IPS IPT20Q08-CEB

IPT20Q08-xxB
IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT20Q08-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
20
A
VDRM / VRRM
800
V
VTM
≤ 1.65
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Symbol
Value
Unit
Tstg
Tj
-40 to +150
-40 to +125
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
VDSM
VRSM
900
900
V
RMS on–state current
(360º conduction angle )
Tc = 70℃
IT(RMS)
20
A
ITSM
210
200
A
I²t
200
A²s
dI / dt
20
100
A/us
IGM
8
A
PG(AV)
1
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t = 8.3ms
t = 10ms
tp = 10ms
Critical Rate of rise of on-state current
Gate supply : IG = 500mA dIG/dt = 1A/us
Repetitive F = 50Hz
Non repetitive
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
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IPT20Q08-xxB
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPT20Q08-xxB
Symbol
Test Condition
Quadrant
IGT
VD = 12V RL = 30Ω
VGT
VD=VDRM, RL=3.3KΩ,
VGD
Tj = 125 ℃
TE
MAX
1.3
V
ALL
MIN
0.2
V
30
40
40
80
MAX
mA
mA
IT = 100mA
MAX
25
35
mA
VD = 67% VDRM gate open Tj = 125 ℃
MIN
40
200
V/us
(dV/dt) c = 0.1V/us Tj = 125 ℃
(dV/dt) c = 10V/us Tj = 125 ℃
(dI/dt)c
25
50
ALL
II
dV/dt
10
Unit
MAX
IG = 1.2 IGT
IH
CE
I – II – III
IV
I – III – IV
IL
SE
8.5
MIN
3.0
Without snubber Tj = 125 ℃
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value (MAX)
Unit
VTM
ITM = 28A, tp = 380uS
Tj = 25 ℃
1.65
V
IDRM
VD = VDRM
Tj = 25 ℃
20
uA
IRRM
VR = VRRM
Tj = 125 ℃
3
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case (AC)
1.3
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
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IPT20Q08-xxB
PACKAGE MECHANICAL DATA
TO-220B
Millimeters
Min
Typ
Max
A
4.4
4.6
B
0.61
0.88
C
0.46
0.70
C2
1.23
1.32
C3
2.4
2.72
D
8.6
9.7
E
9.8
10.4
F
6.2
6.6
G
4.8
5.4
H
28
29.8
L1
3.75
L2
1.14
1.7
L3
2.65
2.95
V
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
3
IPT20Q08-xxB
IPT20Q08-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
4