Diodes SMD Type Sillicon Epitaxial Schottky Barrier Diode 1SS351 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small interterminal capacitance (C=0.69pF typ). 1 0.55 high-density mounting and permits 1SS351-applied equipment to be made smaller. +0.1 1.3-0.1 +0.1 2.4-0.1 Series connection of 2 elements in a small-sized package facilitates 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small forward voltage (VF=0.23V max). 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol V alue U nit R everse V oltage VR 5 V F orward C urrent IF 30 mA Junction T em perature Tj 125 S torage tem perature T stg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Forward Voltage VF I F = 1 mA Forward Current IF V F = 0.5 V Reverse Current IR V R = 0.5 V Interterminal Capacitance C V R = 0.2 V, f = 1 MHz Min Typ Max 0.23 30 Unit V mA 0.69 25 A 0.9 pF Marking Marking CH www.kexin.com.cn 1