isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VBE= 0 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i ww w UNIT 450 V 400 V 5 V 10 A IC Collector Current ICM Collector Current-peak 15 A IB Base Current 5 A PC Collector Power Dissipation @TC=25℃ 55 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W isc Website：www.iscsemi.cn BU921PFI isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU921PFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 140mA 2.5 V ICES Collector Cutoff Current VCE= 450V; VBE= 0 VCE= 450V; VBE= 0;Tj= 125℃ 0.25 0.5 mA ICEO Collector Cutoff Current 0.25 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA VECF C-E Diode Forward Voltage IF= 7A 2.5 V B B B n c . i m e isc Website：www.iscsemi.cn VCE= 400V; IB= 0 TYP. MAX 400 B s c s i . w w w MIN UNIT V