Diodes SMD Type Sillicon Epitaxial Schottky Barrier Diode 1SS350 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High breakdown voltage (VR=55V). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Very small-sized package permitting the 1SS350-applied sets to be made small and slim. 0.55 Low forward voltage (VF=0.23V max). +0.1 1.3-0.1 +0.1 2.4-0.1 Small interterminal capacitance (C=0.69pF typ). 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e r s e V o lt a g e VR 5 V F o rw a rd C u rre n t IF 30 mA J u n c t io n T e m p e r a t u r e Tj 125 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Param eter Forward Voltage Sym bol Conditions VF IF = 1 m A Forward Current IF V F = 0.5 V Reverse Current IR V R = 0.5 V Interterm inal Capacitance C V R = 0.2 V, f = 1 MHz Min Typ Max Unit 0.23 V 30 mA 0.69 25 A 0.9 pF Marking Marking BH www.kexin.com.cn 1