MOC8106X, MOC8107X, MOC8108X MOC8106, MOC8107, MOC8108 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS z UL recognised, File No. E91231 Package Code " EE " 'X' SPECIFICATIONAPPROVALS VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 z 2.54 7.0 6.0 Dimensions in mm 6 1 2 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 13° Max 0.5 DESCRIPTION The MOC8106, MOC8107, MOC8108 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z Base pin unconnected for improved noise immunity in high EMI environment APPLICATIONS z DC motor controllers z Industrial systems controllers z Signal transmission between systems of different potentials and impedances 3.0 0.5 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 120mW OUTPUT TRANSISTOR OPTION SM SURFACE MOUNT 1.2 0.6 10.2 9.5 OPTION G Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 70V 7V 160mW 7.62 POWER DISSIPATION 1.4 0.9 0.26 Total Power Dissipation 200mW (derate linearly 2.94mW/°C above 25°C) 10.16 ISOCOMCOMPONENTSLTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 18/2/09 DA92586 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS TEST CONDITION Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 1.0 6 1.15 V V μA IF = 10mA IR = 10μA VR = 6V Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 70 V IC = 1mA V nA IE = 100μA VCE = 10V Output Collector Current IC (CTR) ( Note 2&3 ) MOC8106 MOC8107 MOC8108 10 6 1.0 5.0(50) 10(100) 25(250) Collector-emitter SaturationVoltageVCE (SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Turn-on Time ton Turn-off Time toff Output Rise Time tr Output Fall Time tf Note 1 Note 2 Note 3 18/2/09 1.5 50 15(150) mA(%) 30(300) mA(%) 60(600) mA(%) 0.15 0.4 5300 7500 5x1010 7.5 5.7 3.2 4.7 20 20 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE V 5mA IF , 0.5mA IC VRMS VPK Ω μs μs μs μs See note 1 See note 1 VIO = 500V (note 1) VCC = 10V , IC = 2mA, RL = 100Ω Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. Production testing - limits verified with pulse test DA92586 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 150 100 50 50 30 40 20 30 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 0 100 125 70 60 50 40 30 20 10 0 25 50 75 100 125 Ambient temperature TA ( °C ) Collector-emitter saturation voltage VCE(SAT) (V) 80 0 4 6 8 10 Collector-emitter Saturation Voltage vs. Ambient Temperature Forward Current vs. Ambient Temperature -30 2 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) Forward current IF (mA) TA = 25°C 50 Collector current IC (mA) Collector power dissipation PC (mW) 200 0.28 0.24 IF = 5mA IC = 0.5mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) Relative current transfer ratio Relative Current Transfer Ratio vs. Ambient Temperature 1.5 IF = 10mA VCE = 10V 1.0 0.5 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) 18/2/09 DA92586