LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.39 Inch) Pb Lead-Free Parts LSD3E65-XX-PF DATA SHEET DOC. NO : REV. : DATE : QW0905- LSD3E65-XX-PF A 27 - Jun. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3E65-XX-PF Page 1/8 Package Dimensions 9.9 (0.39") LSD3E65-XX-PF LIGITEK 16 14 1 PIN NO.1 7.0 (0.276") 13 A F H JK B 14.0 (0.551") 10.0 (0.39") G1 G2 9.76 11.0 5.08 (0.2") (0.384") (0.433") ENM L C D 5 6 9 8 ψ1.2(0.047") 3.5±0.5 Ø 0.45 TYP 2.35X2=4.7 (0.185") 7.5(0.295") Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3E65-XX-PF Page 2/8 Internal Circuit Diagram LSD3E65-XX-PF 1 A B C D E F G1G2 H J K L M N DP 16 13 10 8 7 3 4 12 2 15 14 11 5 6 9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3E65-XX-PF Page 3/8 Electrical Connection PIN NO. LSD3E65-XX-PF 1 Common Anode 9 2 Cathode H 10 Cathode C 3 Cathode F 11 Cathode L 4 Cathode G1 12 Cathode G2 5 Cathode M 13 Cathode B 6 Cathode N 14 Cathode K 7 Cathode E 15 Cathode J 8 Cathode D 16 Cathode A Cathode DP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/8 PART NO. LSD3E65-XX-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SR Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO LSD3E65-XX-PF GaAlAs Red Common Anode Electrical λP (nm) 660 △λ Vf(v) (nm) 20 Iv(mcd) Min. Typ. Max. Min. Typ. 1.5 1.8 5.0 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.4 3.05 IV-M 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3E65-XX-PF Page 5/8 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3E65-XX-PF Page 6/8 Typical Electro-Optical Characteristics Curve SR CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature(℃) Ambient Temperature(℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/8 PART NO. LSD3E65-XX-PF Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ° C 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ° C Temp(° C) 260° C3sec Max 260° 5°/sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 8/8 PART NO. LSD3E65-XX-PF Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃± 5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃± 5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃± 5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5℃ &-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11