LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOT MATRIX DIGIT LED DISPLAY (0.68Inch) LMD5701/2AE-XX DATA SHEET DOC. NO : QW0905- LMD5701/2AE-XX REV. : A DATE : 08 - Feb. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LMD5701/2AE-XX Package Dimensions 12.7 (0.5") 6.1 (0.24") PIN NO.1 15.24 (0.6") 17.8 (0.7") LMD5701/2AE-XX LIGITEK ψ2.0(0.079")X35 10.16 (0.4") Ø 0.51 TYP 6.9±0.5 7.62 (0.3") Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 2.54X5= 12.7 (0.5") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LMD5701/2AE-XX Internal Circuit Diagram LMD5701AE-XX COLUMN ROW PIN 1 12 2 11 3 2 4 9 5 4 6 5 7 6 1 2 3 4 5 1 3 10 7 8 LMD5702AE-XX COLUMN ROW PIN 1 12 2 11 3 2 4 9 5 4 6 5 7 6 1 2 3 4 5 1 3 10 7 8 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LMD5701/2AE-XX Page 3/7 Electrical Connection PIN NO. LMD5701AE-XX PIN NO. LMD5702AE-XX 1 Cathode Column 1 1 Anode Column 1 2 Anode Row 3 2 Cathode Row 3 3 Cathode Column 2 3 Anode Column 2 4 Anode Row 5 4 Cathode Row 5 5 Anode Row 6 5 Cathode Row 6 6 Anode Row 7 6 Cathode Row 7 7 Cathode Column 4 7 Anode Column 4 8 Cathode Column 5 8 Anode Column 5 9 Anode Row 4 9 Cathode Row 4 10 Cathode Column 3 10 Anode Column 3 11 Anode Row 2 11 Cathode Row 2 12 Anode Row 1 12 Cathode Row 1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LMD5701/2AE-XX Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT E Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260℃ Part Selection And Application Information(Ratings at 25℃) common λP △λ cathode (nm) (nm) Material Emitted or anode Electrical CHIP PART NO Min. IV-M Typ. Max. Min. Typ. Common Cathode LMD5701AE-XX GaAsP/GaP Orange LMD5702AE-XX Iv(mcd) Vf(v) 635 45 1.7 2.1 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 2.35 4.0 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO.LMD5701/2AE-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page6/7 PART NO.LMD5701/2AE-XX Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 2.0 1.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 1.2 3.0 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 700 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LMD5701/2AE-XX Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃± 5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃± 5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃± 5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5℃ &-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11