4N29, 4N30, 4N31, 4N32, 4N33 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT Dimensions in mm 2.54 APPROVALS l UL recognised, File No. E91231 6.9 6.1 8.9 max. DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available 1 6 2 5 3 4 8.3 max. 5.3 max. 1.4 0.9 2.54 min. 0.48 15° max. 0.25 l APPLICATIONS Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances l ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 80mA 5V 100mW OUTPUT TRANSISTOR OPTION SM OPTION G SURFACE MOUNT 8.3 max Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 30V 50V 5V 150mW POWER DISSIPATION 1.2 0.6 10.2 9.5 1.4 0.9 0.26 Total Power Dissipation 250mW (derate linearly 3.3mW/°C above 25°C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 5/2/03 DB90048-AAS/A4 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) V IF = 50mA 10 µA VR = 6V 100 V V V nA IC = 1mA (note 2) IC = 100µA IE = 100µA VCE = 10V mA mA mA 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE V V 8mA IF , 2mA IC 8mA IF , 2mA IC VRMS VPK Ω (note 1) (note 1) VIO = 500V (note 1) 5 µs 100 40 µs µs VCC = 10V, IC= 50mA, IF = 200mA , Pulse Width = 1ms fig.1 Collector Output Current ( IC ) (Note 2) 4N32, 4N33 50 4N29, 4N30 10 4N31 5 Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO 1.0 1.2 5300 7500 5x1010 Output Turn on Time ton Output Turn off Time 4N32, 4N33 toff 4N29, 4N30, 4N31 Note 1 Note 2 1.5 30 50 5 Collector-emitter Saturation VoltageVCE(SAT) 4N29,4N30,4N32,4N33 4N31 TEST CONDITION Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 10V Input IF = 200mA, Pulse width = 1ms ton toff IC = 50mA tr Input 5/2/03 Output tf Output 10% 10% 90% 90% DB90048-AAS/A4 Collector Power Dissipation vs. Ambient Temperature Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) Collector power dissipation PC (mW) 200 150 100 50 10000 5000 0 1000 800 500 100 50 VCE = 10V TA = 25°C 10 0 -30 0 25 50 75 100 0.1 0.2 0.5 125 Forward Current vs. Ambient Temperature 10 20 50 100 50mA 100 TA = 25°C 20 Collector current IC (mA) 80 Forward current IF (mA) 5 Collector Current vs. Collector-emitter Voltage 100 60 40 20 0 10mA 5mA 80 60 40 2mA 20 IF = 1mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( °C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 1.2 2 3 4 5 Relative Current Transfer Ratio vs. Ambient Temperature IF = 8mA IC = 2mA 1.0 1 Collector-emitter voltage VCE ( V ) Relative current transfer ratio Collector-emitter saturation voltage VCE(SAT) (V) 2 Forward current IF (mA) Ambient temperature TA ( °C ) 0.8 0.6 0.4 0.2 0 1.5 IF = 10mA VCE = 10V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 5/2/03 1 100 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 DB90048-AAS/A4