TLP626, TLP626-2,TLP626-4 LOW INPUT CURRENT A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 TLP626 7.0 6.0 DESCRIPTION The TLP626, TLP626-2, TLP626-4 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l Low input current ± 0.5mA IF l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l AC or polarity insensitive input l All electrical parameters 100% tested l Custom electrical selections available Dimensions in mm 2.54 1 4 2 3 1.2 5.08 4.08 7.62 4.0 3.0 13° Max 0.5 3.0 0.26 0.5 TLP626-2 3.35 2.54 7.0 6.0 APPLICATIONS l Computer terminals l Industrial systems controllers l Telephone sets, Telephone exchangers l Signal transmission between systems of different potentials and impedances 1.2 10.16 9.16 1 8 2 7 3 4 6 5 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 0.26 3.35 1 16 15 2 TLP626-4 3 14 4 13 5 7.0 6.0 6 7 8 12 2.54 OPTION SM OPTION G 1.2 7.62 SURFACE MOUNT 20.32 19.32 0.6 0.1 10.46 9.86 1.25 0.75 9 7.62 4.0 3.0 13° Max 0.5 0.26 10.16 11 10 3.0 0.5 3.35 0.26 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92549m-AAS /A1 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Power Dissipation ± 50mA 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 55V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Forward Voltage (VF) 1.0 Output Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 55 6 Current Transfer Ratio (CTR) (Note 2) Low Input CTR 100 50 Coupled 1.15 100 Collector-emitter Saturation VoltageVCE (SAT) 0.2 Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Rise Time Fall Time Turn-on Time Turn-off Time Note 1 Note 2 7/12/00 tr tf ton toff 1.3 8 8 10 8 TEST CONDITION V IF = ± 10mA V IC = 0.5mA V nA IE = 100µA VCE = 24V 1200 % % ± 1mAIF , 0.5V VCE ± 0.5mAIF,1.5V VCE 0.4 V V ± 1mAIF , 0.5mAIC ± 1mAIF , 1mAIC VRMS VPK See note 1 See note 1 Ω VIO = 500V (note 1) µs µs µs µs VCC = 10V , IC= 2mA, RL= 100Ω Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92549m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Relative current transfer ratio Collector power dissipation P C (mW) 200 150 100 50 IF = ± 0.5mA VCE = 1.5V 1.0 0.5 0 0 -30 0 25 50 75 100 -30 125 0 25 50 75 Ambient temperature TA ( °C ) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 100 60 Relative current transfer ratio Forward current I F (±mA) 2.8 50 40 30 20 10 VCE = 1.5V TA = 25°C 2.4 2.0 1.6 1.2 0.8 0.4 0 0 -30 0 25 50 75 100 125 0.1 Relative Current Transfer Ratio vs. Ambient Temperature 1.0 2 5 Relative Current Transfer Ratio vs. Forward Current 2.8 IF = ±1mA VCE = 0.5V Relative current transfer ratio Relative current transfer ratio 0.5 Forward current IF (±mA) Ambient temperature TA ( °C ) 1.5 0.2 1.0 0.5 VCE = 0.5V TA = 25°C 2.4 2.0 1.6 1.2 0.8 0.4 0 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 7/12/00 100 0.1 0.2 0.5 1.0 2 5 Forward current IF (±mA) DB92549m-AAS/A1