KEXIN 1SV262

Diodes
SMD Type
Silicon Epitaxial Planar Diode
1SV262
SOD-323
+0.05
0.85-0.05
+0.1
1.3-0.1
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
Features
High Capacitance Ratio:C2V/C25V = 8(Typ.)
Low Series Resistance:rs = 0.6
+0.1
2.6-0.1
1.0max
(Typ.)
0.475
0.375
+0.05
0.1-0.02
Excellent C-V Characteristics,and Small Tracking Error.
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Peak Reverse Voltage
Symbol
Value
Unit
VR
34
V
V RM
Junction Temperature
Storage Temperature Range
36(R L = 10 K
)
Tj
125
T stg
-55 to +125
V
Electrical C haracteristics T a = 25
P aram eter
S ym bol
R everse V oltage
VR
R everse C urrent
C apacitance
C apacitance R atio
S eries R esistance
C onditions
M in
IR = 1
34
A
Typ
M ax
V
IR
V R = 32 V
C 2V
f = 1 M H z;V R = 2 V
33
35.5
38
C 25V
f = 1 M H z;V R = 25 V
2.6
2.85
3.0
C 2V /C 25V
12
12.5
C 25V /C 28V
1.03
rs
V R = 5V , f = 470 M H z
U nit
10
0.6
nA
pF
0.8
N ote :
A vailable in m atched group for capacitance to 2.0% .
C (M ax.)-C (M in.)
0.020
C (M in.)
(V R =2~25V )
Marking
Marking
TD
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