LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGHT BAR LED DISPLAY Pb Lead-Free Parts LBD801/29-XX DATA SHEET DOC. NO : QW0905- LBD801/29-XX REV. : A DATE : 22 - Jul - 2009 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD801/29-XX Page 1/7 32.00(1.259") 22.00(0.866") 6.20(0.244") 4-1.2 11.00(0.433") Package Dimensions 7.00(0.276") 7.0(0.276") LBD801/29-XX LIGITEK 0.45TYP 5.08 5.08 1 2 3 PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD801/29-XX Page 2/7 Internal Circuit Diagram LBD8019-XX 1 LBD8029-XX 1 3 3 2 2 Electrical Connection PIN NO. LBD8019-XX PIN NO. LBD8029-XX 1 Anode 1 Cathode 2 Cathode 2 Anode 3 Anode 3 Cathode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD801/29-XX Page 3/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT 9SEF Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 60 mA Power Dissipation Per Chip PD 75 mW Ir 10 μA Electrostatic Discharge( * ) ESD 2000 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO λD (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LBD8019-XX AlGaInP Orange LBD8029-XX Electrical 605 17 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 50 68 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LBD801/29-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD801/29-XX Page5/7 Typical Electro-Optical Characteristics Curve 9SEF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD801/29-XX Page 6/7 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350 °C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ° C 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260°C Temp(°C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LBD801/29-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11