Product Specification www.jmnic.com 2SC4833 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-Peak 10 A IB Base current 2 A IBM Base current-Peak 4 A PT Total power dissipation 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Vdis Dielectric strength Terminals to case,AC1 minute 2 kV TOR Mounting torque (Recommended torque:0.3N·m) 0.5 N·m MAX UNIT 3.57 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2SC4833 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 400 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Emitter-base saturation voltage IC=2.5A; IB=0.5A 1.5 V At rated volatge 0.1 mA 0.1 mA ICBO Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated volatge hFE-1 DC current gain IC=2.5A ; VCE=2V 10 hFE-2 DC current gain IC=1mA ; VCE=2V 10 fT Transition frequency IC=0.5A ; VCE=10V ton Turn-on time ts Storage time tf Fall time IC=2.5A;IB1=0.5A IB2=1A ,RL=60Ω VBB2=4V JMnic V 25 13 MHz 0.3 μs 1.3 μs 0.1 μs Product Specification www.jmnic.com 2SC4833 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) JMnic