Product Specification www.jmnic.com 2SC1051 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation APPLICATIONS ・For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V 7 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Product Specification www.jmnic.com 2SC1051 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.5A ; VCE=5V VCEsat fT CONDITIONS hFE Classifications C D E F 40-80 60-120 100-200 160-320 2 MIN TYP. 40 MAX UNIT 320 8 MHz Product Specification www.jmnic.com 2SC1051 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3