MICROSEMI 2N6306

TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/498
Devices
Qualified Level
2N6306
JAN
JANTX
JANTXV
2N6308
MAXIMUM RATINGS
Ratings
Symbol
Units
VCEO
VCBO
VEBO
IC
IB
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
2N6306 2N6308
250
350
500
700
8.0
8.0
4.0
@ TC = +250C (1)
125
PT
@ TC = +1000C (1)
62.5
Operating & Storage Temperature Range
-65 to +200
Top, Tstg
1) Between TC = +250C and TC = +1750C, linear derating factor average = 0.833 W/0C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
TO-3 (TO-204AA)*
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
2N6306
2N6308
V(BR)CEO
250
350
2N6306
2N6308
ICEX
5.0
5.0
µAdc
2N6306
2N6308
ICEO
50
50
µAdc
IEBO
5.0
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 mAdc
Collector-Emitter Cutoff Current
VCE = 500 Vdc; VBE = 1.5 Vdc
VCE = 700 Vdc; VBE = 1.5 Vdc
Collector-Emitter Cutoff Current
VCE = 250 Vdc
VCE = 350 Vdc
Emitter-Base Cutoff Current
VEB = 8 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
µAdc
120101
Page 1 of 2
2N6306, 2N6308 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
75
60
hFE
15
12
4
3
15
12
Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 3.0 Adc; VCE = 5.0 Vdc
IC = 8.0 Adc; VCE = 5.0 Vdc
IC = 0.5 Adc; VCE = 5.0 Vdc
Base-Emitter Voltage
VCE = 5.0 Vdc; IC = 3.0 Adc
Base-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 8.0 Adc
IB = 2.67 Adc; IC = 8.0 Adc
Collector-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 8.0 Adc
IB = 2.67 Adc; IC = 8.0 Adc
IB = 0.6 Adc; IC = 3.0 Adc
2N6306
2N6308
2N6306
2N6308
2N6306
2N6308
2N6306
2N6308
VBE(on)
1.3
1.5
Vdc
2N6306
2N6308
VBE(sat)
2.3
2.5
Vdc
2N6306
2N6308
2N6306
2N6308
5.0
5.0
0.8
1.5
VCE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.3 Adc, VCE = 10 Vdc, f = 1 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 4.0 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
5
hfe
Cobo
30
5
250
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 125 Vdc; IC = 3.0 Adc; IB = 0.6 Adc
Turn-Off Time
VCC = 125 Vdc; IC = 3.0 Adc; IB1 = 0.6 Adc; IB2 = 1.5 Adc
t
t
on
off
0.6
µs
3.0
µs
SAFE OPERATING AREA
DC Tests
TC = +250C; t = 1 s, 1 cycle (See Figure 2 and 3 of MIL-PRF-19500/498)
Test 1
VCE = 15.6 Vdc, IC = 8 Adc
Test 2
VCE = 37 Vdc, IC = 3.4 Adc
Test 3
VCE = 200 Vdc, IC = 65 mAdc
2N6306
VCE = 300 Vdc, IC = 25 mAdc
2N6308
2.) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2