TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices Qualified Level 2N6211 2N6212 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation JAN JANTX JANTXV 2N6213 Symbol 2N6211 2N6212 2N6213 Unit VCEO VCBO VEBO IB IC @ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Temperature Top, Tstg 225 275 300 350 350 400 6.0 1.0 2.0 3.0 35 -55 to +200 Vdc Vdc Vdc Adc Adc W W 0 C Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 17.1 mW/0C for TA > +250C 2) Derate linearly 200 mW/0C for TC > +250C TO-66* (TO-213AA) THERMAL CHARACTERISTICS Symbol RθJC Max. 5.0 Unit C/W 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N6211 2N6212 2N6213 V(BR)CEO 225 300 350 Vdc 2N6211 2N6212 2N6213 V(BR)CER 250 325 375 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60 Hz Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω, VBE = -1.5 Vdc 2N6211 2N6212 2N6213 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 V(BR)CEX 275 350 400 Vdc 120101 Page 1 of 2 2N6211, 2N6212, 2N6213 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Collector-Emitter Cutoff Current VCE = 150 Vdc Collector-Emitter Cutoff Current VCE = 250 Vdc, VBE = 1.5 Vdc VCE = 315 Vdc, VBE = 1.5 Vdc VCE = 360 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 275 Vdc VCB = 350 Vdc VCB = 400 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Symbol 2N6211 2N6212 2N6213 2N6211 2N6212 2N6213 Min. Max. Unit ICEO 5.0 mAdc ICEX 0.5 0.5 0.5 mAdc ICBO 15 15 15 mAdc IEBO 0.5 mAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 2.8 Vdc IC = 1.0 Adc, VCE = 3.2 Vdc IC = 1.0 Adc, VCE = 4.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.125 Adc 2N6211 2N6212 2N6213 2N6211 2N6212 2N6213 2N6211 2N6212 2N6213 Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.125 Adc hFE 10 10 10 30 30 30 100 100 100 175 175 150 VCE(sat) 1.4 1.6 2.0 VBE(sat) 1.4 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.2 Adc, VCE = 10 Vdc, f = 5.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 4.0 20 220 pF on 0.6 µs off 3.1 µs Cobo SWITCHING CHARACTERISTICS Turn-On Time VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc Turn-Off Time VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc, IB2 = 0.125Adc t t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 17.5 Vdc, IC = 2.0 Adc All Types Test 2 VCE = 40 Vdc, IC = 0.875 Adc All Types Test 3 VCE = 225 Vdc, IC = 0.034 Adc 2N6211 Test 4 VCE = 300 Vdc, IC = 0.02 Adc 2N6212 Test 5 VCE = 350 Vdc, IC = 0.015 Adc 2N6213 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2