JMnic Product Specification 2SC2371 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High Voltage ・High frequency APPLICATIONS ・For TV chroma output and vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 0.1 A ICM Collector current-peak 0.2 A PC Collector power dissipation Ta=25℃ 1.25 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ JMnic Product Specification 2SC2371 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-emitter saturation voltage IC=30mA ;IB=3m A 1.5 V Base-emitter on voltage IC=10mA ; VCE=10V 1.2 V V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA; IC=0 6 V hFE DC current gain IC=10mA ; VCE=10V 40 ICBO Collector cut-off current VCB=200V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 μA COB Output capacitance IE=0; VCB=30V;f=1MHz fT Transition frequency IE=10mA ; VCB=30V VBE 2 250 3 50 pF MHz JMnic Product Specification 2SC2371 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3