MICROSEMI 2N3440

TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
Devices
Qualified Level
2N3439
2N3439L
2N3440
2N3440L
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@TA = 250C(1)
@TC = 250C(2)
Operating & Storage Temperature Range
1)
2)
JANTX
JANTXV
Symbol
2N3439
2N3440
Units
VCEO
VCBO
VEBO
IC
350
450
250
300
Vdc
Vdc
Vdc
Adc
W
W/0C
0
C
PT
Top, Tstg
7.0
1.0
0.8
5.0
-55 to +200
TO- 5*
2N3439L, 2N3440L
Derate linearly 4.57 mW/0C for TA > +250C
Derate linearly 28.5 mW/0C for TC > +250C
TO-39* (TO205-AD)
2N3439, 2N3440
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
350
250
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
Collector-Emitter Cutoff Current
VCE = 300 Vdc
VCE = 200 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
2N3439
2N3440
2N3439
2N3440
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
ICEO
2.0
2.0
µAdc
µAdc
IEBO
10
µAdc
120101
Page 1 of 2
2N3439, L, 2N3440, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
5.0
5.0
µAdc
µAdc
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = -1.5 Vdc
VCE = 300 Vdc, VBE = -1.5 Vdc
Collector-Base Cutoff Current
VCB = 360 Vdc
VCB = 250 Vdc
VCB = 450 Vdc
VCB = 300 Vdc
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
ICEX
2.0
2.0
5.0
5.0
ICBO
µAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 20 mAdc, VCE = 10 Vdc
IC = 2.0 mAdc, VCE = 10 Vdc
IC = 0.2 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 4.0 mAdc
Base-Emitter Saturation Voltage
IC = 50 mAdc, IB = 4.0 mAdc
hFE
40
30
10
160
VCE(sat)
0.5
VBE(sat)
1.3
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
3.0
hfe
25
15
Cobo
10
Cibo
75
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 Vdc; IC = 20 mAdc, IB1= 2.0 mAdc
Turn-Off Time
VCC = 200 Vdc; IC = 20 mAdc, IB1 = -IB2 = 2.0 mAdc
t
t
on
off
1.0
µs
10
µs
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 cycle, t = 1.0 s
Test 1
VCE = 5.0 Vdc, IC = 1.0 Adc
Both Types
Test 2
VCE = 350 Vdc, IC = 14 mAdc
2N3439
Test 3
VCE = 250 Vdc, IC = 20 mAdc
2N3440
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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