LIGITEK LA73B-1-A.X.G-3

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
LA73B-1/A.X.G-3
DATA SHEET
DOC. NO :
QW0905-LA 73B-1/A.X.G-3
REV.
:
B
DATE
:
07 - Sep - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA73B-1/A.X.G-3
Page 1/5
Package Dimensions
2.4±0.5
4.4
A
11.6
2.9
X
15.3
5.08
G
2.5
3.0± 0.5
□0.5
TYP
4.65±0.5
2.54TYP
7.1±0.5
9.65 ±0.5
+ -
LA2641-1
LG2641-1
2.9
3.3
3.1
4.3
1.5MAX
A
G
25.0MIN
+
-
□0.5
TYP
+
1.0MIN
2.54TYP
+
-
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
-
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/5
PART NO. LA73B-1/A.X.G-3
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
A
G
Forward Current
IF
20
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
80
120
mA
Power Dissipation
PD
60
100
mW
Reverse Current @5V
Ir
10
μA
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +100
℃
Soldering Temperature
Tsol
Max 260 ℃ for 5 sec Max
(2mm from body)
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
Peak Dominant Spectral Forward Luminous Viewing
intensity
angle
wave
wave halfwidth voltage
20
@
mA(V)
@10mA(mcd)
length
length
θ 1/2
2
△λ nm
(deg)
λPnm λDnm
Min. Max. Min. Typ.
Lens
GaAsP/GaP Yellow Orange Transparent
---
592
35
1.7
2.6
12
30
40
565
---
30
1.7
2.6
12
30
40
LA73B-1/A.X.G-3
GaP
Green Green Transparent
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/5
PART NO. LA73B-1/A.X.G-3
Typical Electro-Optical Characteristics Curve
Y CHIP 封橙膠
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
Fig.3 Forward Voltage vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25 ℃
1.2
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
500
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
700
80
100
LIGITEK ELECTRONICS CO.,LTD.
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Page 4/5
PART NO. LA73B-1/A.X.G-3
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2.0
1.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA73B-1/A.X.G-3
Page 5/5
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11