LIGITEK LA112B-1-GH

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
LA112B-1/GH
DATA SHEET
DOC. NO :
QW0905-LA112B-1/GH
REV.
:
A
DATE
:
08 - Apr - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA112B-1/GH
Page 1/5
Package Dimensions
2.5 ±0.5
4.3
G
8.2
3.0
5.0
9.6
H
2.5
□0.5
3.2 ±0.5
TYP
4.45±0.5
2.54TYP
1
6.99±0.5
2
LG2340-1
LH2340-1
3.0
5.0
1.5MAX
25.0MIN
□0.5
TYP
1.0MIN
2.54TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without not
ice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/5
PART NO. LA112B-1/GH
Absolute Maximum Ratings at Ta=25 ℃
Absolute Maximum Ratings
Symbol
Parameter
UNIT
G
H
Forward Current
IF
30
15
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
120
60
mA
Power Dissipation
PD
100
40
mW
Reverse Current @5V
Ir
10
10
μA
Operating Temperature
Topr
-40° ~ +85°
℃
Storage Temperature
Tstg
-40° ~ +100°
℃
Soldering Temperature
Tsol
Max 260℃ for 5 sec Max
(2mm from body)
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
Forward
Peak Spectral
voltage
wave halfwidth
length △λ nm @20mA(V)
λPnm
Luminous
intensity
Viewing
angle
@10mA(mcd) 2θ 1/2
(deg)
Min. Max. Min. Typ.
Lens
GaP
Green
Green Diffused
565
30
1.7
2.6
8.0
20
80
GaP
Red
Red Diffused
697
90
1.7
2.6
1.8
3.0
80
LA112B-1/GH
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/5
PART NO. LA112B-1/GH
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.2 Relative Intensity vs. Forward Current
Fig.1 Forward current vs. Forward Voltage
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.0
1.0
3.0
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
1.2
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
500
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
1000
Forward Current(mA)
Forward Voltage(V)
Relative Intensity@20mA
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/5
PART NO. LA112B-1/GH
Typical Electro-Optical Characteristics Curve
H CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
700
800
900
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
600
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
1000
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA112B-1/GH
Page 5/5
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃± 5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃± 5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃± 5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃ &-40 ℃± 5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11