IP Semiconductor Co., Ltd. IPS820-xxF IPS820 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. IPS820 series are suitable for general purpose applications, a high gate sensitivity is required. MAIN FEATURES Symbol Value Unit IT(RMS) 20 A IT(AV) 12 A VDRM / VRRM 800 V VTM ≤ 1.6 V TO-220F ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit RMS on–state current (Tc = 100℃, 180º conduction half sine wave) IT(RMS) 20 A Average on–state current (Tc = 100℃, 180º conduction half sine wave) IT(AV) 12 A Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ VDRM VRRM 800 800 V VDSM VRSM 900 900 V ITSM 200 A I²t 200 A²s dI/dt 50 A/us IGM 5 A PG(AV) 1 W Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ One cycle Non Repetitive surge current ( Half Cycle, 50Hz) I²t Value for fusing (tp = 10ms, Half Cycle) Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) Peak gate current tp = 20us, Tj = 125℃ Average gate power dissipation Tj = 125℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 1 IPS820-xxF ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPS820-xxB Symbol Test Condition Unit 30 IGT Required DC gate current to trigger at 25℃ at - 40℃ at 125℃ VGT Required DC voltage to trigger at 25℃ (anode supply = 6V, resistive load) at - 40℃ at 125℃ VGD DC gate voltage not to trigger (Tj = 125℃, VDRM = rated value) MAX 30 55 15 mA MAX 1.3 2.0 1.1 V MAX 0.2 V IL IG = 1.2 IGT MAX 70 mA IH Holding current MAX 50 mA VD = 67% VDRM gate open Tj = 125 ℃ MIN 300 V/us dV/dt STATIC CHARACTERISTICS Symbol VTM Test Conditions Value (MAX) Unit ITM = 30A, tp = 380uS Tj = 25℃ 1.6 V VD = VDRM Tj = 25℃ 5 uA VR = VRRM Tj = 125℃ 2 mA Value Unit 4.0 ℃/W IDRM / IRRM THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case TO-220F 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 2 IPS820-xxF PACKAGE MECHANICAL DATA TO-220F Dimensions Ref Millimeters Min Typ Inches Max Min 4.8 0.173 0.83 0.029 Typ Max A 4.4 B 0.74 C 0.5 0.75 0.020 0.030 C2 2.4 2.7 0.094 0.106 C3 2.6 3 0.102 0.118 D 8.8 9.3 0.346 0.367 E 9.7 10.3 0.382 0.406 F 6.4 6.8 0.252 0.268 G 5 5.2 0.197 0.205 H 28.0 29.8 11.0 11.7 L1 L2 0.8 3.63 1.14 0.189 0.031 0.033 0.143 1.7 0.044 0.067 L3 3.3 0.130 V1 40º 40º 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, [email protected] 3 IPS820-xxF 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 4