MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l BSI approved - Certificate No. 8001 7.0 6.0 FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Base pin unconnected for improved noise immunity in high EMI environment l 1 2 6 5 3 4 1.2 7.62 6.62 DESCRIPTION The MOC8111, MOC8112, MOC8113 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. Dimensions in mm 2.54 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR OPTION SM OPTION G SURFACE MOUNT 7.62 Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 30V 6V 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 31/3/03 DB92197m-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.15 1.5 V IF = 10mA 10 µA VR = 6V V IC = 1mA V nA IE = 100µA VCE = 10V mA mA mA 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE V 10mA IF , 0.5mA IC Input to Output Isolation Voltage VISO 5300 7500 VRMS VPK See note 1 See note 1 Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1) µs µs VCC = 5V , IF = 10mA RL = 75Ω (FIG 1) Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Output Collector Current ( IC ) MOC8111 MOC8112 MOC8113 30 6 50 2 5 10 Collector-emitter Saturation VoltageVCE (SAT) Response Time (Rise), tr Response Time (Fall), tf Note 1 Note 2 TEST CONDITION 0.15 2 2 0.4 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE1 31/3/03 DB92197m-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage TA = 25°C 50 Collector current IC (mA) Collector power dissipation PC (mW) 200 150 100 50 50 30 40 20 30 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 Forward Current vs. Ambient Temperature 70 280 Current transfer ratio CTR (%) 320 60 50 40 30 20 0 8 10 VCE = 10V TA = 25°C 240 200 MOC8113 160 120 MOC8112 80 MOC8111 40 0 -30 0 25 50 75 100 1 125 2 Ambient temperature TA ( °C ) Collector-emitter saturation voltage VCE(SAT) (V) 1.5 IF = 10mA VCE = 10V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 5 10 20 50 Forward current IF (mA) Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio 6 Current Transfer Ratio vs. Forward Current 80 10 31/3/03 4 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) Forward current IF (mA) 2 100 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.14 0.12 IF = 10mA IC = 0.5mA 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB92197m-AAS/A2