LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only TRIPLE COLOR LED LAMPS Pb Lead-Free Parts LRGB3392-C1 DATA SHEET DOC. NO : QW0905- LRGB3392-C1 REV. : A DATE : 16 - Oct.- 2008 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LRGB3392-C1 Package Dimensions 5.0 5.9 7.6 8.6 13.6±0.5 1.5MAX 0.4 0.1 25.0MIN 0.5 TYP 1 23 4 1.ANODE GREEN 2.ANOED BLUE 3.COMMON CATHODE 4.ANODE RED 1.0MIN 1.0MIN 4-1.27TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LRGB3392-C1 Absolute Maximum Ratings at Ta=25 ℃ Absolute Maximum Ratings Symbol Parameter UNIT URF DGM DBK Forward Current IF 50 30 30 mA Peak Forward Current Duty 1/10@10KHz IFP 130 100 100 mA Power Dissipation PD 120 120 120 mW Reverse Current @5V Ir 10 50 50 μA Electrostatic Discharge ESD 2000 1000 1000 V Operating Temperature Topr -20 ~ +80 ℃ Storage Temperature Tstg -30 ~ +100 ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted AlGaInP LRGB3392-C1 InGaN/GaN Green White Diffused Forward voltage @20mA(V) Luminous Viewing intensity angle @20mA(mcd) 2 θ 1/2 (deg) Min. Typ. Max. Min. Typ. Lens Red InGaN/GaN Blue Peak Dominant Spectral wave halfwidth wave length △λnm length λPnm λDnm ---- 630 20 1.5 ---- 2.4 450 700 40 518 525 36 ---- 3.5 4.0 900 1500 50 ---- 470 30 ---- 3.5 4.0 450 700 50 Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LRGB3392-C1 Typical Electro-Optical Characteristics Curve URF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1.0 1.5 2.0 2.5 1.0 3.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize@25 ℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 -0 20 40 60 80 2.5 2.0 1.5 1.0 0.5 0 100 -40 -20 -0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 100 Fig.6 Directive Radiation 1.0 0° -30 ° 30° 0.5 -60 ° 60° 0 550 600 650 Wavelength (nm) 700 100% 75% 50% 25% 0 25% 50% 75% 100% 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LRGB3392-C1 Typical Electro-Optical Characteristics Curve DGM CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1000 Forward Current(mA) Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 1.2 3.0 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Fig.6 Directive Radiation Relative Intensity@20mA 1.0 0° -30 ° 30° 0.5 -60 ° 60 ° 0.0 450 500 550 Wavelength (nm) 600 100% 75% 50% 25% 0 25% 50% 75% 100% 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LRGB3392-C1 Typical Electro-Optical Characteristics Curve DBK CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1 01 2.5 2.0 1.5 1.0 0.5 0.0 2.0 1.0 3.0 4.0 1 5.0 10 1.2 Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1000 Forward Current(mA) Forward Voltage(V) -40 100 Fig.6 Directive Radiation 1.0 0° -30° 0.5 30° -60 ° 0.0 400 450 Wavelength (nm) 100% 75% 50% 60 ° 25% 0 25% 50% 75% 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LRGB3392-C1 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2°C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LRGB3392-C1 Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11