Diodes SMD Type Silicon Epitaxial Planar Diode 1SV217 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C2512V=10.5(Typ.) +0.1 2.6-0.1 1.0max Excellent C-V Characteristics,and Small Tracking Error. 0.375 0.475 +0.05 0.1-0.02 Useful for Small Size Tuner. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value VR 30 Reverse Voltage Unit V Peak Reverse Voltage V RM Junction Tem perature Tj 125 T stg -55 to +125 Storage Tem perature Range 35 (R L =10K ) V Electrical C haracteristics T a = 25 C onditions M in R everse V oltage P aram eter S ym bol VR IR = 1 30 R everse C urrent IR V R = 28 V C apacitance A Typ M ax V 10 C 2V f = 1 M H z;V R = 2 V 33 36 39 C 25V f = 1 M H z;V R = 25 V 2.6 2.88 3.2 11.5 12.5 C apacitance R atio C 2V /C 25V S eries R esistance rs V R = 5V , f = 470 M H z U nit 0.83 nA pF 1.0 N ote : A vailable in m atched group for capacitance to 2.5% . C (M ax.)-C (M in.) 0.025 C (M in.) (V R =2~25V ) Marking Marking T6 www.kexin.com.cn 1