1819AB4 4 Watts, 25 Volts, Class AB Personal 1808 - 1880 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819AB4 is a COMMON EMITTER transistor capable of providing 4 Watts of Class AB, RF output power over the band 1808-1880 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS BASE STATION amplifier applications. It includes Input prematching and utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide high reliability and supreme ruggedness. . 55CT, STYLE 2 COMMON EMITTER ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 20 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 60Volts 3.5 Volts 1.5 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance ηc VSWR1 BVces BVebo Ices hFE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Collector Leakage Current DC - Current Gain Output Capacitance Thermal Resistance TEST CONDITIONS MIN F =1880 MHz Vce = 25 Volts Icq = 0.100 Amps As Above 3.2 Ic = 50 mA Ie = 10 mA Vce = 27 Volts 60 3.5 Vce = 5 V, Ic = 0.100 A F =1 MHz, Vcb = 28 V 20 Tc = 25oC TYP MAX .38 9.3 10.0 43 UNITS Watt Watt dB % 3:1 1.0 100 5.5 6.0 Volts Volts mA pF C/W o Initial Issue February 1995 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120