LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGHT BAR LED DISPLAY Pb Lead-Free Parts LBD511SGM-XX-PF DATA SHEET DOC. NO : QW0905- LBD511SGM-XX-PF REV. : A DATE : 15 - Aug. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LBD511SGM-XX-PF Package Dimensions 15.0 PIN 1 15.0 5.08 (0.2") 13.5 2 LBD511SGM-XX-PF LIGITEK 11.2 Ø0.51 TYP 7.0±0.5 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO.LBD511SGM-XX-PF Internal Circuit Diagram LBD511SGM-XX-PF 2 1 1.CATHODE 2.ANODE Electrical Connection PIN NO.1 LBD511SGM-XX-PF 1 Cathode 2 Anode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO.LBD511SGM-XX-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SGM Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 100 mW Ir 50 μA Reverse Current Per Any Chip Electrostatic Discharge( * ) ESD 1000 V Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) Electrical Material common λP λD △λ Vf(v) Iv(mcd) IV-M cathode (nm) (nm) (nm) Typ. Max. Min. Typ. Emitted or anode InGaN/SiC Green CHIP PART NO LBD511SGM-XX-PF Common Cathode 518 525 35 3.5 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 4.2 68 91 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO.LBD511SGM-XX-PF Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=20mA Peak Wavelength λP nm If=20mA Dominant Wavelength λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO.LBD511SGM-XX-PF Typical Electro-Optical Characteristics Curve SGM CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Forward Current vs. Relative Intensity 2.5 Forward Current(mA) Forward Current(mA) 30 20 10 1.5 2.0 3.0 2.5 3.5 1.5 1.0 0.5 0.0 0 0 1.0 2.0 4.0 10 60 50 40 30 20 10 0 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 500 550 Wavelength (nm) 50 2.0 1.5 1.0 0.5 0.0 20 30 40 50 Ambient Temperature( ℃) Ambient Temperature( ℃) 0.0 450 40 Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Current@20mA Fig.3 Forward Current vs. Temperature 20 30 Relative Intensity Normalize @20mA Forward Voltage(V) 0 20 600 60 70 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LBD511SGM-XX-PF Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C Temp(°C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD511SGM-XX-PF Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11