JMnic Product Specification 2SC3949 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V 15 A 80 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3949 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 850 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V ICBO Collector cut-off current VCE=800V; IE=0 TC=100℃ 0.1 1.0 mA IEBO Emitter cut-off current VEB=6V ;IC=0 0.1 mA hFE DC current gain IC=10A ; VCE=5V fT Transition frequency IC=2A ; VCE=10V 20 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 260 pF 2 MIN TYP. 10 MAX UNIT 30 JMnic Product Specification 2SC3949 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3