TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 Devices Qualified Level 2N3439 2N3439L 2N3440 2N3440L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @TA = 250C(1) @TC = 250C(2) Operating & Storage Temperature Range 1) 2) JANTX JANTXV Symbol 2N3439 2N3440 Units VCEO VCBO VEBO IC 350 450 250 300 Vdc Vdc Vdc Adc W W/0C 0 C PT Top, Tstg 7.0 1.0 0.8 5.0 -55 to +200 TO- 5* 2N3439L, 2N3440L Derate linearly 4.57 mW/0C for TA > +250C Derate linearly 28.5 mW/0C for TC > +250C TO-39* (TO205-AD) 2N3439, 2N3440 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 350 250 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 300 Vdc VCE = 200 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 2N3439 2N3440 2N3439 2N3440 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc ICEO 2.0 2.0 µAdc µAdc IEBO 10 µAdc 120101 Page 1 of 2 2N3439, L, 2N3440, L, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit 5.0 5.0 µAdc µAdc OFF CHARACTERISTICS (con’t) Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 300 Vdc, VBE = -1.5 Vdc Collector-Base Cutoff Current VCB = 360 Vdc VCB = 250 Vdc VCB = 450 Vdc VCB = 300 Vdc 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 ICEX 2.0 2.0 5.0 5.0 ICBO µAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 20 mAdc, VCE = 10 Vdc IC = 2.0 mAdc, VCE = 10 Vdc IC = 0.2 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 50 mAdc, IB = 4.0 mAdc Base-Emitter Saturation Voltage IC = 50 mAdc, IB = 4.0 mAdc hFE 40 30 10 160 VCE(sat) 0.5 VBE(sat) 1.3 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz Forward Current Transfer Ratio IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 3.0 hfe 25 15 Cobo 10 Cibo 75 pF pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 200 Vdc; IC = 20 mAdc, IB1= 2.0 mAdc Turn-Off Time VCC = 200 Vdc; IC = 20 mAdc, IB1 = -IB2 = 2.0 mAdc t t on off 1.0 µs 10 µs SAFE OPERATING AREA DC Tests TC = 250C, 1 cycle, t = 1.0 s Test 1 VCE = 5.0 Vdc, IC = 1.0 Adc Both Types Test 2 VCE = 350 Vdc, IC = 14 mAdc 2N3439 Test 3 VCE = 250 Vdc, IC = 20 mAdc 2N3440 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.