IPT2006-xxA IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT2006-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT2006-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. The IPT2006-xxA (Insulated version) series are isolated internally they provides a 2500V RMS isolation voltage from all three terminals to external heatsink . TO-220A MAIN FEATURES Symbol Value Unit IT(RMS) 20 A VDRM / VRRM 600 V VTM ≤ 1.65 V ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Symbol Value Unit Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Tj = 25℃ VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25℃ VDSM VRSM 700 700 V RMS on–state current (360º conduction angle ) Tc = 90℃ IT(RMS) 20 A ITSM 210 200 A I²t 200 A²s dI / dt 20 100 A/us IGM 8 A PG(AV) 1 W Non repetitive surge peak on–state Current (full cycle, Tj = 25℃) I²t Value for fusing t = 8.3ms t = 10ms tp = 10ms Critical Rate of rise of on-state current Gate supply : IG = 500mA dIG/dt = 1A/us Repetitive F = 50Hz Non repetitive Peak gate current tp = 20us, Tj = 125 ℃ Average gate power dissipation Tj = 125 ℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected] 1 IPT2006-xxA ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) Symbol IGT VGT VGD IL Test Condition IPT2006-xxA Quadrant VD = 12V RL = 33Ω Tj = 25 ℃ VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ dV/dt 50 35 50 I – II – III MAX 1.5 V I – II – III MIN 0.2 V 50 50 70 100 60 80 MAX mA mA IT = 500mA Gate open MAX 50 50 75 mA VD = 67% VDRM gate open Tj = 125 ℃ MIN 400 250 500 V/us - - - - - - - 18 11 (dV/dt) c=0.1V/us Tj = 125 ℃ (dI/dt)c DE MAX II IH CE I – II – III I – III IG = 1.2 IGT, Tj = 125 ℃ Unit BE (dV/dt) c=10V/us Tj = 125 ℃ MIN Without snubber Tj = 125 ℃ A/ms STATIC CHARACTERISTICS Symbol Test Conditions Value (MAX) Unit VTM ITM = 28A, t p = 380uS Tj = 25 ℃ 1.65 V IDRM VD = VDRM Tj = 25 ℃ 20 uA IRRM VR = VRRM Tj = 125 ℃ 3 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j – c) Junction to case (AC) 2.1 ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected] 2 IPT2006-xxA PACKAGE MECHANICAL DATA TO-220A Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5.4 H 28 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 3 IPT2006-xxA IPT2006-xxA 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected] 4