EGP30A THRU EGP30M RC P G S E M I C O N D U C T O R SUPER FAST RECTIFIER Reverse Voltage: 50 to 400 Volts Forward Current:3.0Amperes SILICON RECTIFIER Ｒ DO-201AD FEATURES GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction JF Low forward voltage drop,High current capability １．０（２５．４） ＭＩＮ High surge current capability Super fast recovery time ０．２１０（５．３） ０．１９０（４．８） ＤＩＡ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ０．３７５（９．５０） ０．２８５（７．２０） MECHANICAL DATA Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026 １．０（２５．４） ＭＩＮ Polarity: Color band denotes cathode end Mounting Position: Any ０．０５２（１．３２） ０．０４８（１．２２） ＤＩＡ Weight: 0.042ounce, 1.18 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive load. For capacitive load, derate current by 20%.) Symbols Maximum DC Blocking Voltage VRRM VRMS VDC Maximum Average Forward Rectified Current 0.375"(9.5mm)lead Length at Ta=55 C I(AV) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum Instantaneous Forward Voltage at 1.0 A Maximum DC Reverse Current At Rated DC Blocking Voltage TA=25 C EGP 30A EGP 30B EGP 30D EGP 30F EGP 30G EGP 30J EGP 30K EGP 30M 50 100 200 300 400 600 800 1000 35 70 140 210 280 420 480 700 50 100 200 300 400 600 800 1000 115.0 1.0 Typical Junction Capacitance(Note2) Operating Junction and Storage Temperature Range 1.25 105.0 Amps 1.7 Volts 5.0 IR A 100 TA=100 C Maximum Reverse Recovery Time(Note1) Volts Volts Volts Amp 3.0 VF Units Trr CJ 50 75 75 TJ TSTG -65 to+125 -65 to+150 ns PF C Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts. 8-20 JINAN JINGHENG CO., LTD. ＮＯ．５１ ＨＥＰＩＮＧ ＲＯＡＤ ＰＲ ＣＨＩＮＡ ＴＥＬ：８６－５３１－６９４３６５７ ＦＡＸ：８６－５３１－６９４７０９６ WWW.JIFUSEMICON.COM FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE （＋） 50Vdc (APPROX) 10 NON INDUCTIVE ＋０．５Ａ PULSE GENERATOR (NOTE2) D.U.T. （－） 1 NON INDUCTIVE AVERAGE FORWARD CURRENT (A) FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NON INDUCTIVE Ｔｒｒ ０ －０．２５Ａ OSCILLOSCOPE (NOTE1) －１．０Ａ NOTES:1.Rise Time=7ns max. input impedance=1 megohm 22pF 2.Rise Time=10ns max. source impedance =50 ohms ２．５ ２．０ EGP30A-EGP30G １．５ EGＰ３0J-EGＰ３0M １．０ Single Phase Half Wave 60hz Resistive or Inductive Load 0.375"(9.5mm) Lead Length ０．５ １ｃｍ ０ ０ ２５ ５０ ７５ １００ １２５ １５０ １７５ AMBIENT TEMPERATURE ( C) FIG.4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT ,(mA) INSTANTANEOUS FORWARD CURRENT( AMPERES) ３．０ SET TIME BASE FOR 5/10 ns/cm FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS １０ EGP30A-EGP30F EGP30G EGP30J-EGP30M １ TA=25 C Pulse Width=300 s 1% Duty Cycle ０．１ SILICON RECTIFIER RATINGS AND CHARACTERISTIC CURVES EGP30A THRU EGP30M １００ TJ=100 C １０ １．０ TJ=25 C ０．１ ０．０１ ０ ０．２ ０．４ ０．６ ０．８ １．０ １．２ １．４ ０．０１ INSTANTANEOUS FORWARD VOLTAGE (VOLTS) ０ ２０ ４０ ６０ ８０ １００ １２０ １４０ PERCENT OF RATED PEAK REVERSE VOLTAGE(%) FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.6-TYPICAL JUNCTION CAPACITANCE １４０ ２００ JUNCTION CAPACITANCE(pF) PEAK FORWARD SURGE CURRENT(AMPERES) １２０ TA=25 C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) １００ ８０ ６０ ４０ EGP30A-EGP30G ２０ EGP30J-EGP30M ０ １ ５ １０ ５０ １００ １７５ １５０ １２５ １００ ７５ ５０ ２５ NUMBER OF CYCLES AT 60Hz １ ０．１ ０．５ １ ２ ５ １０ ２０ ５０ １００ REVERSE VOLTAGE. (V) 8-21 JINAN JINGHENG CO., LTD. ＮＯ．５１ ＨＥＰＩＮＧ ＲＯＡＤ ＰＲ ＣＨＩＮＡ ＴＥＬ：８６－５３１－６９４３６５７ ＦＡＸ：８６－５３１－６９４７０９６ WWW.JIFUSEMICON.COM