Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVU133 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low capacitance.(C=1.0pF max) +0.1 2.6-0.1 Low forward resistance. (rf=0.7 1.0max max) 0.375 +0.05 0.1-0.02 0.475 A bsolute M axim um R atings T a = 25 S ym bol V alue U nit R everse voltage P aram eter VR 30 V mW P ow er dissipation Pd 150 Junction tem perature Tj 125 S torage tem perature T stg -55 to +125 Electrical Characteristics Ta = 25 Conditions Min Reverse voltage Param eter Sym bol VR IR = 1 30 Reverse current IR V R = 25 V 100 nA V Forward voltage Capacitance Forward resistance A Typ Max Unit V VF IF = 2 m A 0.85 C1 V R = 1 V, f = 1 MHz 1.0 C6 V R = 6 V, f = 1 MHz 0.9 rf I F = 2 m A, f = 100 MHz 0.55 pF 0.7 Marking Marking P3 www.kexin.com.cn 1