MCT210 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 2.54 APPROVALS l UL recognised, File No. E91231 6.4 6.2 DESCRIPTION The MCT210 optically coupled isolator consists of an infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances 6 5 3 4 1.54 8.8 8.4 0.5 0.5 7.8 7.4 4.3 4.1 l l 1 2 0.3 3.3 9.6 8.4 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR OPTION SM SURFACE MOUNT Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation OPTION G 30V 30V 6V 160mW POWER DISSIPATION 5.08 max. 1.2 0.6 10.2 9.5 1.4 0.9 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB91089-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 1.2 10 V V µA IF = 40mA IR = 10µA VR = 6V Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 30 V IC = 1mA 30 6 V V nA IC = 10µA IE = 100µA VCE = 10V Current Transfer Ratio (CTR) 50 % 150 % 3.2mA IF to 32mAIF , 0.4V VCE 10mA IF , 5V VCE V 32mA IF , 16mA IC VRMS VPK See note 1 See note 1 Ω VIO = 500V (note 1) µs µs VCC = 5V , fig 1 IC= 2mA, RL = 100Ω 50 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 0.4 5300 7500 Input-output Isolation Resistance RISO 5x1010 Rise Time Fall Time Note 1 Note 2 1.5 TEST CONDITION tr tf 4 5 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 100Ω tr Output tf Output 10% 10% 90% 90% FIG 1 7/12/00 DB91089-AAS/A2 Relative Current Transfer Ratio vs. Forward Current Collector Power Dissipation vs. Ambient Temperature 2.8 Relative current transfer ratio Collector power dissipation P C (mW) 200 150 100 50 2.4 2.0 1.6 1.2 0.8 VCE = 0.4V TA = 25°C 0.4 0 -30 0 25 50 75 100 1 125 2 10 20 50 Forward current IF Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 80 320 70 280 Current transfer ratio CTR (%) Forward current I F (mA) 5 60 50 40 30 20 10 VCE = 5V TA = 25°C 240 200 160 120 80 40 0 0 50 75 100 5 10 20 Collector-emitter Saturation Voltage vs. Ambient Temperature (V) Relative Current Transfer Ratio vs. Ambient Temperature 1.0 0.5 0 25 50 75 Ambient temperature TA ( °C ) 100 Collector-emitter saturation voltage V IF = 10mA VCE = 5V -30 2 Forward current IF (mA) 0 7/12/00 1 125 Ambient temperature TA ( °C ) 1.5 Relative current transfer ratio 25 CE(SAT) -30 50 0.56 0.48 IF = 32mA IC = 16mA 0.40 0.32 0.24 0.16 0.08 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 DB91089-AAS/A2