32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD232646B8J DESCRIPTION Hynix HYMD232646B8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD232646B8J series consists of eight 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate.Hynix HYMD232646B8J series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD232646B8J series is designed for high speed of up to 200MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and burst lengths allow variety of device operation in high performance memory system. Hynix HYMD232646B8J series incorporates SPD(serial presence detect). Serial presence detect function is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer. FEATURES • 256MB (32M x 64) Unbuffered DDR DIMM based on 32Mx8 DDR SDRAM • Data(DQ), Data strobes and Write masks latched on both rising and falling edges of the clock • JEDEC Standard 184-pin dual in-line memory module (DIMM) • Data inputs on DQS centers when write (centered DQ) • 2.5V +/- 0.2V VDD and VDDQ Power supply • • 2.6V +/- 0.1V VDD and VDDQ Power supply for DDR400 Data strobes synchronized with output data for read and input data for write • Programmable CAS Latency 3/ 2 / 2.5 supported • All inputs and outputs are compatible with SSTL_2 interface • Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode • Fully differential clock operations (CK & /CK) with 125MHz/133MHz/166MHz/200MHz • tRAS Lock-out function supported • Internal four bank operations with single pulsed RAS • All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock • Auto refresh and self refresh supported • 8192 refresh cycles / 64ms ORDERING INFORMATION Part No. Power Supply Clock Frequency Interface Form Factor HYMD232646B8J-J VDD=VDDQ=2.5V 166MHz (DDR333) SSTL_2 184pin Unbuffered DIMM 5.25 x 1.25 x 0.15 inch HYMD232646B8J-D4 VDD=VDDQ=2.6V 200MHz (DDR400) SSTL_2 184pin Unbuffered DIMM 5.25 x 1.25 x 0.15 inch HYMD232646B8J-D43 VDD=VDDQ=2.6V 200MHz (DDR400) SSTL_2 184pin Unbuffered DIMM 5.25 x 1.25 x 0.15 inch This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Apr. 2003 1 HYMD232646B8J PIN DESCRIPTION Pin Pin Description Pin Pin Description CK0,/CK0,CK1,/CK1,CK2,/CK2 Differential Clock Inputs VDDQ DQs Power Supply CS0 Chip Select Input VSS Ground CKE0 Clock Enable Input VREF Reference Power Supply /RAS, /CAS, /WE Commend Sets Inputs VDDSPD Power Supply for SPD A0 ~ A12 Address SA0~SA2 E2PROM Address Inputs BA0, BA1 Bank Address SCL E2PROM Clock DQ0~DQ63 Data Inputs/Outputs SDA E2PROM Data I/O DQS0~DQS7 Data Strobe Inputs/Outputs VDDID VDD Identification Flag DM0~DM7 Data-in Mask DU Do not Use VDD Power Supply NC No Connection PIN ASSIGNMENT Pin Name Pin Name Pin Name Pin Name Pin Name Pin 1 VREF 32 A5 62 VDDQ 93 VSS 124 VSS 154 Name /RAS 2 DQ0 33 DQ24 63 /WE 94 DQ4 125 A6 155 DQ45 VDDQ 3 VSS 34 VSS 64 DQ41 95 DQ5 126 DQ28 156 4 DQ1 35 DQ25 65 /CAS 96 VDDQ 127 DQ29 157 /CS0 5 DQS0 36 DQS3 66 VSS 97 DM0 128 VDDQ 158 /CS1 6 DQ2 37 A4 67 DQS5 98 DQ6 129 DM3 159 DM5 7 VDD 38 VDD 68 DQ42 99 DQ7 130 A3 160 VSS 8 DQ3 39 DQ26 69 DQ43 100 VSS 131 DQ30 161 DQ46 DQ47 9 NC 40 DQ27 70 VDD 101 NC 132 VSS 162 10 NC 41 A2 71 NC 102 NC 133 DQ31 163 NC 11 VSS 42 Vss 72 DQ48 103 A13* 134 CB4* 164 VDDQ 12 DQ8 43 A1 73 DQ49 104 VDDQ 135 CB5* 165 DQ52 13 DQ9 44 CB0* 74 VSS 105 DQ12 136 VDDQ 166 DQ53 14 DQS1 45 CB1* 75 /CK2 106 DQ13 137 CK0 167 NC 15 VDDQ 46 VDD 76 CK2 107 DM1 138 /CK0 168 VDD 16 CK1 47 DQS8* 77 VDDQ 108 VDD 139 VSS 169 DM6 17 /CK1 48 A0 78 DQS6 109 DQ14 140 DM8* 170 DQ54 18 VSS 49 CB2* 79 DQ50 110 DQ15 141 A10 171 DQ55 19 DQ10 50 VSS 80 DQ51 111 CKE1 142 CB6* 172 VDDQ 20 DQ11 51 CB3* 81 VSS 112 VDDQ 143 VDDQ 173 NC 21 CKE0 52 BA1 82 VDDID 113 BA2* 144 CB7* 174 DQ60 22 VDDQ 83 DQ56 114 DQ20 175 DQ61 23 DQ16 53 DQ32 84 DQ57 115 A12 145 VSS 176 VSS 24 DQ17 54 VDDQ 85 VDD 116 VSS 146 DQ36 177 DM7 25 DQS2 55 DQ33 86 DQS7 117 DQ21 147 DQ37 178 DQ62 26 VSS 56 DQS4 87 DQ58 118 A11 148 VDD 179 DQ63 27 A9 57 DQ34 88 DQ59 119 DM2 149 DM4 180 VDDQ 28 DQ18 58 VSS 89 VSS 120 VDD 150 DQ38 181 SA0 29 A7 59 BA0 90 WP 121 DQ22 151 DQ39 182 SA1 30 VDDQ 60 DQ35 91 SDA 122 A8 152 VSS 183 SA2 31 DQ19 61 DQ40 92 SCL 123 DQ23 153 DQ44 184 VDDSPD Key key * These are not used on this module but may be used for other module in 184pin DIMM family Rev. 0.2 / Apr. 2003 2 HYMD232646B8J FUNCTIONAL BLOCK DIAGRAM /CS0 DQS0 DQS4 DM0/DQS9 DM4/DQS13 DQ0 DQ1 DQ2 DM I/O0 I/O1 I/O2 /CS DQ3 DQ4 I/O3 I/O4 D0 DQ5 DQ6 DQ7 DQS DQ32 DQ33 DQ34 DM I/O0 I/O1 I/O2 /CS DQ35 DQ36 I/O3 I/O4 D4 I/O5 I/O6 DQ37 DQ38 I/O5 I/O6 I/O7 DQ39 I/O7 DQS1 DQS DQS5 DM1/DQS10 DM5/DQS14 DQ8 DQ9 DM I/O0 I/O1 /CS DQS DQ10 I/O2 DQ11 DQ12 I/O3 I/O4 DQ13 DQ14 I/O5 I/O6 DQ44 DQ45 DQ46 DQ15 I/O7 DQ47 DM I/O0 I/O1 DQ40 DQ41 DQ42 D1 DQS I/O2 I/O3 I/O4 DQ43 DQS2 /CS D5 I/O5 I/O6 I/O7 DQS6 DM2/DQS11 DM6/DQS15 DM I/O0 I/O1 DQ16 DQ17 DQ18 /CS DQS DQ48 DQ49 DQ50 I/O2 DQ19 DQ20 I/O3 I/O4 DQ21 DQ22 I/O5 I/O6 DQ23 I/O7 D2 DQ51 DQ52 DQ53 DQS3 DM I/O0 I/O1 /CS DQS I/O2 I/O3 I/O4 DQ54 I/O5 I/O6 DQ55 I/O7 D6 DQS7 DM3/DQS12 DM7/DQS16 DQ24 DQ25 DQ26 DM I/O0 I/O1 I/O2 DQ27 DQ28 I/O3 I/O4 DQ29 DQ30 DQ31 /CS DQS DQ56 DQ57 DQ58 DM I/O0 I/O1 I/O2 DQ59 DQ60 I/O3 I/O4 I/O5 I/O6 DQ61 DQ62 I/O5 I/O6 I/O7 DQ63 I/O7 D3 Serial PD A1 SA0 SA1 D7 SPD Clock Input SDRAMs VDD /VDDQ DO-D7 *CK0, /CK0 *CK1, /CK1 *CK2, /CK2 2 SDRAMs 3 SDRAMs 3 SDRAMs VREF DO-D7 WP A0 DQS VDD SPD *Clock Wiring SDA SCL /CS A2 SA2 *Wire per Clock Loading Table/Wiring Diagrams DO-D7 VSS VDDID Strap:see Note 4 Note : BA0-BA1 A0-A13 BA0-BA1 : SDRAMs D0-D7 A0-A13 : SDRAMs D0-D7 /RAS /RAS : SDRAMs D0-D7 /CAS /CAS : SDRAMs D0-D7 CKE0 CKE : SDRAMs D0-D7 /WE Rev. 0.2 / Apr. 2003 /WE : SDRAMs D0-D7 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/S relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors : 22 Ohms ± 5%. 4. VDDID strap connections (for memory device VDD, VDDQ): STRAP OUT (OPEN) : VDD = VDDQ STRAP IN (VSS) : VDD ≠V DDQ 5. BAx, Ax, RAS, CAS, WE resistors : 5.1 Ohms ± 5% 3 HYMD232646B8J ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 o C Storage Temperature TSTG -55 ~ 125 o C Voltage on Inputs relative to VSS VIN -0.5 ~ 3.6 V Voltage on I/O Pins relative to VSS VIO -0.5 ~ 3.6 V Voltage on VDD relative to VSS VDD -0.5 ~ 3.6 V Voltage on VDDQ relative to VSS VDDQ -0.5 ~ 3.6 V Output Short Circuit Current IOS 50 mA Power Dissipation PD 8 W Soldering Temperature Þ Time TSOLDER 260 / 10 oC / Sec Note : Operation at above absolute maximum rating can adversely affect device reliability DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS= 0V) Parameter Symbol Min Typ. Max Unit Note Power Supply Voltage VDD 2.3 2.5 2.7 V Power Supply Voltage VDD 2.5 2.6 2.7 V 4 Power Supply Voltage VDDQ 2.3 2.5 2.7 V 1 Power Supply Voltage VDDQ 2.5 2.6 2.7 V 1,4 Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V Input Low Voltage VIL -0.3 - VREF - 0.15 V Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V Reference Voltage VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V 2 3 Note : 1. VDDQ must not exceed the level of VDD. 2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration. 3. The value of VREF is approximately equal to 0.5VDDQ. 4. For DDR400, VDD=2.6V +/- 0.1V, VDDQ=2.6V+/-0.1V Rev. 0.2 / Apr. 2003 4 HYMD232646B8J AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V) Parameter Symbol Min Max Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) Input Differential Voltage, CK and /CK inputs VID(AC) Input Crossing Point Voltage, CK and /CK inputs VIX(AC) Unit Note V VREF - 0.31 V 0.7 VDDQ + 0.6 V 1 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 Note : 1. VID is the magnitude of the difference between the input level on CK and the input on /CK. 2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same. AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Value Unit Reference Voltage VDDQ x 0.5 V Termination Voltage VDDQ x 0.5 V AC Input High Level Voltage (VIH, min) VREF + 0.31 V AC Input Low Level Voltage (VIL, max) VREF - 0.31 V VREF V Output Timing Measurement Reference Level Voltage VTT V Input Signal maximum peak swing 1.5 V Input minimum Signal Slew Rate 1 V/ns Termination Resistor (RT) 50 W Series Resistor (RS) 25 W Output Load Capacitance for Access Time Measurement (CL) 30 pF Input Timing Measurement Reference Level Voltage Rev. 0.2 / Apr. 2003 5 HYMD232646B8J CAPACITANCE (TA=25oC, f=100MHz ) Parameter Pin Symbol Min Max Unit Input Capacitance A0 ~ A12, BA0, BA1 CIN1 58 72 pF Input Capacitance /RAS, /CAS, /WE CIN2 58 72 pF Input Capacitance CKE0 CIN3 58 72 pF Input Capacitance CS0 CIN4 58 72 pF Input Capacitance CK0, /CK0, CK1, /CK1, CK2,/CK2 CIN5 25 40 pF Input Capacitance DM0 ~ DM7 CIN6 8 12 pF Data Input / Output Capacitance DQ0 ~ DQ63, DQS0 ~ DQS7 CIO1 7.89 12 pF Note : 1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V 2. Pins not under test are tied to GND. 3. These values are guaranteed by design and are tested on a sample basis only. OUTPUT LOAD CIRCUIT VTT RT=50Ω Output Zo=50Ω VREF CL=30pF Rev. 0.2 / Apr. 2003 6 HYMD232646B8J DC CHARACTERISTICS I (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Input Leakage Current Symbol Add, CMD, /CS, /CKE Min. Max -16 16 -12 12 ILI CK, /CK Unit Note uA 1 Output Leakage Current ILO -5 5 uA 2 Output High Voltage VOH VTT + 0.76 - V IOH = -15.2mA Output Low Voltage VOL - VTT - 0.76 V IOL = +15.2mA Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V 2. DOUT is disabled, VOUT=0 to 2.7V Rev. 0.2 / Apr. 2003 7 HYMD232646B8J DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Symbol Speed Test Condition D43 Operating Current IDD0 One bank; Active Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current IDD1 One bank; Active - Read Precharge; Burst Length =2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle D4 -J Unit 1040 840 mA 1040 1200 mA Precharge Power Down Standby Current IDD2P All banks idle; Power down mode; CKE=Low, tCK=tCK(min) 80 160 mA Idle Standby Current IDD2F /CS=High, All banks idle ; tCK=tCK(min); CKE= High; address and control inputs changing once per clock cycle. VIN=VREF for DQ, DQS and DM 480 400 mA Active Power Down Standby Current IDD3P One bank active; Power down mode; CKE=Low, tCK=tCK(min) 120 200 mA Active Standby Current IDD3N /CS=HIGH; CKE=HIGH; One bank; Active Precharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 520 480 mA Operating Current IDD4R Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); IOUT=0mA 1520 2320 IDD4W Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); DQ, DM, and DQS inputs changing twice per clock cycle 1680 2320 1520 1840 Normal 24 24 mA Low Power 12 12 mA 2320 2520 mA Operating Current Auto Refresh Current IDD5 tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh Self Refresh Current IDD6 CKE=<0.2V; External clock on; tCK=tCK(min) Operating Current Four Bank Operation Rev. 0.2 / Apr. 2003 IDD7 Four bank interleaving with BL=4 Refer to the following page for detailed test condition Note mA 8 HYMD232646B8J AC CHARACTERISTICS (AC operating conditions unless otherwise noted) DDR333 Parameter Symbol Unit Min Max Row Cycle Time tRC 60 - ns Auto Refresh Row Cycle Time tRFC 72 - ns Row Active Time tRAS 42 70K ns Active to Read with Auto Precharge Delay tRAP 18 - ns Row Address to Column Address Delay tRCD 18 - ns Row Active to Row Active Delay tRRD 12 - ns Column Address to Column Address Delay tCCD 1 - CK Row Precharge Time tRP 18 - ns Write Recovery Time tWR 15 - ns Last Data-In to Read Command tDRL 1 - CK Auto Precharge Write Recovery + Precharge Time tDAL (tWR/tCK) + (tRP/tCK) - CK 6 12 ns 7.5 12 ns CL = 2.5 System Clock Cycle Time Note 16 15 tCK CL = 2 Clock High Level Width tCH 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.7 0.7 ns DQS-Out edge to Clock edge Skew tDQSCK -0.6 0.6 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.45 ns Data-Out hold time from DQS tQH tHP -tQHS - ns 1, 10 Clock Half Period tHP min (tCL,tCH) - ns 1,9 tQHS - 0.55 ns 10 Data Hold Skew Factor Valid Data Output Window tDV Data-out high-impedance window from CK, /CK tHZ -0.7 0.7 ns 17 Data-out low-impedance window from CK, /CK tLZ -0.7 0.7 ns 17 Input Setup Time (fast slew rate) tIS 0.75 - ns 2,3,5,6 Input Hold Time (fast slew rate) tIH 0.75 - ns 2,3,5,6 Input Setup Time (slow slew rate) tIS 0.8 - ns 2,4,5,6 Input Hold Time (slow slew rate) tIH 0.8 - ns 2,4,5,6 Rev. 0.2 / Apr. 2003 tQH-tDQSQ ns 9 HYMD232646B8J AC CHARACTERISTICS (AC operating conditions unless otherwise noted) - continued - DDR333 Parameter Symbol Min Input Pulse Width Unit Note ns 6 Max tIPW 2.2 Write DQS High Level Width tDQSH 0.35 - CK Write DQS Low Level Width tDQSL 0.35 - CK Clock to First Rising edge of DQS-In tDQSS 0.75 1.25 CK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.45 - ns 6,7, 11~13 Data-in Hold Time to DQS-In (DQ & DM) tDH 0.45 - ns 6,7, 11~13 DQ & DM Input Pulse Width tDIPW 1.75 - ns Read DQS Preamble Time tRPRE 0.9 1.1 CK Read DQS Postamble Time tRPST 0.4 0.6 CK Write DQS Preamble Setup Time tWPRES 0 - CK Write DQS Preamble Hold Time tWPREH 0.25 - CK Write DQS Postamble Time tWPST 0.4 0.6 CK Mode Register Set Delay tMRD 2 - CK Exit Self Refresh to Any Execute Command tXSC 200 - CK Average Periodic Refresh Interval tREFI - 7.8 us Rev. 0.2 / Apr. 2003 8 10 HYMD232646B8J AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter DDR400 (D4) DDR400 (D43) Min Max Min Max Symbol Unit Note Row Cycle Time tRC 58 - 55 - ns Auto Refresh Row Cycle Time tRFC 70 - 70 - ns Row Active Time tRAS 40 70K 40 70K ns Active to Read with Auto Precharge Delay tRAP tRCD or tRAS(min) - tRCD or tRAS(min) - ns Row Address to Column Address Delay tRCD 18 - 15 - ns Row Active to Row Active Delay tRRD 10 - 10 - ns Column Address to Column Address Delay tCCD 1 - 1 - CK Row Precharge Time tRP 18 - 15 - ns Write Recovery Time tWR 15 - 15 - ns Write to Read Command Delay tWTR 2 - 2 - CK Auto Precharge Write Recovery + Precharge Time tDAL (tWR/tCK) + (tRP/tCK) - (tWR/tCK) + (tRP/tCK) - CK System Clock Cycle Time tCK 5 10 5 10 ns Clock High Level Width tCH 0.45 0.55 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.7 0.7 -0.7 0.7 ns DQS-Out edge to Clock edge Skew tDQSCK -0.55 0.55 -0.55 0.55 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.4 - 0.4 ns Data-Out hold time from DQS tQH tHP -tQHS - tHP -tQHS - ns 1, 10 Clock Half Period tHP min (tCL,tCH) - min (tCL,tCH) - ns 1,9 tQHS - 0.5 - 0.5 ns 10 tAC(Max) ns 17 tAC(min) tAC(Max) ns 17 CL = 3 Data Hold Skew Factor 16 15 Data-out high-impedance window from CK, /CK tHZ tAC(Max) Data-out low-impedance window from CK, /CK tLZ tAC(min) tAC(Max) Input Setup Time (fast slew rate) tIS 0.6 - 0.6 - ns 2,3,5,6 Input Hold Time (fast slew rate) tIH 0.6 - 0.6 - ns 2,3,5,6 Input Setup Time (slow slew rate) tIS 0.7 - 0.7 - ns 2,4,5,6 Input Hold Time (slow slew rate) tIH 0.7 - 0.7 - ns 2,4,5,6 Rev. 0.2 / Apr. 2003 11 HYMD232646B8J AC CHARACTERISTICS (AC operating conditions unless otherwise noted) DDR400 (D4) Parameter - continued DDR400 (D43) Symbol Unit Note - ns 6 0.35 - CK - 0.35 - CK 1.28 0.72 1.28 CK Min Max Min Max tIPW 2.2 - 2.2 Write DQS High Level Width tDQSH 0.35 - Write DQS Low Level Width tDQSL 0.35 Clock to First Rising edge of DQS-In tDQSS 0.72 DQS falling edge to CK setup time tDSS 0.2 0.2 CK DQS falling edge hold time from CK tDSH 0.2 0.2 CK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.4 - 0.4 - ns Data-in Hold Time to DQS-In (DQ & DM) tDH 0.4 - 0.4 - ns DQ & DM Input Pulse Width tDIPW 1.6 - 1.6 - ns Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 CK Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 CK Write DQS Preamble Setup Time tWPRES 0 - 0 - CK Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - CK Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 CK Mode Register Set Delay tMRD 2 - 2 - CK Exit self refresh to non-READ command tXSNR 200 - 200 - CK 8 Exit self refresh to READ command tXSRD 200 - 200 - CK 8 Average Periodic Refresh Interval tREFI - 7.8 - 7.8 us Input Pulse Width 6,7,11, 12,13 6 Note : 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. 2. Data sampled at the rising edges of the clock : A0~A12, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE. 3. For command/address input slew rate >=1.0V/ns 4. For command/address input slew rate >=0.5V/ns and <1.0V/ns This derating table is used to increase tIS/tIH in case where the input slew-rate is below 0.5V/ns. Input Setup / Hold Slew-rate Derating Table. Input Setup / Hold Slew-rate Delta tIS Delta tIH V/ns ps ps 0.5 0 0 0.4 +50 0 0.3 +100 0 5. CK, /CK slew rates are >=1.0V/ns, ie, >=2.0V/ns differential. 6. These parameters quarantee device timing, but they are not necessarily tested on each device, and they may be quaranteed by design or tester correlation. 7. Data latched at both rising and falling edges of Data Strobes(LDQS/UDQS) : DQ, LDM/UDM. Rev. 0.2 / Apr. 2003 12 HYMD232646B8J 8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. 9. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 10. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects and p-channel to n-channel variation of the output drivers. 11. This derating table is used to increase tDS/tDH in case where the input slew-rate is below 0.5V/ns. Input Setup / Hold Slew-rate Derating Table. Input Setup / Hold Slew-rate Delta tDS Delta tDH V/ns ps ps 0.5 0 0 0.4 +75 +75 0.3 +150 +150 12. I/O Setup/Hold Plateau Derating. This derating table is used to increase tDS/tDH in case where the input level is flat below VREF +/-310mV for a duration of up to 2ns. 13. I/O Input Level Delta tDS Delta tDH mV ps ps +280 +50 +50 I/O Setup/Hold Delta Inverse Slew Rate Derating. This derating table is used to increase tDS/tDH in case where the DQ and DQS slew rates differ. The Delta Inverse Slew Rate is calculated as (1/SlewRate1)-(1/SlewRate2). For example, if slew rate 1=0.5V/ns and Slew Rate2 = 0.4V/n then the Delta Inverse Slew Rate = -0.5ns/V. (1/SlewRate1)-(1/SlewRate2) Delta tDS Delta tDH ns/V ps ps 0 0 0 +/-0.25 +50 +50 +/- 0.5 +100 +100 14. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the DC region must be monotonic. 15. tDAL = (tDPL / tCK ) + (tRP / tCK ). For each of the terms above, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time. Example: For DDR266B at CL=2.5 and tCK = 7.5 ns, tDAL = (15 ns / 7.5 ns) + (20 ns / 7.5 ns) = (2.00) + (2.67) Round up each non-integer to the next highest integer: = (2) + (3), tDAL = 5 clock 16. For the parts which do not has internal RAS lockout circuit, Active to Read with Auto precharge delay should be tRAS - BL/2 x tCK. 17. tHZ and tLZ transitions occur in the same access time windows as valid data trasitions. These parameters are not referenced to a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ). Rev. 0.2 / Apr. 2003 13 HYMD232646B8J SIMPLIFIED COMMAND TRUTH TABLE A10/ AP Command CKEn-1 CKEn /CS /RAS /CAS /WE Extended Mode Register Set H X L L L L OP code 1,2 Mode Register Set H X L L L L OP code 1,2 H X X X H X X 1 L H H H Device Deselect No Operation Bank Active H X L L H H H X L H L H ADDR RA Read BA V L CA Read with Autoprecharge 1 1,3 L H X L H L L CA Write with Autoprecharge 1 V H Precharge All Banks H X L L H L Precharge selected Bank 1 V H Write Note 1,4 H X 1,5 L V 1 X Read Burst Stop H X L H H L X 1 Auto Refresh H H L L L H X 1 Entry H L L L L H H X X X Exit L H L H H H H X X X L H H H Self Refresh Precharge Power Down Mode Active Power Down Mode Entry H 1 X 1 1 L 1 X Exit Entry Exit L H L H X X X 1 L H H H 1 H X X X 1 L V V V H L H X X 1 1 ( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation ) Note : 1. DM states are Don’t Care. Refer to below Write Mask Truth Table. 2. OP Code(Operand Code) consists of A0~A12 and BA0~BA1 used for Mode Registering duing Extended MRS or MRS. Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from Prechagre command. 3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+tRP). 4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time (tWR) is needed to guarantee that the last data has been completely written. 5. If A10/AP is High when Row Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged. Rev. 0.2 / Apr. 2003 14 HYMD232646B8J PACKAGE DIMENSIONS 133.35 5.25 Front Side 131.35 128.95 5.077 3.18 0.125MAX 10.0 0.394 (2X)4.00 0.157 5.171 31.75 1.250 (Front) Rev. 0.2 / Apr. 2003 17.80 0.700 2.30 0.91 1.27+/-0.10 (2) 0 2.5 0.098 0.050+/-.004 15 SERIAL PRESENCE DETECT SPD SPECIFICATION (32Mx64 Unbuffered DDR DIMM) Rev. 0.2 / Apr. 2003 16 HYMD232646B8J SERIAL PRESENCE DETECT Byte# Function Description 0 Number of Bytes written into serial memory at module manufacturer 1 Total number of Bytes in SPD device 2 Fundamental memory type 3 4 5 Bin Sort : J(DDR333@CL=2.5), D4/D43(DDR400@CL=3) Function Supported D43 D4 J Hexa Value D43 128 Bytes D4 Note J 80h 256 Bytes 08h DDR SDRAM 07h Number of row address on this assembly 13 0Dh 1 Number of column address on this assembly 10 0Ah 1 Number of physical banks on DIMM 1Bank 01h 6 Module data width 64 Bits 40h 7 Module data width (continued) - 00h 8 Module voltage Interface levels(VDDQ) 9 DDR SDRAM cycle time at CAS Latency=2.5(tCK)@DDR333, 3(tCK)@DDR400 10 DDR SDRAM access time from clock at CL=2.5 (tAC) 11 Module configuration type 12 Refresh rate and type 13 Primary DDR SDRAM width 14 Error checking DDR SDRAM data width 15 Minimum clock delay for back-to-back random column address(tCCD) 16 Burst lengths supported 17 Number of banks on each DDR SDRAM 18 CAS latency supported 19 CS latency 20 WE latency 21 DDR SDRAM module attributes 22 DDR SDRAM device attributes : General 23 DDR SDRAM cycle time at CL=2.0(tCK), 2.5(tCK) 24 DDR SDRAM access time from clock at CL=2.0(tAC), 2.5(tAC) 25 DDR SDRAM cycle time at CL=1.5(tCK), 2.0(tCK) 26 DDR SDRAM access time from clock at CL=1.5(tAC), 2.0(tAC) SSTL 2.5V 5.0ns 5.0ns 04h 6.0ns 50h 50h +/-0.7ns 70h Non-ECC 00h 7.8us & Self refresh 82h x8 08h N/A 00h 1 CLK 01h 2,4,8 0Eh 4 Banks 2, 2.5, 3 2, 2.5, 3 60h 2 04h 2, 2.5 1Ch 0 1Ch 0Ch 01h 1 02h Differential Clock Input 20h +/-0.2Voltage tolerance, Concurrent Auto Precharge tRAS Lock Out C0h 6ns 6ns 7.5ns 60h 60h 75h 2 +/-0.7ns +/-0.7ns +/-0.7ns 70h 70h 70h 2 7.5ns 7.5ns +/-0.75ns +/-0.75ns - 75h 75h 00h 2 - 75h 75h 00h 2 27 Minimum row precharge time(tRP) 15ns 18ns 18ns 3Ch 48h 48h 28 Minimum row activate to row active delay(tRRD) 10ns 10ns 12ns 28h 28h 30h 29 Minimum RAS to CAS delay(tRCD) 15ns 18ns 18ns 3Ch 48h 48h 30 Minimum active to precharge time(tRAS) 40ns 40n 42ns 28h 28h 2Ah 31 Module row density 32 Command and address signal input setup time(tIS) 0.6ns 0.6ns 0.75ns 60h 60h 75h 33 Command and address signal input hold time(tIH) 0.6ns 0.6ns 0.75ns 60h 60h 75h 34 Data signal input setup time(tDS) 0.4ns 0.4ns 0.45ns 40h 40h 45h 35 Data signal input hold time(tDH) 0.4ns 0.4ns 0.45ns 40h 40h 45h 256MB 36~40 Reserved for VCSDRAM 41 Minimum active / auto-refresh time ( tRC) 40h Undefined 00h 55ns 58ns 60ns 37h 3Ah 3Ch 42 Minimum auto-refresh to active/auto-refresh command period(tRFC) 70ns 70ns 72ns 46h 46h 48h 43 Maximum cycle time (tCK max) 10ns 10ns 12ns 28h 28h 30h 44 Maximim DQS-DQ skew time(tDQSQ) 0.4ns 0.4ns 0.45ns 28h 28h 2Dh 45 Maximum read data hold skew factor(tQHS) 0.50ns 0.50ns 0.55ns 50h 50h 55h 46~61 Superset information(Reserved for IDD values, Tcase, etc.) Undefined 00h 62 SPD Revision code 63 Checksum for Bytes 0~62 64 Manufacturer JEDEC ID Code Hynix JEDEC ID ADh 65~71 --------- Manufacturer JEDEC ID Code - 00h Rev. 0.2 / Apr. 2003 2 Initial release - 00h 66h 81h 00h 17 HYMD232646B8J SERIAL PRESENCE DETECT Byte # Function Description - continued Function Supported D43 D4 J Hexa Value D43 D4 Hynix(Korea Area) HSA(United States Area) HSE(Europe Area) HSJ(Japan Area) Singapore Asia Area 0*h 1*h 2*h 3*h 4*h 5*h 48h J Note 72 Manufacturing location 73 Manufacture part number(Hynix Memory Module) H 74 -------- Manufacture part number(Hynix Memory Module) Y 59h 75 -------- Manufacture part number(Hynix Memory Module) M 4Dh 76 Manufacture part number (DDR SDRAM) D 44h 77 Manufacture part number(Memory density) 2 32h 78 Manufacture part number(Module Depth) 3 33h 79 ------- Manufacture part number(Module Depth) 2 32h 80 Manufacture part number(Module type) Blank 20h 81 Manufacture part number(Data width) 6 36h 82 -------Manufacture part number(Data width) 4 34h 83 Manufacture part number(Refresh, # of Bank.) 6(8K refresh,4Bank) 36h 84 Manufacture part number(Component Generation) B 42h 85 Manufacture part number(Component configuration) 8 38h 86 Manufacture part number(Module Type) J 4Ah 87 Manufacture part number(Hyphen) 88 Manufacture part number(Minimum cycle time) D D J 44h 44h 89 Manufacture part number(Minimum cycle time) 4 4 Blank 34h 34h 20h 90 Manufacture part number(Minimum cycle time 3 Blank Blank 33h 20h 20h 91 Manufacture revision code(for Component) - 92 Manufacture revision code (for PCB) - - 93 Manufacturing date(Year) - - 94 Manufacturing date(Week) - - 3 95~98 Module serial number - - 4 99~127 Manufacturer specific data (may be used in future) Undefined 00h 5 Undefined 00h 5 128~255 Open for customer use ‘-’ 6 2Dh 4Ah 3 Note : 1. The bank address is excluded 2. These value is based on the component specification 3. These bytes are programmed by code of date week & date year 4. These bytes apply to Hynix’s own Module Serial Number system 5. These bytes undefined and coded as ‘00h’ 6. Refer to Hynix web site Rev. 0.2 / Apr. 2003 18