R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QV Common Source The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 300 W .6°C/W 65V ±20V -65 to +200°C +200°C ELECTRICAL CHARACTERISTICS @ 25°°C PER SIDE SYMBOL CHARACTERISTICS ΒVdss Idss Drain-Source Breakdown Drain-Source Leakage Current Vgs = 0V, Id = 2ma Vds = 28V, Vgs= 0V Igss Gate-Source Leakage Current Vgs = 20V, Vds = 0V Vgs(th) Vds(on) gFS Crss Coss Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Reverse Transfer Capacitance Output Capacitance This part is input matched. TEST CONDITIONS Vds = 10V, Id = 100ma Vgs = 10V, Id = 3A Vds = 10V, Id = 3A Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz MIN TYP 65 70 2 4 0.7 2.2 5 60 MAX UNITS V 1 A 1 A 5 V V S pF pF FUNCTIONAL CHARACTERISTICS @ 25°°C GPS Common Source Power Gain ηd Drain Efficiency IMD3 Intermodulation Distortion, 3rd Order Ψ Load Mismatch Vds = 28V, Idq = 0.6A, F = 900MHz, Pout = 120W Vds = 28V, Idq = 0.6A, F = 900MHz, Pout = 120W Vds = 28V, Idq = 0.6A, Pout=120W PEP, F1 = 900 MHz, F2 = 900.1 MHz Vds = 28V, Idq = 0.6A, F = 900MHz, Pout = 120W 13 dB 50 % -30 dBc 5:1 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120