Diodes SMD Type Silicon Switching Diode BAR99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For high-speed switching +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter R everse voltage P eak reverse volatge F orw ard current S urege forw ard current, T = 1 s T otal pow er dissipation, T s = 54 Junction tem perature S torage tem perature range S ym bol V alue U nit VR 70 V V RM 70 V IF 250 mA IF S 4.5 A P to t 370 mW Tj 150 T stg -65 to +150 Junction am bient (N ote 1) R th JA 330 K /W Junction soldering point R th JS 260 K /W N ote 1. P ackage m ounted on epoxy pcb 40 m m 40 m m 1.5 m m /6 cm 2 C u. www.kexin.com.cn 1 Diodes SMD Type Silicon Switching Diode BAR99 Electrical Characteristics Ta = 25 Parameter Symbol Breakdown voltage VR Conditions Min IR =100 70 A IF = 1 mA Forward voltage VF Reverse current IR Diode capacitance CD Reverse recovery time trr 2 JGs www.kexin.com.cn V 855 1000 IF = 150 mA 1250 V R = 70 V 2.5 V R = 25 V,T A = 150 V R = 0 V,f = 1 MHz IF = IR = 10 mA,R L = 100 Unit 715 IF = 50 mA measured at IR = 1 mA Marking Max IF = 10 mA V R = 70 V,T A = 150 Marking Typ 30 mV A 50 1.5 pF 6 ns