Diodes SMD Type Silicon Epitaxial Planar Diode 1SV262 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C2V/C25V = 8(Typ.) Low Series Resistance:rs = 0.6 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02 Excellent C-V Characteristics,and Small Tracking Error. Absolute Maximum Ratings Ta = 25 Parameter Reverse Voltage Peak Reverse Voltage Symbol Value Unit VR 34 V V RM Junction Temperature Storage Temperature Range 36(R L = 10 K ) Tj 125 T stg -55 to +125 V Electrical C haracteristics T a = 25 P aram eter S ym bol R everse V oltage VR R everse C urrent C apacitance C apacitance R atio S eries R esistance C onditions M in IR = 1 34 A Typ M ax V IR V R = 32 V C 2V f = 1 M H z;V R = 2 V 33 35.5 38 C 25V f = 1 M H z;V R = 25 V 2.6 2.85 3.0 C 2V /C 25V 12 12.5 C 25V /C 28V 1.03 rs V R = 5V , f = 470 M H z U nit 10 0.6 nA pF 0.8 N ote : A vailable in m atched group for capacitance to 2.0% . C (M ax.)-C (M in.) 0.020 C (M in.) (V R =2~25V ) Marking Marking TD www.kexin.com.cn 1