TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices Qualified Level 2N6383 2N6384 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6383 2N6384 2N6385 Unit VCEO VCBO VEBO IB IC @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature JAN, JANTX JANTXV 2N6385 PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 80 80 Vdc Vdc Vdc Adc Adc W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 34.2 mW/0C above TA > +250C 2) Derate linearly 571 mW/0C above TC > +250C Max. 1.75 Unit C/W TO-3* (TO-204AA) 0 *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N6383 2N6384 2N6385 V(BR)CEO 40 60 80 Vdc 2N6383 2N6384 2N6385 V(BR)CER 40 60 80 Vdc 2N6383 2N6384 2N6385 ICBO OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 1.0 1.0 1.0 mAdc 120101 Page 1 of 2 2N6383, 2N6384, 2N6385, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc, VBE = 1.5 Vdc VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Symbol 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 Min. Max. Unit IEBO 5.0 mAdc ICEO 1.0 1.0 1.0 mAdc 0.3 0.3 0.3 mAdc ICEX ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 5.0 Adc, VCE = 3.0 Vdc IC = 10 Adc, VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC = 5.0 Adc, IB = 10 mAdc IC = 10 Adc, IB = 0.1 Adc Base-Emitter Voltage IC = 5.0 Adc, VCE = 3.0 Vdc IC = 10 Adc, VCE = 3.0 Vdc hFE 1,000 100 20,000 VCE(sat) 2.0 3.0 Vdc VBE(on) 2.8 4.5 Vdc DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 20 300 200 pF on 2.5 µs off 10 µs Cobo SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 5.0 Adc; IB1 = 20 mAdc Turn-Off Time VCC = 30 Vdc; IC = 5.0 Adc; IB1 = -IB2 = 20 mAdc t t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 10 Vdc, IC = 10 Adc All Types Test 2 VCE = 30 Vdc, IC = 3.33 Adc All Types Test 3 VCE = 40 Vdc, IC = 1.5 Adc 2N6383 VCE = 60 Vdc, IC = 0.4 Adc 2N6384 VCE = 80 Vdc, IC = 0.16 Adc 2N6385 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2