SAVANTIC 2SC4940

SavantIC Semiconductor
Product Specification
2SC4940
Silicon NPN Power Transistors
DESCRIPTION
·With ITO-220 package
·Switching power transistor
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
550
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
4
A
ICM
Collector current-Peak
8
A
IB
Base current
2
A
IBM
Base current-peak
4
A
PT
Total power dissipation
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
MAX
UNIT
4.16
/W
SavantIC Semiconductor
Product Specification
2SC4940
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
At rated volatge
0.1
mA
0.1
mA
ICBO
CONDITIONS
MIN
MAX
550
UNIT
V
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
At rated volatge
hFE-1
DC current gain
IC=2A ; VCE=5V
10
hFE-2
DC current gain
IC=1mA ; VCE=5V
10
Transition frequency
IC=0.4A ; VCE=10V
fT
TYP.
10
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A;IB1=0.4A
IB2=0.8A ,RL=75C
VBB2=4V
2
0.8
µs
3.0
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
2SC4940