TECHNICAL DATA 100mA ADJUSTABLE OUTPUT, POSITIVE VOLTAGE REGULATOR IC Features • • PIN CONNECTIONS • Output Current in Excess of 100mA Output Adjustable Between 1.2 V and 37 V Internal Shot Circuit Current Limiting Internal Thermal Overload Protection Output Transistor Safe-Area Compensation Floating Operation for High Voltage Applications Standard 3-Lead Transistor Package • Eliminates Stocking Many Fixed Voltages • • • • IL317L ABSOLUTE MAXIMUM RATINGS Input - Output Voltage Differential Operating Junction Temperature Range SOT-89 TO-92 ADJUST OUTPUT 1. INPUT 2. OUTPUT 3. ADJUST INPUT 40 V -40°C to +125°C from power supply filter. **Co is not needed for stability, however, it does improve transient response. Vout = 1.25 V (1+R2/R1) + IAdjR2 Since IAdj is controlled to less than 100µA, the error associated with this term is negligible in most applications. Rev. 00 IL317L ELECTRICAL CHARACTERISTICS DIE ON WAFER (VI - Vo = 3.0V, IO = 40mA, TA=25°C, unless otherwise noted, Imax and Pmax (Note 1) CHARACTERISTIC Reference Voltage (TA= -10°C to +125°C) Line Regulation (Note 2) Line Regulation (TA= -10°C to +125°C), (Note 2) . Load Regulation, (Note 2) Load Regulation (TA= -10°C to +125°C), (Note 2) Adjustment Pin Current Adjustment Pin Current Change Symbol VO ΔVOV ΔVOV TEST CONDITION 3.0V≤ VI-Vo ≤40V 10mA≤ Io ≤ Imax, PD ≤ Pmax 3.0V≤ VI-Vo ≤40V, Io=10mA 3.0V≤ VI-Vo ≤40V, Io=10mA ΔVOI ΔVOI 10mA≤ Io ≤ Imax, VO = 5.0V 10mA≤ Io ≤ Imax, VO = 5.0V Maximum Output Current IO MAX Minimum Load Current to Maintain Regulation VO=1.2V, f=120Hz Ripple Rejection IL MIN 3.0V≤ VI-Vo ≤40V 10mA≤ Io ≤ Imax, PD ≤ Pmax VI-VO =3.0V, PD ≤ Pmax VI-VO = 40V, PD ≤ Pmax VI-Vo ≤40V RR Vo = 1.2V, f= 120Hz IAdj ΔIAdj Min 1.2 Max 1.3 Unit V 160 180 mV mV 6.0 10 mV mV 10 100 5.0 µA µA 0.1 0.025 0.3 0.15 10 A 66 mA dB Notes: 1. Imax=100mA, Pmax=625mW; 2. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty cycle is used. Fig.1 Test Circuit for Vo>1.25V Сi=0,1μF, Сo=1,0 μF. Vo=1,25(1+R2/R1)IADJ R2 Fig.2 Test Circuit for Vo=1.25V Сi=0,1μF, Сo=1,0 μF. Rev. 00 IL317L Rev. 00 IL317L Rev. 00