JMnic Product Specification 2SC1116 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation APPLICATIONS ・For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V 10 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC1116 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 120 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=180V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V Transition frequency IC=1A ; VCE=12V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 50 10 MHz JMnic Product Specification 2SC1116 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3