JINANJINGHENG EGP10A

EGP10ATHRU EGP10M
RC
P
G
S E M I C O N D U C T O R
SUPER FAST RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:1.0Ampere
SILICON
RECTIFIER
R
DO-41
FEATURES
GPRC( Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
Low forward voltage drop,High current capability
JF
1.0(25.4)
MIN
High surge current capability
Super fast recovery time
0.107(2.7)
0.080(2.0)
DIA
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.205(5.20)
0.180(4.10)
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026
1.0(25.4)
MIN
Polarity: Color band denotes cathode end
0.034(0.85)
0.028(0.71)
DIA
Mounting Position: Any
Weight: 0.012ounce, 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Dimensions in inches and (millimeters)
(Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive
load. For capacitive load,derate current by 20%.)
Symbols
EGP
10A
EGP
10B
EGP
10D
EGP
10F
EGP
10G
EGP
10J
EGP
10K
EGP
10M
50
100
150
200
400
600
800
1000
35
70
105
140
280
280
280
280
50
100
150
200
400
600
800
1000
Units
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead Length at Ta=55 C
I(AV)
1.0
Amp
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
30.0
Amps
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Instantaneous Forward Voltage
at 1.0 A
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
TA=25 C
VF
0.95
Typical Junction Capacitance(Note2)
Operating Junction and Storage Temperature
Range
Volts
5.0
IR
A
50
TA=100 C
Maximum Reverse Recovery Time(Note1)
1.25
Volts
Volts
Volts
Trr
CJ
35
50
TJ
TSTG
ns
25
-65 to+125
-65 to+150
PF
C
Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts.
8-4
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
(+)
50Vdc
(APPROX)
10
NON INDUCTIVE
+0.5A
PULSE
GENERATOR
(NOTE2)
D.U.T.
(-)
1
NON INDUCTIVE
AVERAGE FORWARD CURRENT (A)
FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50
NON INDUCTIVE
Trr
0
-0.25A
OSCILLOSCOPE
(NOTE1)
-1.0A
NOTES:1.Rise Time=7ns max. input impedance=1
megohm 22pF
2.Rise Time=10ns max. source impedance
=50 ohms
INSTANTANEOUS REVERSE CURRENT ,(mA)
INSTANTANEOUS FORWARD CURRENT( AMPERES)
1
TA=25 C
Pulse Width=300 s
1% Duty Cycle
0.01
0.8
1.0
EGP10J-EGP10M
0
25
50
75
100
125
150
175
FIG.4-TYPICAL REVERSE CHARACTERISTICS
EGP10G
0.6
EGP10A-EGP10G
AMBIENT TEMPERATURE ( C)
EGP10J-EGP10M
0.4
0.5
0
EGP10A-EGP10F
0.2
Single Phase Half Wave 60hz
Resistive or Inductive Load
0.375"(9.5mm) Lead Length
1.0
SET TIME BASE FOR 5/10 ns/cm
10
0
1.5
1cm
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
0.1
SILICON
RECTIFIER
RATINGS AND CHARACTERISTIC CURVES EGP10A THRU EGP10M
1.2
100
TJ=100 C
10
1.0
TJ=25 C
0.1
1.4
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)
FIG.5-MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
FIG.6-TYPICAL JUNCTION CAPACITANCE
35
PEAK FORWARD SURGE
CURRENT(AMPERES)
JUNCTION CAPACITANCE(pF)
175
30
TA=25 C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
20
15
10
EGP10A-EGP10G
5
EGP10J-EGP10M
0
1
5
10
50
150
125
100
75
TJ=25 C
50
25
1
100
0.1
NUMBER OF CYCLES AT 60Hz
0.5
1
2
5
10
20
50
100
REVERSE VOLTAGE. (V)
8-5
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM