IFE80-06 FULL POWER SEMICONDUCTOR 8A FAST EFFICIENT RECTIFIER FEATURES l Low power loss, high efficiency l Low forward voltage drop l High current capability l High speed switching l High reliability l High current surge l Glass passivated chip junction l Plastic material has UL flammability classification 94V-0 J B O C D 1 2 L F H MECHANICAL DATA l Case：JEDEC ITO-220 molded plastic. l Lead：Solderable per MIL-STD-202, method 208 l Mounting position：Any l Weight： 1.81 grams K E M I B C D E F G H I J K L M O Millimeters MIN MAX 9.72 10.27 6.30 6.90 15.50 14.50 13.00 13.80 4.1 4.95 5.20 1.52 0.9 4.8 3.1 2.5 2.9 0.8 Ø 3.0 Ø 3.4 G PIN 1 PIN 2 CASE: ITO-220 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO Peak Forward Surge Current, 8.3ms Single Half Sine-Wave IFSM Superimposed on Rated Load Typical Junction Capacitance (Note 1) CJ Typical Thermal Resistance (Note 2) ROJA Operating Temperature Range TOP Storage Temperature Range TSTG Maximum Forward Voltage at IO DC VF IR Maximum Reverse Current at TA = 25℃ I Maximum Reverse Current at TA = 100℃ R Maximum Reverse Recovery Time (Note 3) TRR NOTE： 1. Measured at 1 MHz and applied reverse voltage of 4.0 volts 2. Both leads attached to heat sink 20×20×1t(mm) copper plate at lead length 5mm 3. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A IFE80-06 600 420 600 8.0 UNITS V V V A 150 A 60 2.2 - 55 TO + 150 -55 TO + 150 1.85 10 100 25 pF ℃/W ℃ ℃ V µA µA nS RATINGS AND CHARACTERISTIC CURVE IFE80-06 Fig. 1 -Test Circuit Diagram And Reverse Recovery Time Characteristic 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE Trr (-) +0.5A D.U.T. Pulse Generator ( Note 2 ) (+) 25 Vdc (approx) 1Ω NON INDUCTIVE (-) Oscilloscope ( Note 1 ) 0 -0.25A (+) -1.0A Note: 1. Rise time=7ns Max. Input Impedance=1 Meg-ohm 22pF 2. Rise Time =10 ns Max. Source Impedance=50 ohms 1cm Set Time Base For 10/20 ns/cm Fig. 3 -Typical Instantaneous Forward Characteristics 100 Instantaneous Forward Current, A Average Forward Rectified Current, A Fig. 2 -Maximum Forward Current Derating Curve 10 8 6 5 4 2 Single Phase Half Wave 60Hz Resistive or Inductive Load 0 10 1.0 .1 .01 25 50 75 100 125 150 175 0 .2 Ambient Temperature (℃ ℃) Fig. 4 -Typical Reverse Characteristics .6 .8 1.0 1.2 1.4 1.6 1.8 Fig. 5 -Typical Junction Capacitance 200 1000 100 Junction Capacitance, pF Instantaneous Reverse Current, uA .4 Instantaneous Forward Voltage, V 100 TJ=125oC 10 TJ=80oC 1 TJ=25oC 40 60 20 TJ=25oC 10 6 4 2 0.1 20 40 80 100 120 140 Percent of Rated Peak Reverse Voltage, % 1 .1 .2 .4 1.0 2 4 10 20 40 Reverse Voltage, V 100