LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SQUARE WITH 4LEADS TYPE LED LAMPS Pb Lead-Free Parts LHIR9653-00 DATA SHEET DOC. NO : QW0905- LHIR9653-00 REV. : A DATE : 08 - Sep. - 2009 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LHIR9653-00 Package Dimensions CATHODE 7.62±0.5 ANODE 7.62±0.5 2.5±0.5 0.4 4.7±0.5 1.55 0.5 3.5±0.5 5.08 5.08± 0.3 Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Features: 1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation. Descriptions: The LHIR9653-00series are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in water clear plastic T-1 3/4 package individually Device Selection Guide: PART NO MATERIAL LENS COLOR LHIR9653-00 GaAIAs/GaAs Water Clear LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/5 PART NO. LHIR9653-00 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol UNIT HIR Forward Current IF 50 mA Peak Forward Current (300PPS,10 μs Pulse) IFP 1 A Power Dissipation PD 100 mW Reverse Voltage Vr 5 V Electrostatic Discharge ESD 2000 V Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +85 ℃ Electrical Optical Characteristics (Aa=25℃) SYMBOL Min. Typ. Radiant Intensity Le 1.0 1.8 Aperture Radiant Incidence Ee Peak Emission Wavelength λpeak PARAMETER Max. UNIT TEST CONDITION mW/sr IF=20mA 2 0.143 0.257 mW/cm IF=20mA 850 nm IF=20mA △λ 50 nm IF=20mA Forward Voltage VF 1.2 1.6 V IF=20mA Reverse Current IR 100 μA VR=5V Spectral Line Half Width Viewing Angle 2θ1/2 130 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The radiant intensity data did not including ± 15% testing tolerance. deg LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LHIR9653-00 Page3/5 Typical Electro-Optical Characteristics Curve HIR CHIP Fig.1 Forward Current vs. Rorward Voltage Fig.2 Relative Radiant Power vs. Wavelength 1.0 Relative Radiant Power Normalize @20mA Forward Current[mA] 1000 100 10 1 0.1 0.0 1.0 2.0 3.0 4.0 0.5 0.0 800 850 Wavelength[nm] Forward Voltage[V] Fig.4 Relative Radiant Power vs. Forward Peak Current Fig.3 Relative Radiant Power vs. Forward DC Current 10.0 Relative Radiant Power Normalize @100 mA Relative Radiant Power Normalize @20mA 10.0 1.0 0.1 1 10 1.0 0.1 10 100 100 Fig.6 Relative Radiant Power vs. Temperature Fig.5 Forward DC Voltage vs. Temperature 1.1 1.0 0.9 -20 0 20 40 60 80 Ambient Temperature [℃] 100 Relative Radiant Power Normalize @ 20mA, 25 ℃ 1.2 0.8 -40 1000 IFPK [mA] IFDC[mA] Forward DC Voltage Normalize @20mA, 25 ℃ 950 900 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature[ ℃] 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LHIR9653-00 Page 4/5 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 50 100 60 Seconds Max Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LHIR9653-00 Page 5/5 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11