighter load and/ or point-to-point environments. Half strength driver is to define about 50% of Full drive strength which is specified to be SSTL_2, Class II, and Matched impedance driver, about 30% of Full drive strength. Rev. 1.2/Oct. 02 19 HY5DU283222Q EXTENDED MODE REGISTER SET (EMRS) The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional functions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits shown below. The Extended Mode Register is programmed via the Mode Register Set command ( BA0=1 and BA1=0) and will retain the stored information until it is programmed again or the device loses power. The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent operation. Violating either of these requirements will result in unspecified operation. BA1 BA0 0 1 A11 A10 A9 RFU* BA0 MRS Type 0 MRS 1 EMRS A8 A7 A6 A5 A4 DS A3 RFU* A2 A1 A0 DS DLL A0 DLL enable 0 Enable 1 Diable A6 A1 Output Driver Impedance Control 0 0 RFU* 0 1 Half 1 0 RFU* 1 1 Matched Impedance (Weak) * All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage. Rev. 1.2/Oct. 02 20 HY5DU283222Q ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 oC Storage Temperature TSTG -55 ~ 125 oC VIN, VOUT -0.5 ~ 3.6 V VDD -0.5 ~ 3.6 V VDDQ -0.5 ~ 3.6 V Output Short Circuit Current IOS 50 mA Power Dissipation PD 2 W TSOLDER 260 ⋅ 10 Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Voltage on VDDQ relative to VSS Soldering Temperature ⋅ Time o C ⋅ sec Note : Operation at above absolute maximum rating can adversely affect device reliability DC OPERATING CONDITIONS Parameter (TA=0 to 70oC, Voltage referenced to VSS = 0V) Symbol Min Typ. Max Unit Power Supply Voltage VDD 2.375 2.5 2.625 V Power Supply Voltage VDDQ 2.375 2.5 2.625 V Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V Input Low Voltage VIL -0.3 - VREF - 0.15 V Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V Reference Voltage VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V Note 1 2 3 Note : 1. VDDQ must not exceed the level of VDD. 2. VIL (min) is acceptable -1.5V AC pulse width with ≤ 5ns of duration. 3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same. Peak to peak noise on VREF may not exceed ± 2% of the dc value. DC CHARACTERISTICS I Parameter (TA=0 to 70oC, Voltage referenced to VSS = 0V) Symbol Min. Max Unit Note Input Leakage Current ILI -2 2 uA 1 Output Leakage Current ILO -5 5 uA 2 Output High Voltage VOH VTT + 0.76 - V IOH = -15.2mA Output Low Voltage VOL - VTT - 0.76 V IOL = +15.2mA Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to 2.7V Rev. 1.2/Oct. 02 21 HY5DU283222Q DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V) Speed Parameter Symbol Test Condition Unit Note 4 45 5 55 Operating Current IDD1 Burst length=4, One bank active tRC ≥ tRC(min), IOL=0mA 260 250 240 230 mA Precharge Standby Current in Power Down Mode IDD2P CKE ≤ VIL(max), tCK = min 30 25 20 20 mA Precharge Standby Current in Non Power Down Mode IDD2N CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = min, Input signals are changed one time during 2clks 90 85 80 80 mA Active Standby Current in Power Down Mode IDD3P CKE ≤ VIL(max), tCK = min 35 30 25 25 mA Active Standby Current in Non Power Down Mode IDD3N CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = min, Input signals are changed one time during 2clks 130 110 100 100 mA Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 450 400 370 350 mA 1 Auto Refresh Current IDD5 tRC ≥ tRFC(min), All banks active 270 mA 1,2 Self Refresh Current IDD6 CKE ≤ 0.2V 3 mA 1 Note : 1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open. 2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS. Rev. 1.2/Oct. 02 22 HY5DU283222Q AC OPERATING CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Symbol Min Max Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.45 Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) Input Differential Voltage, CK and /CK inputs VID(AC) Input Crossing Point Voltage, CK and /CK inputs VIX(AC) Unit Note V VREF - 0.45 V 0.7 VDDQ + 0.6 V 1 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 Note : 1. VID is the magnitude of the difference between the input level on CK and the input on /CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Value Unit Reference Voltage VDDQ x 0.5 V Termination Voltage VDDQ x 0.5 V AC Input High Level Voltage (VIH, min) VREF + 0.45 V AC Input Low Level Voltage (VIL, max) VREF - 0.45 V Input Timing Measurement Reference Level Voltage VREF V Output Timing Measurement Reference Level Voltage VTT V Input Signal maximum peak swing 1.5 V Input minimum Signal Slew Rate 1 V/ns Termination Resistor (RT) 50 Ω Series Resistor (RS) 25 Ω Output Load Capacitance for Access Time Measurement (CL) 30 pF Rev. 1.2/Oct. 02 23 HY5DU283222Q AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol 4 45 5 Min Max Min Max 55 Unit Note Min Max Min Max 55 - 60.5 - ns 50 - 55 - ns Row Cycle Time tRC 60 - 63 - Auto Refresh Row Cycle Time tRFC 68 - 67.5 - 65 - 66 - ns Row Active Time tRAS 40 120K 40.5 120K 35 120K 38.5 120K ns Row Address to Column Address Delay for Read tRCDRD 5 - 5 - 4 - 4 - CK 3 - 3 - CK Row Address to Column Address Delay for Write tRCDWR 3 - 3 - 2 - 2 - CK Row Active to Row Active Delay tRRD 2 - 2 - 2 - 2 - CK Column Address to Column Address Delay tCCD 1 - 1 - 1 - 1 - CK Row Precharge Time tRP 5 - 5 - 4 - 4 - CK 3 - 3 - CK Last Data-In to Precharge Delay Time (Write Recovery Time : tWR) tDPL 3 - 3 - 2 - 2 - CK Last Data-In to Read Command tDRL 2 - 2 - 2 - 2 - CK Auto Precharge Write Recovery + Precharge Time tDAL 8 - 8 - 6 - 6 - CK 4 6 4.5 6 - - - - ns 5 10 5 10 5 10 5.5 10 ns System Clock Cycle Time CL = 4 CL = 3 tCK 1 1 1 Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.9 0.9 -0.9 0.9 -0.9 0.9 -0.9 0.9 ns DQS-Out edge to Clock edge Skew tDQSCK -0.7 0.7 -0.7 0.7 -0.7 0.7 -0.7 0.7 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.4 - 0.4 - 0.4 - 0.4 ns Data-Out hold time from DQS tQH tHPmin -tQHS - tHPmin -tQHS - tHPmin -tQHS - tHPmin -tQHS - ns 2,7 Clock Half Period tHP tCH/L min - tCH/L min - tCH/L min - tCH/L min - ns 2,6 tQHS - 0.6 - 0.6 - 0.45 - 0.45 ns 7 Input Setup Time tIS 1.0 - 1.0 - 1.0 - 1.0 - ns 3 Input Hold Time tIH 1.0 - 1.0 - 1.0 - 1.0 - ns 3 Data Hold Skew Factor Rev. 1.2/Oct. 02 24 HY5DU283222Q Parameter Symbol 4 45 5 55 Min Max Min Max Min Max Min Max Unit Note Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK Clock to First Rising edge of DQS-In tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 CK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.45 - 0.45 - 0.45 - 0.45 - ns 4 Data-In Hold Time to DQS-In (DQ & DM) tDH 0.45 - 0.45 - 0.45 - 0.45 - ns 4 Read DQS Preamble Time tRPRE 0.7 1.1 0.8 1.1 0.8 1.1 0.8 1.1 CK Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK Write DQS Preamble Setup Time tWPRES 0 - 0 - 0 - 0 - ns Write DQS Preamble Hold Time tWPREH 1.5 - 1.5 - 1.5 - 1.5 - ns Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 CK Mode Register Set Delay tMRD 2 - 2 - 2 - 2 - CK Exit Self Refresh to Any Execute Command tXSC 200 - 200 - 200 - 200 - CK Average Periodic Refresh Interval tREFI - 7.8 - 7.8 - 7.8 - 7.8 us 5 Note : 1. tRCD/tRP of 3 Clock at only single bank operation supported. 2. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. 3. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE. 4. Data latched at both rising and falling edges of Data Strobes(DQS) : DQ, DM(0~3). 5. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. 6. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 7. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. 8. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. Rev. 1.2/Oct. 02 25 HY5DU283222Q CAPACITANCE (TA=25oC, f=1MHz ) Parameter Pin Symbol Min Max Unit Input Clock Capacitance CK, /CK CCK 1.7 2.7 pF Input Capacitance All other input-only pins CIN 1.7 2.7 pF Input / Output Capacitance DQ, DQS, DM CIO 3.7 4.7 pF Note : 1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V 2. Pins not under test are tied to GND. 3. These values are guaranteed by design and are tested on a sample basis only. OUTPUT LOAD CIRCUIT V TT R T =50Ω Output Zo=50Ω V REF C L =30pF Rev. 1.2/Oct. 02 26 HY5DU283222Q PACKAGE INFORMATION 20mm x 14mm 100pin Low Quad Flat Package 22.10(0.870) 21.90(0.862) Unit:mm(inch) 16.10(0.634) 15.90(0.626) 14.10(0.555) 13.90(0.547) 20.10(0.791) 19.90(0.783) 1.60(0.063) 1.45(0.057) Detail A Base Plane 0.65 (0.026)TYP All dimension in mm (inches). Notation is Rev. 1.2/Oct. 02 Detail A 0.38(0.015) 0.22(0.009) Seating Plane 0.080 (0.003) Gauge Line 0.15(0.006) 0.05(0.002) 0.20(0.008) 0.09(0.004) 0~7 Deg 0.75(0.029) 0.50(0.020) 0.66(0.026) 0.45(0.018) 1.00(0.0394)REF MAX or typical. MIN 27