ISC BDX85A

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BDX85/A/B/C
DESCRIPTION
·High DC Current Gain: hFE= 750(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A
80V(Min)- BDX85B; 100V(Min)- BDX85C
·Complement to Type BDX86/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
VALUE
BDX85
45
BDX85A
60
Collector-Base Voltage
UNIT
n
c
.
i
m
e
V
s
c
s
i
.
w
BDX85B
80
BDX85C
100
w
w
BDX85
45
BDX85A
60
BDX85B
80
BDX85C
100
Collector-Emitter Voltage
V
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current
100
mA
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
200
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
1.75
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BDX85/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-Emitter
Sustaining Voltage
CONDITIONS
MIN
BDX85
45
BDX85A
60
TYP.
MAX
IC= 100mA; IB= 0
UNIT
V
BDX85B
80
BDX85C
100
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 16mA
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 8A; IB= 40mA
4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A; IB= 80mA
4.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 3V
2.8
V
BDX85
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150℃
0.5
5.0
BDX85A
VCB= 60V; IE= 0
VCB= 60V; IE= 0; TC= 150℃
0.5
5.0
BDX85B
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150℃
0.5
5.0
BDX85C
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150℃
0.5
5.0
BDX85
VCE= 22V; IB= 0
BDX85A
VCE= 30V; IB= 0
BDX85B
VCE= 40V; IB= 0
BDX85C
VCE= 50V; IB= 0
ICBO
ICEO
Collector
Cutoff Current
B
B
n
c
.
i
m
e
s
c
is
B
.
w
w
w
Collector
Cutoff Current
mA
B
B
1.0
mA
2.0
mA
B
B
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 3V
1000
hFE-2
DC Current Gain
IC= 4A; VCE= 3V
750
hFE-3
DC Current Gain
IC= 8A; VCE= 4V
200
isc Website:www.iscsemi.cn
2
18000