LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY (0.39 Inch) LFD415/62-XX/T DATA SHEET DOC. NO : QW0905- LFD415/62-XX/T REV. : D DATE : 20 - Jan. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LFD415/62-XX/T Package Dimensions 7.0 (0.276") 40.18(1.582") DP1 10.0 (0.39") DIG.1 DIG.2 DIG.3 DP2 DP3 DIG.4 12.8 (0.504") 10.16 (0.4") 0.3 TYP LFD415/62-XX/T LIGITEK A F 3.0 ~ 3.5 0.5 TYP G E B C D 2.54X7=17.78 (0.7") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. DP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD415/62-XX/T Page 2/7 Internal Circuit Diagram LFD4162-XX/T LFD4152-XX/T 14 16 13 3 5 11 15 7 A B DIG. C D 1 E F G DP A B DIG. C D 2 E F G DP DP1 DP2 A B DIG. C D 6 E F G DP DP3 DP2 A B DIG. C D 6 E F G DP 3 9 4 1 2 4 12 10 A B DIG. C D 8 E F G DP A B DIG. C D 1 E F G DP A B DIG. C D 2 E F G DP DP1 2 4 12 9 1 14 16 13 3 5 11 15 7 DP3 3 10 A B DIG. C D 8 E F G DP 4 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD415/62-XX/T Page 3/7 Electrical Connection PIN NO. LFD4152-XX/T PIN NO. LFD4162-XX/T 1 Common Cathode Dig.1 1 Common Anode Dig.1 2 Common Cathode Dig.2 2 Common Anode Dig.2 3 Anode D 3 Cathode D 4 Cathode DP1,DP2 4 Anode DP1,DP2 5 Anode E 5 Cathode E 6 Common Cathode Dig.3 6 Common Anode Dig.3 7 Anode DP 7 Cathode DP 8 Common Cathode Dig.4 8 Common Anode Dig.4 9 Anode DP3 9 Cathode DP3 10 Cathode DP3 10 Anode DP3 11 Anode F 11 Cathode F 12 Anode DP1,DP2 12 Cathode DP1,DP2 13 Anode C 13 Cathode C 14 Anode A 14 Cathode A 15 Anode G 15 Cathode G 16 Anode B 16 Cathode B P LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD415/62-XX/T Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) Common Cathode Material Emitted or Anode CHIP PART NO Electrical Iv(mcd) Vf(v) △λ (nm) IV-M Min. Typ. Max. Min. Typ. Common Cathode LFD4152-XX/T GaP LFD4162-XX/T λP (nm) 565 Green 30 1.7 2.1 2.6 0.35 0.5 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LFD415/62-XX/T Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=2mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LFD415/62-XX/T Typical Electro-Optical Characteristics Curve G CHIP Fig.2 Relative Intensity vs. Forward Current Fig.1 Forward current vs. Forward Voltage 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 Fig.6 Directive Radiation 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LFD415/62-XX/T Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11